Inventor · disambiguated record
Kangguo Cheng
Also filed as: CHENG KANGGUO · CHENG KANGGUO CHENG
2,835 granted patents·241 pending applications·18,399 citations·filing 2003–2025
99Inventor score
Top patents by PatentIndex Score
3,076 records- 0199US11581190B2Method of fabricating semiconductor fins by differentially oxidizing mandrel sidewallsTESSERA LLC·Filed 2020·Granted Feb 14, 2023·4 cites·20 claims
- 0299US11049953B2Nanosheet transistorTESSERA INC·Filed 2020·Granted Jun 29, 2021·6 cites·21 claims
- 0399US10741456B2Vertically stacked nanosheet CMOS transistorIBM·Filed 2018·Granted Aug 11, 2020·27 cites·15 claims
- 0499US10418277B2Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2018·Granted Sep 17, 2019·159 cites·20 claims
- 0599US10388732B1Nanosheet field-effect transistors including a two-dimensional semiconducting materialGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·88 cites·20 claims
- 0699US10263100B1Buffer regions for blocking unwanted diffusion in nanosheet transistorsIBM·Filed 2018·Granted Apr 16, 2019·145 cites·20 claims
- 0799US10229985B1Vertical field-effect transistor with uniform bottom spacerIBM·Filed 2017·Granted Mar 12, 2019·284 cites·20 claims
- 0899US9984937B1Vertical silicon/silicon-germanium transistors with multiple threshold voltagesIBM·Filed 2017·Granted May 29, 2018·26 cites·15 claims
- 0999US9923055B1Inner spacer for nanosheet transistorsIBM·Filed 2016·Granted Mar 20, 2018·49 cites·19 claims
- 1099US9899515B1Fabrication of a pair of vertical fin field effect transistors having a merged top source/drainIBM·Filed 2016·Granted Feb 20, 2018·46 cites·13 claims
- 1199US9892961B1Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2016·Granted Feb 13, 2018·49 cites·13 claims
- 1299US9881998B1Stacked nanosheet field effect transistor device with substrate isolationIBM·Filed 2017·Granted Jan 30, 2018·70 cites·13 claims
- 1399US9859409B2Single-electron transistor with wrap-around gateIBM·Filed 2016·Granted Jan 2, 2018·28 cites·17 claims
- 1499US9859166B1Vertical field effect transistor having U-shaped top spacerIBM·Filed 2017·Granted Jan 2, 2018·52 cites·20 claims
- 1599US9853028B1Vertical FET with reduced parasitic capacitanceIBM·Filed 2017·Granted Dec 26, 2017·33 cites·20 claims
- 1699US9842835B1High density nanosheet diodesIBM·Filed 2016·Granted Dec 12, 2017·315 cites·9 claims
- 1799US9837405B1Fabrication of a vertical fin field effect transistor having a consistent channel widthIBM·Filed 2016·Granted Dec 5, 2017·45 cites·5 claims
- 1899US9837414B1Stacked complementary FETs featuring vertically stacked horizontal nanowiresIBM·Filed 2016·Granted Dec 5, 2017·173 cites·20 claims
- 1999US9799570B1Fabrication of vertical field effect transistors with uniform structural profilesIBM·Filed 2017·Granted Oct 24, 2017·56 cites·9 claims
- 2099US9773913B1Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistanceIBM·Filed 2016·Granted Sep 26, 2017·87 cites·20 claims
- 2199US9768072B1Fabrication of a vertical fin field effect transistor with reduced dimensional variationsIBM·Filed 2016·Granted Sep 19, 2017·30 cites·14 claims
- 2299US9755073B1Fabrication of vertical field effect transistor structure with strained channelsIBM·Filed 2016·Granted Sep 5, 2017·49 cites·18 claims
- 2399US9741716B1Forming vertical and horizontal field effect transistors on the same substrateIBM·Filed 2016·Granted Aug 22, 2017·43 cites·17 claims
- 2499US9735253B1Closely packed vertical transistors with reduced contact resistanceIBM·Filed 2016·Granted Aug 15, 2017·48 cites·15 claims
- 2599US9721897B1Transistor with air spacer and self-aligned contactIBM·Filed 2016·Granted Aug 1, 2017·52 cites·12 claims
- 2699US9716170B1Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drainIBM·Filed 2016·Granted Jul 25, 2017·46 cites·11 claims
- 2799US9716158B1Air gap spacer between contact and gate regionIBM·Filed 2016·Granted Jul 25, 2017·111 cites·19 claims
- 2899US9711618B1Fabrication of vertical field effect transistor structure with controlled gate lengthIBM·Filed 2016·Granted Jul 18, 2017·43 cites·13 claims
- 2999US9704863B1Forming a hybrid channel nanosheet semiconductor structureIBM·Filed 2016·Granted Jul 11, 2017·43 cites·20 claims
- 3099US9666533B1Airgap formation between source/drain contacts and gatesIBM·Filed 2016·Granted May 30, 2017·54 cites·20 claims
- 3199US9659963B2Contact formation to 3D monolithic stacked FinFETsIBM·Filed 2015·Granted May 23, 2017·79 cites·20 claims
- 3299US9653289B1Fabrication of nano-sheet transistors with different threshold voltagesIBM·Filed 2016·Granted May 16, 2017·148 cites·14 claims
- 3399US9647123B1Self-aligned sigma extension regions for vertical transistorsIBM·Filed 2016·Granted May 9, 2017·43 cites·20 claims
- 3499US9647112B1Fabrication of strained vertical P-type field effect transistors by bottom condensationIBM·Filed 2016·Granted May 9, 2017·47 cites·20 claims
- 3599US9627511B1Vertical transistor having uniform bottom spacersIBM·Filed 2016·Granted Apr 18, 2017·52 cites·20 claims
- 3699US9620590B1Nanosheet channel-to-source and drain isolationIBM·Filed 2016·Granted Apr 11, 2017·105 cites·13 claims
- 3799US9608065B1Air gap spacer for metal gatesIBM·Filed 2016·Granted Mar 28, 2017·141 cites·20 claims
- 3899US9570551B1Replacement III-V or germanium nanowires by unilateral confined epitaxial growthIBM·Filed 2016·Granted Feb 14, 2017·87 cites·10 claims
- 3999US9536982B1Etch stop for airgap protectionIBM·Filed 2015·Granted Jan 3, 2017·60 cites·18 claims
- 4099US9525064B1Channel-last replacement metal-gate vertical field effect transistorIBM·Filed 2015·Granted Dec 20, 2016·62 cites·5 claims
- 4199US9466570B1MOSFET with asymmetric self-aligned contactIBM·Filed 2016·Granted Oct 11, 2016·36 cites·14 claims
- 4299US9455331B1Method and structure of forming controllable unmerged epitaxial materialIBM·Filed 2015·Granted Sep 27, 2016·66 cites·14 claims
- 4399US9443982B1Vertical transistor with air gap spacersIBM·Filed 2016·Granted Sep 13, 2016·93 cites·20 claims
- 4499US9425291B1Stacked nanosheets by aspect ratio trappingIBM·Filed 2015·Granted Aug 23, 2016·39 cites·9 claims
- 4599US9368572B1Vertical transistor with air-gap spacerIBM·Filed 2015·Granted Jun 14, 2016·177 cites·7 claims
- 4699US9362355B1Nanosheet MOSFET with full-height air-gap spacerIBM·Filed 2015·Granted Jun 7, 2016·198 cites·6 claims
- 4799US9356027B1Dual work function integration for stacked FinFETIBM·Filed 2015·Granted May 31, 2016·40 cites·9 claims
- 4899US9312383B1Self-aligned contacts for vertical field effect transistorsIBM·Filed 2015·Granted Apr 12, 2016·55 cites·20 claims
- 4999US8969934B1Gate-all-around nanowire MOSFET and method of formationIBM·Filed 2013·Granted Mar 3, 2015·326 cites·4 claims
- 5099US8796093B1Doping of FinFET structuresIBM·Filed 2013·Granted Aug 5, 2014·71 cites·22 claims
Showing the top 50 of 3,076 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →