Inventor · disambiguated record
Kazuhiko Kashima
Also filed as: KASHIMA KAZUHIKO
11 granted patents·11 pending applications·88 citations·filing 1987–2025
88Inventor score
Files withTOSHIBA CERAMICS CO9FURUKAWA ELECTRIC CO LTD3GLOBALWAFERS JAPAN CO LTD3SENDA TAKESHI3TOKYO ELECTRON LTD2
Top patents by PatentIndex Score
22 records- 0184US9541452B2Calibration curve formation method, impurity concentration measurement method, and semiconductor wafer manufacturing methodGLOBALWAFERS JAPAN CO LTD·Filed 2015·Granted Jan 10, 2017·7 cites·13 claims
- 0269US7977219B2Manufacturing method for silicon waferCOVALENT MATERIALS CORP·Filed 2009·Granted Jul 12, 2011·3 cites·5 claims
- 0368US2025334759A1Optical module and method of manufacturing optical moduleFURUKAWA ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 0467US5744401ASilicon wafer manufacturing method eliminating final mirror-polishing stepTOSHIBA CERAMICS CO·Filed 1996·Granted Apr 28, 1998·39 cites·7 claims
- 0563US8476149B2Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling processISOGAI HIROMICHI·Filed 2009·Granted Jul 2, 2013·3 cites·10 claims
- 0663US7048796B2Silicon single crystal wafer fabricating method and silicon single crystal waferTOSHIBA CERAMICS CO·Filed 2004·Granted May 23, 2006·5 cites·20 claims
- 0758US7193294B2Semiconductor substrate comprising a support substrate which comprises a gettering siteTOSHIBA CERAMICS CO·Filed 2004·Granted Mar 20, 2007·6 cites·20 claims
- 0855US4910156ANeutron transmutation doping of a silicon waferTOSHIBA CERAMICS CO·Filed 1987·Granted Mar 20, 1990·24 cites·2 claims
- 0954US2007227440A1Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereofTOSHIBA CERAMICS CO·Filed 2007·Application pending·0 cites
- 1050US2005215057A1Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereofTOSHIBA CERAMICS CO·Filed 2005·Application pending·0 cites
- 1148US7835604B2Fiber Bragg grating elementFURUKAWA ELECTRIC CO LTD·Filed 2006·Granted Nov 16, 2010·1 cites·10 claims
- 1247US2008277768A1Silicon member and method of manufacturing the sameTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 1344US2007068447A1Method of manufacturing silicon waferTOSHIBA CERAMICS CO·Filed 2006·Application pending·0 cites
- 1444US2007240628A1Silicon waferTOSHIBA CERAMICS CO·Filed 2007·Application pending·0 cites
- 1542US2006170078A1Silicon member and method of manufacturing the sameTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 1641US8252700B2Method of heat treating silicon waferSENDA TAKESHI·Filed 2010·Granted Aug 28, 2012·0 cites·8 claims
- 1741US2008212925A1Fiber bragg grating and manufacturing method thereforFURUKAWA ELECTRIC CO LTD·Filed 2007·Application pending·0 cites
- 1839US8999864B2Silicon wafer and method for heat-treating silicon waferSENDA TAKESHI·Filed 2010·Granted Apr 7, 2015·0 cites·4 claims
- 1939US2013175726A1Method for manufacturing silicon waferGLOBALWAFERS JAPAN CO LTD·Filed 2013·Application pending·0 cites
- 2039US2003029375A1Silicon single crystal wafer fabricating method and silicon single crystal waferTOSHIBA CERAMICS CO·Filed 2002·Application pending·0 cites
- 2134US8399341B2Method for heat treating a silicon waferSENDA TAKESHI·Filed 2010·Granted Mar 19, 2013·0 cites·8 claims
- 2234US2015017086A1Silicon single crystal and method for manufacture thereofGLOBALWAFERS JAPAN CO LTD·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →