Inventor · disambiguated record
Karl B. Levy
Also filed as: LEVY KARL B
29 granted patents·2,606 citations·filing 1990–2011
98Inventor score
Top patents by PatentIndex Score
29 records- 0198US7691749B2Deposition of tungsten nitrideNOVELLUS SYSTEMS INC·Filed 2005·Granted Apr 6, 2010·97 cites·18 claims
- 0297US8367546B2Methods for forming all tungsten contacts and linesNOVELLUS SYSTEMS INC·Filed 2011·Granted Feb 5, 2013·42 cites·20 claims
- 0397US8053365B2Methods for forming all tungsten contacts and linesNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 8, 2011·66 cites·27 claims
- 0497US7772114B2Method for improving uniformity and adhesion of low resistivity tungsten filmNOVELLUS SYSTEMS INC·Filed 2007·Granted Aug 10, 2010·89 cites·15 claims
- 0597US7141494B2Method for reducing tungsten film roughness and improving step coverageNOVELLUS SYSTEMS INC·Filed 2003·Granted Nov 28, 2006·147 cites·32 claims
- 0697US7005372B2Deposition of tungsten nitrideNOVELLUS SYSTEMS INC·Filed 2003·Granted Feb 28, 2006·187 cites·46 claims
- 0797US6179973B1Apparatus and method for controlling plasma uniformity across a substrateNOVELLUS SYSTEMS INC·Filed 1999·Granted Jan 30, 2001·167 cites·20 claims
- 0896US6193854B1Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter sourceNOVELLUS SYSTEMS INC·Filed 1999·Granted Feb 27, 2001·145 cites·34 claims
- 0995US8329576B2Method for improving uniformity and adhesion of low resistivity tungsten filmCHAN LANA HIULUI·Filed 2010·Granted Dec 11, 2012·33 cites·21 claims
- 1095US7262125B2Method of forming low-resistivity tungsten interconnectsNOVELLUS SYSTEMS INC·Filed 2004·Granted Aug 28, 2007·91 cites·32 claims
- 1195US6497734B1Apparatus and method for enhanced degassing of semiconductor wafers for increased throughputNOVELLUS SYSTEMS INC·Filed 2002·Granted Dec 24, 2002·461 cites·28 claims
- 1294US6902620B1Atomic layer deposition systems and methodsNOVELLUS SYSTEMS INC·Filed 2001·Granted Jun 7, 2005·86 cites·29 claims
- 1394US6554914B1Passivation of copper in dual damascene metalizationNOVELLUS SYSTEMS INC·Filed 2001·Granted Apr 29, 2003·62 cites·27 claims
- 1494US5225024AMagnetically enhanced plasma reactor system for semiconductor processingAPPLIED MATERIALS INC·Filed 1991·Granted Jul 6, 1993·140 cites·9 claims
- 1593US6500321B1Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering targetNOVELLUS SYSTEMS INC·Filed 2000·Granted Dec 31, 2002·47 cites·30 claims
- 1692US5298465APlasma etching systemAPPLIED MATERIALS INC·Filed 1993·Granted Mar 29, 1994·76 cites·10 claims
- 1792US5126231AProcess for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etchAPPLIED MATERIALS INC·Filed 1990·Granted Jun 30, 1992·166 cites·21 claims
- 1890US6977014B1Architecture for high throughput semiconductor processing applicationsNOVELLUS SYSTEMS INC·Filed 2001·Granted Dec 20, 2005·46 cites·16 claims
- 1989US6497796B1Apparatus and method for controlling plasma uniformity across a substrateNOVELLUS SYSTEMS INC·Filed 2000·Granted Dec 24, 2002·34 cites·15 claims
- 2089US5465154AOptical monitoring of growth and etch rate of materialsFiled 1990·Granted Nov 7, 1995·66 cites·5 claims
- 2188US5942799AMultilayer diffusion barriersNOVELLUS SYSTEMS INC·Filed 1997·Granted Aug 24, 1999·99 cites·19 claims
- 2286US6444105B1Physical vapor deposition reactor including magnet to control flow of ionsNOVELLUS SYSTEMS INC·Filed 2000·Granted Sep 3, 2002·22 cites·23 claims
- 2382US5183775AMethod for forming capacitor in trench of semiconductor wafer by implantation of trench surfaces with oxygenAPPLIED MATERIALS INC·Filed 1990·Granted Feb 2, 1993·83 cites·12 claims
- 2478US8192131B1Architecture for high throughput semiconductor processing applicationsSTEVENS CRAIG L·Filed 2005·Granted Jun 5, 2012·7 cites·6 claims
- 2577US6534404B1Method of depositing diffusion barrier for copper interconnect in integrated circuitNOVELLUS SYSTEMS INC·Filed 1999·Granted Mar 18, 2003·50 cites·25 claims
- 2676US5976310APlasma etch systemAPPLIED MATERIALS INC·Filed 1997·Granted Nov 2, 1999·52 cites·4 claims
- 2775US6541371B1Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processingNOVELLUS SYSTEMS INC·Filed 2000·Granted Apr 1, 2003·17 cites·36 claims
- 2873US6905959B1Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processingNOVELLUS SYSTEMS INC·Filed 2002·Granted Jun 14, 2005·14 cites·5 claims
- 2945US5126008ACorrosion-free aluminum etching process for fabricating an integrated circuit structureAPPLIED MATERIALS INC·Filed 1991·Granted Jun 30, 1992·14 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →