Inventor · disambiguated record
Kisik Choi
Also filed as: CHOI KISIK
107 granted patents·96 pending applications·612 citations·filing 2005–2024
99Inventor score
Top patents by PatentIndex Score
203 records- 0198US9257348B2Methods of forming replacement gate structures for transistors and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 9, 2016·43 cites·27 claims
- 0298US9093467B1Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 28, 2015·68 cites·8 claims
- 0398US9012319B1Methods of forming gate structures with multiple work functions and the resulting productsGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 21, 2015·105 cites·19 claims
- 0497US8048791B2Method of forming a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2009·Granted Nov 1, 2011·122 cites·17 claims
- 0596US11309383B1Quad-layer high-k for metal-insulator-metal capacitorsIBM·Filed 2020·Granted Apr 19, 2022·4 cites·25 claims
- 0695US11894265B2Top via with damascene line and viaIBM·Filed 2021·Granted Feb 6, 2024·2 cites·19 claims
- 0795US8999831B2Method to improve reliability of replacement gate deviceIBM·Filed 2012·Granted Apr 7, 2015·11 cites·5 claims
- 0894US12444653B2Buried power rail at tight cell-to-cell spaceIBM·Filed 2021·Granted Oct 14, 2025·2 cites·14 claims
- 0994US11276639B2Conductive lines with subtractive cutsIBM·Filed 2020·Granted Mar 15, 2022·3 cites·18 claims
- 1094US11195795B1Well-controlled edge-to-edge spacing between adjacent interconnectsIBM·Filed 2020·Granted Dec 7, 2021·3 cites·20 claims
- 1194US10629499B2Method and structure for forming a vertical field-effect transistor using a replacement metal gate processIBM·Filed 2018·Granted Apr 21, 2020·8 cites·12 claims
- 1294US9287130B1Method for single fin cuts using selective ion implantsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·12 cites·23 claims
- 1394US8941184B2Low threshold voltage CMOS deviceANDO TAKASHI·Filed 2011·Granted Jan 27, 2015·14 cites·9 claims
- 1494US7332433B2Methods of modulating the work functions of film layersSEMATECH INC·Filed 2005·Granted Feb 19, 2008·31 cites·10 claims
- 1593US12268031B2Backside power rails and power distribution network for density scalingIBM·Filed 2021·Granted Apr 1, 2025·2 cites·12 claims
- 1693US10748812B1Air-gap containing metal interconnectsIBM·Filed 2019·Granted Aug 18, 2020·10 cites·8 claims
- 1793US9472643B2Method to improve reliability of replacement gate deviceIBM·Filed 2015·Granted Oct 18, 2016·6 cites·10 claims
- 1893US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 1992US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 2091US12396227B2Full wrap around backside contactIBM·Filed 2022·Granted Aug 19, 2025·1 cites·18 claims
- 2191US11315872B1Self-aligned top viaIBM·Filed 2020·Granted Apr 26, 2022·2 cites·14 claims
- 2291US9040404B2Replacement metal gate structure for CMOS deviceIBM·Filed 2012·Granted May 26, 2015·13 cites·5 claims
- 2390US8932923B2Semiconductor gate structure for threshold voltage modulation and method of making sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 13, 2015·11 cites·15 claims
- 2490US8552505B1Integrated circuits having improved metal gate structures and methods for fabricating sameKIM HOON·Filed 2012·Granted Oct 8, 2013·12 cites·20 claims
- 2589US11189568B2Top via interconnect having a line with a reduced bottom dimensionIBM·Filed 2020·Granted Nov 30, 2021·2 cites·4 claims
- 2689US11171084B2Top via with next level line selective growthIBM·Filed 2020·Granted Nov 9, 2021·2 cites·14 claims
- 2789US10943990B2Gate contact over active enabled by alternative spacer scheme and claw-shaped capIBM·Filed 2018·Granted Mar 9, 2021·5 cites·15 claims
- 2889US8987126B2Integrated circuit and method for fabricating the same having a replacement gate structureCHOI KISIK·Filed 2012·Granted Mar 24, 2015·11 cites·11 claims
- 2988US11195792B2Top via stackIBM·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 3087US11990412B2Buried power rails located in a base layer including first, second, and third etch stop layersIBM·Filed 2021·Granted May 21, 2024·1 cites·6 claims
- 3187US8354719B2Finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methodsGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 15, 2013·9 cites·26 claims
- 3286US11804436B2Self-aligned buried power rail cap for semiconductor devicesIBM·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
- 3385US12394660B2Buried power rail after replacement metal gateIBM·Filed 2021·Granted Aug 19, 2025·1 cites·17 claims
- 3485US8786030B2Gate-last fabrication of quarter-gap MGHK FETANDO TAKASHI·Filed 2012·Granted Jul 22, 2014·6 cites·5 claims
- 3584US12243913B2Self-aligned backside contact integration for transistorsIBM·Filed 2022·Granted Mar 4, 2025·1 cites·17 claims
- 3684US9263344B2Low threshold voltage CMOS deviceIBM·Filed 2014·Granted Feb 16, 2016·4 cites·9 claims
- 3784US9099393B2Enabling enhanced reliability and mobility for replacement gate planar and FinFET structuresIBM·Filed 2013·Granted Aug 4, 2015·5 cites·14 claims
- 3883US9431507B2Replacement gate structure with low-K sidewall spacer for semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 30, 2016·3 cites·22 claims
- 3983US9041118B2Replacement metal gate structure for CMOS deviceIBM·Filed 2014·Granted May 26, 2015·4 cites·11 claims
- 4081US11289371B2Top vias with selectively retained etch stopsIBM·Filed 2020·Granted Mar 29, 2022·1 cites·20 claims
- 4180US9349823B2Methods of scaling thickness of a gate dielectric structure, methods of forming an integrated circuit, and integrated circuitsGLOBALFOUNDRIES INC·Filed 2013·Granted May 24, 2016·5 cites·19 claims
- 4279US9165928B2Methods of forming gate structures for CMOS based integrated circuit products and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 20, 2015·4 cites·28 claims
- 4378US9024388B2Methods of forming gate structures for CMOS based integrated circuit products and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted May 5, 2015·4 cites·30 claims
- 4477US12300617B2Self-aligned buried power rail cap for semiconductor devicesIBM·Filed 2023·Granted May 13, 2025·0 cites·19 claims
- 4577US8895434B2Replacement metal gate structure for CMOS deviceIBM·Filed 2012·Granted Nov 25, 2014·3 cites·16 claims
- 4676US9496143B2Metal gate structure for midgap semiconductor device and method of making sameGLOBALFOUNDRIES INC·Filed 2012·Granted Nov 15, 2016·4 cites·2 claims
- 4775US9391164B2Method to improve reliability of replacement gate deviceIBM·Filed 2015·Granted Jul 12, 2016·1 cites·2 claims
- 4874US8741753B2Use of band edge gate metals as source drain contactsCHOI KISIK·Filed 2012·Granted Jun 3, 2014·3 cites·24 claims
- 4973US12243819B2Single-mask alternating line depositionIBM·Filed 2022·Granted Mar 4, 2025·0 cites·16 claims
- 5072US11791258B2Conductive lines with subtractive cutsIBM·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
Showing the top 50 of 203 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →