Inventor · disambiguated record
Koji Izunome
Also filed as: IZUNOME KOJI
18 granted patents·6 pending applications·115 citations·filing 1994–2021
93Inventor score
Files withTOSHIBA CERAMICS CO6COVALENT MATERIALS CORP4JAPAN RES DEV CORP4GLOBALWAFERS JAPAN CO LTD3SENDA TAKESHI3
Top patents by PatentIndex Score
24 records- 0187US7403278B2Surface inspection apparatus and surface inspection methodSHIBAURA MECHATRONICS CORP·Filed 2007·Granted Jul 22, 2008·21 cites·6 claims
- 0284US7250357B2Manufacturing method for strained silicon waferTOSHIBA CERAMICS CO·Filed 2005·Granted Jul 31, 2007·10 cites·7 claims
- 0377US7149341B2Wafer inspection apparatusSHIBAURA MECHATRONICS CORP·Filed 2003·Granted Dec 12, 2006·26 cites·15 claims
- 0475US7679730B2Surface inspection apparatus and surface inspection method for strained silicon waferSHIBAURA MECHATRONICS CORP·Filed 2006·Granted Mar 16, 2010·5 cites·8 claims
- 0569US7977219B2Manufacturing method for silicon waferCOVALENT MATERIALS CORP·Filed 2009·Granted Jul 12, 2011·3 cites·5 claims
- 0667US11887845B2Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrateGLOBALWAFERS JAPAN CO LTD·Filed 2021·Granted Jan 30, 2024·0 cites·5 claims
- 0767US7247583B2Manufacturing method for strained silicon waferTOSHIBA CERAMICS CO·Filed 2005·Granted Jul 24, 2007·3 cites·6 claims
- 0863US8476149B2Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling processISOGAI HIROMICHI·Filed 2009·Granted Jul 2, 2013·3 cites·10 claims
- 0958US7193294B2Semiconductor substrate comprising a support substrate which comprises a gettering siteTOSHIBA CERAMICS CO·Filed 2004·Granted Mar 20, 2007·6 cites·20 claims
- 1057US12371813B2Silicon wafer and method for producing silicon waferGLOBALWAFERS JAPAN CO LTD·Filed 2021·Granted Jul 29, 2025·0 cites·4 claims
- 1155US5477805APreparation of silicon melt for use in pull method of manufacturing single crystalJAPAN RES DEV CORP·Filed 1994·Granted Dec 26, 1995·12 cites·5 claims
- 1254US7060597B2Manufacturing method for a silicon substrate having strained layerTOSHIBA CERAMICS CO·Filed 2004·Granted Jun 13, 2006·5 cites·12 claims
- 1350US2020211840A1Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrateGLOBALWAFERS JAPAN CO LTD·Filed 2018·Application pending·0 cites
- 1446US5700320AGrowth of silicon single crystal having uniform impurity distribution along lengthwise or radial directionJAPAN RES DEV CORP·Filed 1996·Granted Dec 23, 1997·8 cites·4 claims
- 1544US5704974AGrowth of silicon crystal from melt having extraordinary eddy flows on its surfaceJAPAN RES DEV CORP·Filed 1996·Granted Jan 6, 1998·7 cites·4 claims
- 1644US2007068447A1Method of manufacturing silicon waferTOSHIBA CERAMICS CO·Filed 2006·Application pending·0 cites
- 1744US2008164572A1Semiconductor substrate and manufacturing method thereofCOVALENT MATERIALS CORP·Filed 2007·Application pending·0 cites
- 1844US2009004825A1Method of manufacturing semiconductor substrateCOVALENT MATERIALS CORP·Filed 2008·Application pending·0 cites
- 1944US2007240628A1Silicon waferTOSHIBA CERAMICS CO·Filed 2007·Application pending·0 cites
- 2041US8252700B2Method of heat treating silicon waferSENDA TAKESHI·Filed 2010·Granted Aug 28, 2012·0 cites·8 claims
- 2141US2008166891A1Heat treatment method for silicon waferCOVALENT MATERIALS CORP·Filed 2007·Application pending·0 cites
- 2239US8999864B2Silicon wafer and method for heat-treating silicon waferSENDA TAKESHI·Filed 2010·Granted Apr 7, 2015·0 cites·4 claims
- 2336US5683504AGrowth of silicon single crystalJAPAN RES DEV CORP·Filed 1996·Granted Nov 4, 1997·6 cites·1 claims
- 2434US8399341B2Method for heat treating a silicon waferSENDA TAKESHI·Filed 2010·Granted Mar 19, 2013·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →