Inventor · disambiguated record
Lawrence Wong
Also filed as: WONG LAWRENCE · WONG LAWRENCE D
47 granted patents·22 pending applications·755 citations·filing 1997–2020
98Inventor score
Files withAPPLIED MATERIALS INC27INTEL CORP23COLLINS KENNETH S3SIRIFIC WIRELESS CORP3RAMASWAMY KARTIK2
Top patents by PatentIndex Score
69 records- 0197US10957518B2Chamber with individually controllable plasma generation regions for a reactor for processing a workpieceAPPLIED MATERIALS INC·Filed 2020·Granted Mar 23, 2021·4 cites·13 claims
- 0296US8734664B2Method of differential counter electrode tuning in an RF plasma reactorAPPLIED MATERIALS INC·Filed 2013·Granted May 27, 2014·28 cites·19 claims
- 0396US7968469B2Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformityAPPLIED MATERIALS INC·Filed 2007·Granted Jun 28, 2011·46 cites·26 claims
- 0493US7115995B2Structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structuresINTEL CORP·Filed 2002·Granted Oct 3, 2006·69 cites·5 claims
- 0590US7879731B2Improving plasma process uniformity across a wafer by apportioning power among plural VHF sourcesAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·13 cites·28 claims
- 0689US6432811B1Method of forming structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structuresINTEL CORP·Filed 2000·Granted Aug 13, 2002·40 cites·12 claims
- 0788US8076247B2Plasma process uniformity across a wafer by controlling RF phase between opposing electrodesCOLLINS KENNETH S·Filed 2007·Granted Dec 13, 2011·11 cites·20 claims
- 0888US6057226AAir gap based low dielectric constant interconnect structure and method of making sameINTEL CORP·Filed 1997·Granted May 2, 2000·104 cites·17 claims
- 0987US7192856B2Forming dual metal complementary metal oxide semiconductor integrated circuitsINTEL CORP·Filed 2005·Granted Mar 20, 2007·13 cites·20 claims
- 1087US6703324B2Mechanically reinforced highly porous low dielectric constant filmsINTEL CORP·Filed 2000·Granted Mar 9, 2004·37 cites·18 claims
- 1186US7988815B2Plasma reactor with reduced electrical skew using electrical bypass elementsAPPLIED MATERIALS INC·Filed 2007·Granted Aug 2, 2011·11 cites·19 claims
- 1286US6734533B2Electron-beam treated CDO filmsINTEL CORP·Filed 2002·Granted May 11, 2004·24 cites·18 claims
- 1385US10017857B2Method and apparatus for controlling plasma near the edge of a substrateAPPLIED MATERIALS INC·Filed 2016·Granted Jul 10, 2018·4 cites·19 claims
- 1485US9161428B2Independent control of RF phases of separate coils of an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 2013·Granted Oct 13, 2015·11 cites·17 claims
- 1583US7972469B2Plasma processing apparatusAPPLIED MATERIALS INC·Filed 2007·Granted Jul 5, 2011·7 cites·23 claims
- 1683US6846737B1Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materialsINTEL CORP·Filed 2000·Granted Jan 25, 2005·24 cites·36 claims
- 1782US8080479B2Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonatorCOLLINS KENNETH S·Filed 2007·Granted Dec 20, 2011·6 cites·20 claims
- 1882US6973297B1Method and apparatus for down-conversion of radio frequency (RF) signals with reduced local oscillator leakageSIRIFIC WIRELESS CORP·Filed 2000·Granted Dec 6, 2005·18 cites·24 claims
- 1979US11522059B2Metallic sealants in transistor arrangementsINTEL CORP·Filed 2018·Granted Dec 6, 2022·2 cites·25 claims
- 2079US10153139B2Multiple electrode substrate support assembly and phase control systemAPPLIED MATERIALS INC·Filed 2015·Granted Dec 11, 2018·2 cites·19 claims
- 2179US7354862B2Thin passivation layer on 3D devicesINTEL CORP·Filed 2005·Granted Apr 8, 2008·9 cites·7 claims
- 2279US6984581B2Structural reinforcement of highly porous low k dielectric films by ILD postsINTEL CORP·Filed 2000·Granted Jan 10, 2006·24 cites·11 claims
- 2377US7884025B2Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sourcesAPPLIED MATERIALS INC·Filed 2007·Granted Feb 8, 2011·4 cites·24 claims
- 2477US6566757B1Stabilization of low dielectric constant film with in situ capping layerINTEL CORP·Filed 2000·Granted May 20, 2003·36 cites·9 claims
- 2576US6472315B2Method of via patterning utilizing hard mask and stripping patterning material at low temperatureINTEL CORP·Filed 2001·Granted Oct 29, 2002·24 cites·6 claims
- 2673US8578879B2Apparatus for VHF impedance match tuningRAMASWAMY KARTIK·Filed 2009·Granted Nov 12, 2013·7 cites·26 claims
- 2773US7214594B2Method of making semiconductor device using a novel interconnect cladding layerINTEL CORP·Filed 2002·Granted May 8, 2007·19 cites·17 claims
- 2873US5946601AUnique α-C:N:H/α-C:Nx film liner/barrier to prevent fluorine outdiffusion from α-FC chemical vapor deposition dielectric layersINTEL CORP·Filed 1997·Granted Aug 31, 1999·52 cites·12 claims
- 2968US11444205B2Contact stacks to reduce hydrogen in thin film transistorINTEL CORP·Filed 2018·Granted Sep 13, 2022·1 cites·23 claims
- 3067US10784085B2Plasma processing reactor with a magnetic electron-blocking filter external of the chamber and uniform field within the chamberAPPLIED MATERIALS INC·Filed 2015·Granted Sep 22, 2020·1 cites·14 claims
- 3167US7587458B2Delta code messagingNOKIA CORP·Filed 2005·Granted Sep 8, 2009·6 cites·12 claims
- 3267US6992391B2Dual-damascene interconnects without an etch stop layer by alternating ILDsINTEL CORP·Filed 2001·Granted Jan 31, 2006·12 cites·15 claims
- 3366US7046980B1Method and apparatus for up-and down-conversion of radio frequency (RF) signalsSIRIFIC WIRELESS CORP·Filed 2000·Granted May 16, 2006·7 cites·29 claims
- 3464US8148977B2Apparatus for characterizing a magnetic field in a magnetically enhanced substrate processing systemRAMASWAMY KARTIK·Filed 2009·Granted Apr 3, 2012·4 cites·13 claims
- 3562US6417098B1Enhanced surface modification of low K carbon-doped oxideINTEL CORP·Filed 1999·Granted Jul 9, 2002·29 cites·8 claims
- 3659US7215931B2Method and apparatus for up-and-down-conversion of radio frequency (RF) signalsSIRIFIC WIRELESS CORP·Filed 2002·Granted May 8, 2007·5 cites·42 claims
- 3758US10395904B2Method of real time in-situ chamber condition monitoring using sensors and RF communicationAPPLIED MATERIALS INC·Filed 2018·Granted Aug 27, 2019·0 cites·15 claims
- 3858US9472379B2Method of multiple zone symmetric gas injection for inductively coupled plasmaAPPLIED MATERIALS INC·Filed 2014·Granted Oct 18, 2016·0 cites·20 claims
- 3958US6593650B2Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materialsINTEL CORP·Filed 2002·Granted Jul 15, 2003·5 cites·7 claims
- 4058US2018366306A1Multiple electrode substrate support assembly and phase control systemAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 4157US10141166B2Method of real time in-situ chamber condition monitoring using sensors and RF communicationAPPLIED MATERIALS INC·Filed 2014·Granted Nov 27, 2018·0 cites·13 claims
- 4255US7164206B2Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layerINTEL CORP·Filed 2001·Granted Jan 16, 2007·8 cites·11 claims
- 4355US6083839AUnique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process controlINTEL CORP·Filed 1997·Granted Jul 4, 2000·16 cites·7 claims
- 4454US2011009999A1Plasma reactor with rf generator and automatic impedance match with minimum reflected power-seeking controlAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 4552US9412563B2Spatially discrete multi-loop RF-driven plasma source having plural independent zonesAPPLIED MATERIALS INC·Filed 2013·Granted Aug 9, 2016·0 cites·20 claims
- 4652US2010015357A1Capacitively coupled plasma etch chamber with multiple rf feedsHANAWA HIROJI·Filed 2008·Application pending·0 cites
- 4751US2017092470A1Plasma reactor for processing a workpiece with an array of plasma point sourcesAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 4850US10656194B2Real-time measurement of a surface charge profile of an electrostatic chuckAPPLIED MATERIALS INC·Filed 2015·Granted May 19, 2020·0 cites·19 claims
- 4950US9659751B2System and method for selective coil excitation in inductively coupled plasma processing reactorsAPPLIED MATERIALS INC·Filed 2014·Granted May 23, 2017·0 cites·19 claims
- 5050US2009025879A1Plasma reactor with reduced electrical skew using a conductive baffleRAUF SHAHID·Filed 2007·Application pending·0 cites
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →