Inventor · disambiguated record
Liqi Wu
Also filed as: WU LIQI
22 granted patents·36 pending applications·51 citations·filing 2010–2025
92Inventor score
Top patents by PatentIndex Score
58 records- 0194US10014185B1Selective etch of metal nitride filmsAPPLIED MATERIALS INC·Filed 2017·Granted Jul 3, 2018·22 cites·14 claims
- 0286US9748354B2Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereofAPPLIED MATERIALS INC·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 0384US12291779B2Methods of selective atomic layer depositionAPPLIED MATERIALS INC·Filed 2023·Granted May 6, 2025·0 cites·11 claims
- 0481US2025230545A1Methods of selective atomic layer depositionAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0579US9653352B2Methods for forming metal organic tungsten for middle of the line (MOL) applicationsAPPLIED MATERIALS INC·Filed 2014·Granted May 16, 2017·4 cites·20 claims
- 0677US10643840B2Selective deposition defects removal by chemical etchAPPLIED MATERIALS INC·Filed 2018·Granted May 5, 2020·2 cites·20 claims
- 0777US10608097B2Low thickness dependent work-function nMOS integration for metal gateAPPLIED MATERIALS INC·Filed 2018·Granted Mar 31, 2020·2 cites·17 claims
- 0877US9194045B2Continuous plasma and RF bias to regulate damage in a substrate processing systemNOVELLUS SYSTEMS INC·Filed 2013·Granted Nov 24, 2015·5 cites·30 claims
- 0976US8431033B2High density plasma etchback process for advanced metallization applicationsZHOU CHUNMING·Filed 2010·Granted Apr 30, 2013·7 cites·18 claims
- 1076US2019316256A1Methods Of Selective Atomic Layer DepositionAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 1174US10950433B2Methods for enhancing selectivity in SAM-based selective depositionAPPLIED MATERIALS INC·Filed 2018·Granted Mar 16, 2021·1 cites·11 claims
- 1273US11821085B2Methods of selective atomic layer depositionAPPLIED MATERIALS INC·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
- 1373US11075276B2Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursorsAPPLIED MATERIALS INC·Filed 2019·Granted Jul 27, 2021·1 cites·16 claims
- 1473US2024352577A1Methods for selective deposition using self-assembled monolayersAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1572US10770292B2Wafer treatment for achieving defect-free self-assembled monolayersAPPLIED MATERIALS INC·Filed 2018·Granted Sep 8, 2020·1 cites·27 claims
- 1670US12024770B2Methods for selective deposition using self-assembled monolayersAPPLIED MATERIALS INC·Filed 2019·Granted Jul 2, 2024·1 cites·18 claims
- 1770US2024038859A1Metal cap for contact resistance reductionAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1866US2022325410A1Gap fill methods using catalyzed depositionAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1965US11735420B2Wafer treatment for achieving defect-free self-assembled monolayersAPPLIED MATERIALS INC·Filed 2020·Granted Aug 22, 2023·0 cites·20 claims
- 2065US11515155B2Methods for enhancing selectivity in SAM-based selective depositionAPPLIED MATERIALS INC·Filed 2021·Granted Nov 29, 2022·0 cites·9 claims
- 2165US2023343643A1Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fillAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2265US2024404888A1Dual silicide process using ruthenium silicideAPPLIED MATERUALS INC·Filed 2024·Application pending·0 cites
- 2365US2025372448A1Methods for forming low resistivity contactsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2465US2025372450A1Methods for forming low resistivity contactsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2562US12351909B2Gap fill methods using catalyzed depositionAPPLIED MATERIALS INC·Filed 2021·Granted Jul 8, 2025·0 cites·6 claims
- 2661US12094785B2Dual silicide process using ruthenium silicideAPPLIED MATERIALS INC·Filed 2021·Granted Sep 17, 2024·0 cites·15 claims
- 2761US2021283650A1Methods and Apparatus for Cryogenic Gas Stream Assisted SAM-based Selective DepositionAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 2860US2025006552A1Bottom-up gap fill processes for semiconductor substratesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2959US2022231137A1Metal cap for contact resistance reductionAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 3058US12272551B2Selective metal removal with flowable polymerAPPLIED MATERIALS INC·Filed 2022·Granted Apr 8, 2025·0 cites·23 claims
- 3158US11033930B2Methods and apparatus for cryogenic gas stream assisted SAM-based selective depositionAPPLIED MATERIALS INC·Filed 2019·Granted Jun 15, 2021·0 cites·11 claims
- 3257US2025157824A1Selective metal Capping with Metal Halide enhancementAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3357US2025329538A1Selective plasma assisted deposition of a molybdenum silicideAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3456US2025125195A1Oligomer film for bottom-up gap fill processesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3555US2020347493A1Reverse Selective DepositionAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 3655US2024371654A1Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integrationAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3754US2024363407A1Low-energy underlayer for room temperature physical vapor deposition of electrically conductive featuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3853US2025112091A1Surface treatment enabling super-conformal metal cap profile on middle of-line (mol) silicidesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3953US2020106012A1Methods of forming nickel-containing filmsAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4052US2025174456A1Thermal cvd of titanium silicide methods to form semiconductor structuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4151US10957590B2Method for forming a layerAPPLIED MATERIALS INC·Filed 2019·Granted Mar 23, 2021·0 cites·12 claims
- 4251US2025054767A1Selective metal capping processes for a junction silicideAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4351US2024379363A1Methods for forming low resistivity contactsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4450US2025054812A1Selective bottom-up metal fill/cap on junction silicide by selective metal removalAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4550US2015193851A1Method, server, client terminal, and electronic commerce system for product comparisonTENCENT TECH SHENZHEN CO LTD·Filed 2013·Application pending·0 cites
- 4650US2025079239A1Selective capping for gate-all-around field effect transistorsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4750US2023326744A1Field suppressed metal gapfillAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4847US2022359279A1Methods of forming void and seam free metal featuresAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 4946US11450525B2Selective aluminum oxide film depositionAPPLIED MATERIALS INC·Filed 2018·Granted Sep 20, 2022·0 cites·14 claims
- 5045US2022223472A1Ruthenium Reflow For Via FillAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →