Inventor · disambiguated record
Luis Fernandez
Also filed as: FERNANDEZ LUIS · FERNANDEZ LUIS ISIDRO
8 granted patents·5 pending applications·20 citations·filing 2006–2023
81Inventor score
Files withTEL EPION INC6TEL MFG AND ENGINEERING OF AMERICA INC4FERNANDEZ LUIS ISIDRO1OLSEN CHRISTOPHER K1TOKYO ELECTRON LTD1
Top patents by PatentIndex Score
13 records- 0187US11694872B2Pattern enhancement using a gas cluster ion beamTEL MFG AND ENGINEERING OF AMERICA INC·Filed 2022·Granted Jul 4, 2023·1 cites·22 claims
- 0284US9209033B2GCIB etching method for adjusting fin height of finFET devicesTEL EPION INC·Filed 2014·Granted Dec 8, 2015·7 cites·20 claims
- 0377US8183161B2Method and system for dry etching a hafnium containing materialFERNANDEZ LUIS ISIDRO·Filed 2006·Granted May 22, 2012·9 cites·20 claims
- 0468US11450506B2Pattern enhancement using a gas cluster ion beamTEL MFG AND ENGINEERING OF AMERICA INC·Filed 2020·Granted Sep 20, 2022·0 cites·22 claims
- 0565US9324567B2Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materialsTEL EPION INC·Filed 2013·Granted Apr 26, 2016·1 cites·23 claims
- 0661US8722542B2Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact viaTEL EPION INC·Filed 2013·Granted May 13, 2014·1 cites·18 claims
- 0760US2024353751A1Optical elements patterningTEL MFG AND ENGINEERING OF AMERICA INC·Filed 2023·Application pending·0 cites
- 0858US8728947B2Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact viaOLSEN CHRISTOPHER K·Filed 2012·Granted May 20, 2014·1 cites·18 claims
- 0948US2021376123A1Substrate processing method for forming inner spacers in a nano-sheet deviceTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 1047US2010193898A1Method for forming trench isolation using gas cluster ion beam processingTEL EPION INC·Filed 2009·Application pending·0 cites
- 1143US2020273715A1Method of smoothing and planarizing of altic surfacesTEL MFG AND ENGINEERING OF AMERICA INC·Filed 2020·Application pending·0 cites
- 1239US10256095B2Method for high throughput using beam scan size and beam position in gas cluster ion beam processing systemTEL EPION INC·Filed 2016·Granted Apr 9, 2019·0 cites·11 claims
- 1332US2015270135A1Gas cluster ion beam etching processTEL EPION INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →