Inventor · disambiguated record
Marc A. Bergendahl
Also filed as: BERGENDAHL MARC · BERGENDAHL MARC A · BERGENDAHL MARC ADAM
115 granted patents·9 pending applications·1,140 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
124 records- 0199US9666528B1BEOL vertical fuse formed over air gapIBM·Filed 2016·Granted May 30, 2017·430 cites·14 claims
- 0299US9620590B1Nanosheet channel-to-source and drain isolationIBM·Filed 2016·Granted Apr 11, 2017·105 cites·13 claims
- 0399US9608065B1Air gap spacer for metal gatesIBM·Filed 2016·Granted Mar 28, 2017·141 cites·20 claims
- 0498US11043581B2Nanosheet channel-to-source and drain isolationTESSERA INC·Filed 2020·Granted Jun 22, 2021·4 cites·11 claims
- 0598US9905643B1Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistorsIBM·Filed 2016·Granted Feb 27, 2018·28 cites·18 claims
- 0698US9799765B1Formation of a bottom source-drain for vertical field-effect transistorsIBM·Filed 2016·Granted Oct 24, 2017·28 cites·14 claims
- 0798US9450095B1Single spacer for complementary metal oxide semiconductor process flowIBM·Filed 2016·Granted Sep 20, 2016·24 cites·16 claims
- 0898US8785284B1FinFETs and fin isolation structuresIBM·Filed 2013·Granted Jul 22, 2014·34 cites·18 claims
- 0997US10083961B2Gate cut with integrated etch stop layerIBM·Filed 2016·Granted Sep 25, 2018·14 cites·17 claims
- 1097US9449871B1Hybrid airgap structure with oxide linerIBM·Filed 2015·Granted Sep 20, 2016·21 cites·10 claims
- 1196US11776957B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2022·Granted Oct 3, 2023·1 cites·22 claims
- 1296US11652161B2Nanosheet channel-to-source and drain isolationTESSERA LLC·Filed 2021·Granted May 16, 2023·2 cites·21 claims
- 1396US11552077B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2021·Granted Jan 10, 2023·2 cites·25 claims
- 1496US10074730B2Forming stacked nanowire semiconductor deviceIBM·Filed 2016·Granted Sep 11, 2018·11 cites·17 claims
- 1596US9780027B2Hybrid airgap structure with oxide linerIBM·Filed 2016·Granted Oct 3, 2017·13 cites·18 claims
- 1696US9177820B2Sub-lithographic semiconductor structures with non-constant pitchIBM·Filed 2012·Granted Nov 3, 2015·20 cites·12 claims
- 1796US8906807B2Single fin cut employing angled processing methodsIBM·Filed 2012·Granted Dec 9, 2014·23 cites·20 claims
- 1896US8492274B2Metal alloy cap integrationIBM·Filed 2012·Granted Jul 23, 2013·19 cites·9 claims
- 1995US10211055B2Fin patterns with varying spacing without fin cutIBM·Filed 2018·Granted Feb 19, 2019·7 cites·11 claims
- 2095US10014391B2Vertical transport field effect transistor with precise gate length definitionIBM·Filed 2016·Granted Jul 3, 2018·10 cites·10 claims
- 2195US9917196B1Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Mar 13, 2018·8 cites·8 claims
- 2295US9728622B1Dummy gate formation using spacer pull down hardmaskIBM·Filed 2016·Granted Aug 8, 2017·11 cites·18 claims
- 2395US8896067B2Method of forming finFET of variable channel widthIBM·Filed 2013·Granted Nov 25, 2014·20 cites·13 claims
- 2494US10615269B2Nanosheet channel-to-source and drain isolationIBM·Filed 2018·Granted Apr 7, 2020·5 cites·12 claims
- 2594US10381437B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2017·Granted Aug 13, 2019·6 cites·11 claims
- 2694US10249738B2Nanosheet channel-to-source and drain isolationIBM·Filed 2016·Granted Apr 2, 2019·6 cites·9 claims
- 2794US9263290B2Sub-lithographic semiconductor structures with non-constant pitchGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 16, 2016·8 cites·7 claims
- 2893US11239316B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2019·Granted Feb 1, 2022·4 cites·20 claims
- 2993US8941156B2Self-aligned dielectric isolation for FinFET devicesIBM·Filed 2013·Granted Jan 27, 2015·13 cites·16 claims
- 3092US11127815B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2019·Granted Sep 21, 2021·4 cites·20 claims
- 3192US10043801B2Air gap spacer for metal gatesIBM·Filed 2017·Granted Aug 7, 2018·5 cites·20 claims
- 3292US9978560B2System and method for performing nano beam diffraction analysisIBM·Filed 2016·Granted May 22, 2018·6 cites·25 claims
- 3391US10998314B2Gate cut with integrated etch stop layerTESSERA INC·Filed 2020·Granted May 4, 2021·2 cites·17 claims
- 3491US2025142856A1Nanosheet channel-to-source and drain isolationADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2024·Application pending·0 cites
- 3590US2025142949A1Gate cut with integrated etch stop layerTESSERA LLC·Filed 2024·Application pending·0 cites
- 3689US10833190B2Super long channel device within VFET architectureIBM·Filed 2019·Granted Nov 10, 2020·4 cites·15 claims
- 3789US8003512B2Structure of UBM and solder bumps and methods of fabricationIBM·Filed 2009·Granted Aug 23, 2011·19 cites·19 claims
- 3888US12074165B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3988US8629511B2Mask free protection of work function material portions in wide replacement gate electrodesKOBURGER III CHARLES W·Filed 2012·Granted Jan 14, 2014·10 cites·16 claims
- 4087US11615992B2Substrate isolated VTFET devicesIBM·Filed 2020·Granted Mar 28, 2023·2 cites·14 claims
- 4187US10770653B1Selective dielectric deposition to prevent gouging in MRAMIBM·Filed 2019·Granted Sep 8, 2020·7 cites·7 claims
- 4287US10388525B2Multi-angled deposition and masking for custom spacer trim and selected spacer removalIBM·Filed 2017·Granted Aug 20, 2019·3 cites·19 claims
- 4386US12166110B2Nanosheet channel-to-source and drain isolationADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Dec 10, 2024·0 cites·23 claims
- 4486US11557589B2Air gap spacer for metal gatesTESSERA LLC·Filed 2020·Granted Jan 17, 2023·1 cites·17 claims
- 4586US11462631B2Sublithography gate cut physical unclonable functionIBM·Filed 2020·Granted Oct 4, 2022·2 cites·20 claims
- 4685US10903111B2Semiconductor device with linerless contactsIBM·Filed 2019·Granted Jan 26, 2021·4 cites·11 claims
- 4785US10607991B2Air gap spacer for metal gatesTESSERA INC·Filed 2018·Granted Mar 31, 2020·2 cites·20 claims
- 4885US9991117B2Fin patterns with varying spacing without fin cutIBM·Filed 2017·Granted Jun 5, 2018·2 cites·20 claims
- 4985US9984877B2Fin patterns with varying spacing without fin cutIBM·Filed 2017·Granted May 29, 2018·2 cites·20 claims
- 5085US8716127B2Metal alloy cap integrationIBM·Filed 2013·Granted May 6, 2014·6 cites·20 claims
Showing the top 50 of 124 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →