Inventor · disambiguated record
Markus Kahn
Also filed as: KAHN MARKUS · KAHN MARKUS HELMUT
29 granted patents·13 pending applications·48 citations·filing 2005–2024
95Inventor score
Files withINFINEON TECHNOLOGIES AG26INFINEON TECHNOLOGIES AUSTRIA AG5KAHN MARKUS HELMUT3BAUMANN MARCUS2KAHN MARKUS2
Top patents by PatentIndex Score
42 records- 0193US10710874B2Micromechanical structure and method for manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 14, 2020·9 cites·21 claims
- 0285US9212045B1Micro mechanical structure and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 15, 2015·6 cites·26 claims
- 0381US8498917B2Systems and methods for providing migration and performance matricesKAHN MARKUS HELMUT·Filed 2012·Granted Jul 30, 2013·3 cites·12 claims
- 0481US8311918B2Systems and methods for calculating specified matricesBAUMANN MARCUS·Filed 2012·Granted Nov 13, 2012·3 cites·26 claims
- 0578US10629416B2Wafer chuck and processing arrangementINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 21, 2020·3 cites·19 claims
- 0677US8095442B2Systems and methods for calculating specified matricesBAUMANN MARCUS·Filed 2006·Granted Jan 10, 2012·4 cites·17 claims
- 0776US7596520B2Systems and methods for general aggregation of characteristics and key figuresSAP AG·Filed 2005·Granted Sep 29, 2009·4 cites·23 claims
- 0875US9455136B2Controlling the reflow behaviour of BPSG films and devices made thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 27, 2016·2 cites·24 claims
- 0975US9257342B2Methods of singulating substrates to form semiconductor devices using dummy materialINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 9, 2016·2 cites·22 claims
- 1074US8200557B2Systems and methods for providing migration and performance matricesKAHN MARKUS HELMUT·Filed 2005·Granted Jun 12, 2012·3 cites·14 claims
- 1172US8748297B2Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill materialSTRANZL GUDRUN·Filed 2012·Granted Jun 10, 2014·3 cites·28 claims
- 1268US11804415B2Semiconductor device with first and second portions that include silicon and nitrogenINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 1368US9511560B2Processing a sacrificial material during manufacture of a microfabricated productDENIFL GUENTER·Filed 2012·Granted Dec 6, 2016·3 cites·16 claims
- 1468US2023343726A1High Voltage Semiconductor Device with Step Topography Passivation Layer StackINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1565US2013290168A1Systems and methods for providing migration and performance matricesKAHN MARKUS HELMUT·Filed 2013·Application pending·0 cites
- 1664US11352253B2Semiconductor device, microphone and methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 1764US10081533B2Micromechanical structure and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Sep 25, 2018·1 cites·39 claims
- 1864US9941111B2Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layerINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 10, 2018·1 cites·12 claims
- 1963US8150749B2Systems and methods for general aggregation of characteristics and key figuresKAHN MARKUS·Filed 2009·Granted Apr 3, 2012·0 cites·20 claims
- 2062US2017197865A1Mold, method for producing a mold, and method for forming a mold articleINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Application pending·0 cites
- 2162US2025183175A1Semiconductor device with metal structure passivationINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2261US9728480B2Passivation layer and method of making a passivation layerINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 8, 2017·1 cites·18 claims
- 2360US11075134B2Semiconductor device with a portion including silicon and nitrogen and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·24 claims
- 2459US2015175467A1Mold, method for producing a mold, and method for forming a mold articleINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Application pending·0 cites
- 2558US2021151391A1High Voltage Semiconductor Device with Step Topography Passivation Layer StackINFINEON TECHNOLOGIES AG·Filed 2020·Application pending·0 cites
- 2657US10325803B2Semiconductor wafer and method for processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 18, 2019·0 cites·13 claims
- 2755US9984915B2Semiconductor wafer and method for processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 29, 2018·0 cites·9 claims
- 2855US9741618B2Methods of forming semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 22, 2017·0 cites·23 claims
- 2954US11387081B2Wafer chuck and processing arrangementINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 12, 2022·0 cites·9 claims
- 3053US2018247820A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Application pending·0 cites
- 3151US2024194779A1Semiconductor device and method of producing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 3250US10858246B2Semiconductor device, microphone and methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 8, 2020·0 cites·17 claims
- 3349US10049879B2Self aligned silicon carbide contact formation using protective layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 3449US2015278937A1Systems and methods of providing key figure informationKAHN MARKUS·Filed 2014·Application pending·0 cites
- 3549US2017011927A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 3648US9666482B1Self aligned silicon carbide contact formation using protective layerINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 3745US2014117511A1Passivation Layer and Method of Making a Passivation LayerINFINEON TECHNOLOGIES AG·Filed 2012·Application pending·0 cites
- 3840US10106398B2Micromechanical structure comprising carbon material and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 23, 2018·0 cites·33 claims
- 3940US2019333765A1Semiconductor Device and ManufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
- 4039US9917170B2Carbon based contact structure for silicon carbide device technical fieldINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·0 cites·18 claims
- 4139US9478409B2Method for coating a workpieceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 25, 2016·0 cites·14 claims
- 4239US2014335700A1Carbon Layers for High Temperature ProcessesINFINEON TECHNOLOGIES AG·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →