Inventor · disambiguated record
Masami Shibagaki
Also filed as: SHIBAGAKI MASAMI
20 granted patents·4 pending applications·1,146 citations·filing 1988–2016
94Inventor score
Files withCANON ANELVA CORP10SHIBAGAKI MASAMI6ANELVA CORP2CANON ANELVA ENGINEERING CORP2MASAKI NOBUYUKI2
Top patents by PatentIndex Score
24 records- 0197US7780440B2Substrate supporting/transferring trayCANON ANELVA CORP·Filed 2005·Granted Aug 24, 2010·545 cites·10 claims
- 0296US8147242B2Substrate supporting/transferring traySHIBAGAKI MASAMI·Filed 2009·Granted Apr 3, 2012·544 cites·7 claims
- 0382US7732739B2Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatmentCANON ANELVA CORP·Filed 2005·Granted Jun 8, 2010·9 cites·6 claims
- 0478US7807553B2Substrate heating apparatus and semiconductor fabrication methodCANON ANELVA CORP·Filed 2007·Granted Oct 5, 2010·7 cites·10 claims
- 0575US8032015B2Heating apparatus, heating method, and semiconductor device manufacturing methodCANON ANELVA CORP·Filed 2009·Granted Oct 4, 2011·4 cites·6 claims
- 0673US9991119B2Heat treatment method and heat treatment apparatus for semiconductor substrateCANON ANELVA CORP·Filed 2016·Granted Jun 5, 2018·2 cites·7 claims
- 0773US8187958B2Substrate processing method and method of manufacturing crystalline silicon carbide (SIC) substrateSHIBAGAKI MASAMI·Filed 2011·Granted May 29, 2012·3 cites·12 claims
- 0873US8129663B2Vacuum heating apparatusMASAKI NOBUYUKI·Filed 2009·Granted Mar 6, 2012·5 cites·6 claims
- 0969US8198182B2Annealing method for semiconductor device with silicon carbide substrate and semiconductor deviceSHIBAGAKI MASAMI·Filed 2011·Granted Jun 12, 2012·2 cites·6 claims
- 1065US9603195B2Substrate heat treatment apparatusCANON ANELVA CORP·Filed 2014·Granted Mar 21, 2017·2 cites·12 claims
- 1160US8150243B2Heating process apparatusKUMAGAI AKIRA·Filed 2009·Granted Apr 3, 2012·3 cites·14 claims
- 1260US7897523B2Substrate heating apparatus, heating method, and semiconductor device manufacturing methodCANON ANELVA ENGINEERING CORP·Filed 2009·Granted Mar 1, 2011·2 cites·14 claims
- 1358US9147742B2Heat treatment apparatus and semiconductor device manufacturing methodDOI HIROSHI·Filed 2011·Granted Sep 29, 2015·1 cites·12 claims
- 1458US8691676B2Substrate heat treating apparatus, temperature control method of substrate heat treating apparatus, manufacturing method of semiconductor device, temperature control program of substrate heat treating apparatus, and recording mediumSHIBAGAKI MASAMI·Filed 2011·Granted Apr 8, 2014·1 cites·6 claims
- 1558US8426323B2Substrate processing apparatus, substrate annealing method, and semiconductor device manufacturing methodMASAKI NOBUYUKI·Filed 2009·Granted Apr 23, 2013·1 cites·7 claims
- 1657US9431281B2Temperature control method for substrate heat treatment apparatus, semiconductor device manufacturing method, temperature control program for substrate heat treatment apparatus, and recording mediumSHIBAGAKI MASAMI·Filed 2010·Granted Aug 30, 2016·1 cites·4 claims
- 1756US8090245B2Apparatus for heat-treating substrate and method for heat-treating substrateSHIBAGAKI MASAMI·Filed 2009·Granted Jan 3, 2012·1 cites·19 claims
- 1849US6887522B2Method for forming a copper thin filmANELVA CORP·Filed 2002·Granted May 3, 2005·2 cites·40 claims
- 1949US2010025695A1Annealing method for semiconductor device with silicon carbide substrate and semiconductor deviceCANON ANELVA CORP·Filed 2007·Application pending·0 cites
- 2045US11195700B2Etching apparatusCANON ANELVA CORP·Filed 2014·Granted Dec 7, 2021·0 cites·23 claims
- 2143US4885054AEtching methodANELVA CORP·Filed 1988·Granted Dec 5, 1989·11 cites·14 claims
- 2242US2009218579A1Substrate heating apparatus, semiconductor device manufacturing method, and semiconductor deviceCANON ANELVA ENGINEERING CORP·Filed 2009·Application pending·0 cites
- 2336US2010226630A1Apparatus for heat-treating substrate and substrate manufacturing methodCANON ANELVA CORP·Filed 2010·Application pending·0 cites
- 2434US2010243618A1Temperature control method for heating apparatusCANON ANELVA CORP·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →