Inventor · disambiguated record
Martin D. Tabat
Also filed as: TABAT MARTIN · TABAT MARTIN D
18 granted patents·6 pending applications·352 citations·filing 1995–2021
94Inventor score
Files withTEL EPION INC12TABAT MARTIN D6SHAO YAN2TEL MFG AND ENGINEERING OF AMERICA INC2AEROSPACE CORP1
Top patents by PatentIndex Score
24 records- 0198US7060989B2Method and apparatus for improved processing with a gas-cluster ion beamEPION CORP·Filed 2005·Granted Jun 13, 2006·90 cites·23 claims
- 0297US7259036B2Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film productsTEL EPION INC·Filed 2005·Granted Aug 21, 2007·131 cites·40 claims
- 0394US7410890B2Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Aug 12, 2008·28 cites·52 claims
- 0490US8097860B2Multiple nozzle gas cluster ion beam processing system and method of operatingTABAT MARTIN D·Filed 2010·Granted Jan 17, 2012·13 cites·20 claims
- 0585US8455060B2Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beamTABAT MARTIN D·Filed 2009·Granted Jun 4, 2013·6 cites·20 claims
- 0685US7905199B2Method and system for directional growth using a gas cluster ion beamTEL EPION INC·Filed 2008·Granted Mar 15, 2011·8 cites·19 claims
- 0784US7642531B2Apparatus and method for reducing particulate contamination in gas cluster ion beam processing equipmentTEL EPION INC·Filed 2007·Granted Jan 5, 2010·7 cites·23 claims
- 0883US8202435B2Method for selectively etching areas of a substrate using a gas cluster ion beamTABAT MARTIN D·Filed 2008·Granted Jun 19, 2012·9 cites·23 claims
- 0982US8512586B2Gas cluster ion beam etching process for achieving target etch process metrics for multiple materialsTABAT MARTIN D·Filed 2011·Granted Aug 20, 2013·5 cites·20 claims
- 1075US8304033B2Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzlesTABAT MARTIN D·Filed 2009·Granted Nov 6, 2012·3 cites·45 claims
- 1173US5607601AMethod for patterning and etching film layers of semiconductor devicesAEROSPACE CORP·Filed 1995·Granted Mar 4, 1997·46 cites·17 claims
- 1271US8981322B2Multiple nozzle gas cluster ion beam systemTABAT MARTIN D·Filed 2009·Granted Mar 17, 2015·2 cites·58 claims
- 1369US8513138B2Gas cluster ion beam etching process for Si-containing and Ge-containing materialsSHAO YAN·Filed 2011·Granted Aug 20, 2013·3 cites·11 claims
- 1465US9324567B2Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materialsTEL EPION INC·Filed 2013·Granted Apr 26, 2016·1 cites·23 claims
- 1562US10861674B2Compensated location specific processing apparatus and methodTEL EPION INC·Filed 2019·Granted Dec 8, 2020·0 cites·19 claims
- 1657US11715620B2Tuning gas cluster ion beam systemsTEL MFG AND ENGINEERING OF AMERICA INC·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 1756US10497540B2Compensated location specific processing apparatus and methodTEL EPION INC·Filed 2018·Granted Dec 3, 2019·0 cites·19 claims
- 1853US2008245974A1Method of introducing material into a substrate by gas-cluster ion beam irradiationTEL EPION INC·Filed 2008·Application pending·0 cites
- 1952US2013309872A1Gas cluster ion beam etching process for achieving target etch process metrics for multiple materialsTEL EPION INC·Filed 2013·Application pending·0 cites
- 2050US2009233004A1Method and system for depositing silicon carbide film using a gas cluster ion beamTEL EPION INC·Filed 2008·Application pending·0 cites
- 2147US2010193898A1Method for forming trench isolation using gas cluster ion beam processingTEL EPION INC·Filed 2009·Application pending·0 cites
- 2243US2020273715A1Method of smoothing and planarizing of altic surfacesTEL MFG AND ENGINEERING OF AMERICA INC·Filed 2020·Application pending·0 cites
- 2337US8557710B2Gas cluster ion beam etching process for metal-containing materialsSHAO YAN·Filed 2011·Granted Oct 15, 2013·0 cites·6 claims
- 2432US2015270135A1Gas cluster ion beam etching processTEL EPION INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →