Inventor · disambiguated record
Michel J. Abou-Khalil
Also filed as: ABOU-KHALIL MICHEL · ABOU-KHALIL MICHEL J
56 granted patents·5 pending applications·410 citations·filing 2006–2022
98Inventor score
Top patents by PatentIndex Score
61 records- 0199US7786535B2Design structures for high-voltage integrated circuitsIBM·Filed 2008·Granted Aug 31, 2010·249 cites·14 claims
- 0295US9716136B1Embedded polysilicon resistors with crystallization barriersGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 25, 2017·12 cites·12 claims
- 0394US8445355B2Metal-insulator-metal capacitors with high capacitance densityABOU-KHALIL MICHEL J·Filed 2010·Granted May 21, 2013·18 cites·22 claims
- 0493US8373956B2Low leakage electrostatic discharge protection circuitIBM·Filed 2010·Granted Feb 12, 2013·14 cites·22 claims
- 0590US8299544B2Field effect transistor having ohmic body contact(s), an integrated circuit structure incorporating stacked field effect transistors with such ohmic body contacts and associated methodsABOU-KHALIL MICHEL J·Filed 2011·Granted Oct 30, 2012·12 cites·10 claims
- 0689US8760831B2Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structuresIBM·Filed 2013·Granted Jun 24, 2014·6 cites·20 claims
- 0789US7714356B2Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltageIBM·Filed 2007·Granted May 11, 2010·17 cites·20 claims
- 0888US11437522B2Field-effect transistors with a polycrystalline body in a shallow trench isolation regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 6, 2022·2 cites·14 claims
- 0988US11158535B2Multi-depth regions of high resistivity in a semiconductor substrateGLOBALFOUNDRIES US INC·Filed 2019·Granted Oct 26, 2021·4 cites·20 claims
- 1085US11848324B2Efuse inside and gate structure on triple-well regionGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 19, 2023·1 cites·20 claims
- 1184US8686508B2Structures, methods and applications for electrical pulse anneal processesABOU-KHALIL MICHEL J·Filed 2009·Granted Apr 1, 2014·5 cites·9 claims
- 1283US8891212B2RC-triggered semiconductor controlled rectifier for ESD protection of signal padsABOU-KHALIL MICHEL J·Filed 2011·Granted Nov 18, 2014·7 cites·24 claims
- 1382US8101505B2Programmable electrical fuseABOU-KHALIL MICHEL J·Filed 2008·Granted Jan 24, 2012·9 cites·13 claims
- 1481US8669146B2Semiconductor structures with thinned junctions and methods of manufactureABOU-KHALIL MICHEL J·Filed 2011·Granted Mar 11, 2014·5 cites·15 claims
- 1580US8299547B2Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric platesABOU-KHALIL MICHEL J·Filed 2011·Granted Oct 30, 2012·5 cites·24 claims
- 1680US7826185B2Structure and circuit technique for uniform triggering of multifinger semiconductor devices with tunable trigger voltageIBM·Filed 2007·Granted Nov 2, 2010·9 cites·32 claims
- 1779US8796731B2Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structureABOU-KHALIL MICHEL J·Filed 2010·Granted Aug 5, 2014·5 cites·23 claims
- 1877US8503140B2Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structuresABOU-KHALIL MICHEL J·Filed 2010·Granted Aug 6, 2013·3 cites·15 claims
- 1973US9214561B2Thin body switch transistorIBM·Filed 2013·Granted Dec 15, 2015·3 cites·17 claims
- 2073US9070629B2Through silicon via repairIBM·Filed 2013·Granted Jun 30, 2015·2 cites·6 claims
- 2172US8634174B2Gate dielectric breakdown protection during ESD eventsABOU-KHALIL MICHEL J·Filed 2011·Granted Jan 21, 2014·3 cites·14 claims
- 2271US10818763B1Field-effect transistors with laterally-serpentine gatesGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·1 cites·20 claims
- 2370US11728348B2Vertically stacked field effect transistorsGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 15, 2023·0 cites·19 claims
- 2470US11315825B2Semiconductor structures including stacked depleted and high resistivity regionsGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 26, 2022·1 cites·19 claims
- 2569US10062711B2Wafers and device structures with body contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 28, 2018·1 cites·19 claims
- 2669US7968908B2Bidirectional electrostatic discharge protection structure for high voltage applicationsIBM·Filed 2009·Granted Jun 28, 2011·4 cites·20 claims
- 2767US8421128B2Semiconductor device heat dissipation structureABOU-KHALIL MICHEL J·Filed 2007·Granted Apr 16, 2013·3 cites·19 claims
- 2867US7881028B2E-fuse used to disable a triggering networkIBM·Filed 2008·Granted Feb 1, 2011·3 cites·15 claims
- 2966US12400927B2High-mobility-electron transistors having heat dissipating structuresGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 26, 2025·0 cites·14 claims
- 3066US10755949B2Structures, methods and applications for electrical pulse anneal processesIBM·Filed 2018·Granted Aug 25, 2020·0 cites·9 claims
- 3165US8637353B2Through silicon via repairABOU-KHALIL MICHEL J·Filed 2011·Granted Jan 28, 2014·1 cites·5 claims
- 3265US2019198347A1Structures, methods and applications for electrical pulse anneal processesIBM·Filed 2019·Application pending·0 cites
- 3364US8847354B2Metal-insulator-metal capacitors with high capacitance densityIBM·Filed 2013·Granted Sep 30, 2014·1 cites·7 claims
- 3464US8642452B2Semiconductor-on-insulator device with asymmetric structureABOU-KHALIL MICHEL J·Filed 2011·Granted Feb 4, 2014·1 cites·20 claims
- 3563US8748985B2Semiconductor structures with thinned junctions and methods of manufactureIBM·Filed 2014·Granted Jun 10, 2014·1 cites·8 claims
- 3662US8217455B2Semiconductor-on-insulator device structures with a body-to-substrate connection for enhanced electrostatic discharge protection, and design structures for such semiconductor-on-insulator device structuresABOU-KHALIL MICHEL J·Filed 2008·Granted Jul 10, 2012·2 cites·14 claims
- 3761US11183514B2Vertically stacked field effect transistorsGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 23, 2021·0 cites·10 claims
- 3860US9881810B2Structures, methods and applications for electrical pulse anneal processesIBM·Filed 2014·Granted Jan 30, 2018·0 cites·13 claims
- 3959US10283374B2Structures, methods and applications for electrical pulse anneal processesIBM·Filed 2015·Granted May 7, 2019·0 cites·12 claims
- 4059US10037895B2Structures, methods and applications for electrical pulse anneal processesIBM·Filed 2015·Granted Jul 31, 2018·0 cites·17 claims
- 4158US12230673B2Field-effect transistors having a gate electrode positioned inside a substrate recessGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 4257US10163892B2Silicon controlled rectifiers (SCR), methods of manufacture and design structuresIBM·Filed 2014·Granted Dec 25, 2018·0 cites·20 claims
- 4356US11658177B2Semiconductor device structures with a substrate biasing schemeGLOBALFOUNDRIES US INC·Filed 2020·Granted May 23, 2023·0 cites·9 claims
- 4456US10446435B2Local trap-rich isolationGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·0 cites·9 claims
- 4556US8912625B2Semiconductor-on-insulator device with asymmetric structureIBM·Filed 2013·Granted Dec 16, 2014·0 cites·16 claims
- 4652US11411087B2Integrated circuit (IC) structure with high impedance semiconductor material between substrate and transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 9, 2022·0 cites·20 claims
- 4752US8482067B2Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistorABOU-KHALIL MICHEL J·Filed 2012·Granted Jul 9, 2013·0 cites·20 claims
- 4851US8906751B2Silicon controlled rectifiers (SCR), methods of manufacture and design structuresABOU-KHALIL MICHEL J·Filed 2011·Granted Dec 9, 2014·0 cites·13 claims
- 4951US2018204926A1Transistor using selective undercut at gate conductor and gate insulator cornerGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 5051US2024088157A1Semiconductor device structures isolated by porous semiconductor materialGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →