Inventor · disambiguated record
Ming-Hsiu Lee
Also filed as: LEE MING H · LEE MING-HSIU
145 granted patents·23 pending applications·1,360 citations·filing 1998–2024
99Inventor score
Files withMACRONIX INT CO LTD127LEE MING-HSIU11LUNG HSIANG-LAN6CHIEN WEI-CHIH5QIMONDA NORTH AMERICA CORP3
Top patents by PatentIndex Score
168 records- 0199US8426294B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2012·Granted Apr 23, 2013·165 cites·18 claims
- 0299US8203187B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2010·Granted Jun 19, 2012·309 cites·24 claims
- 0398US11871588B2Memory device and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2021·Granted Jan 9, 2024·3 cites·10 claims
- 0498US8437192B23D two bit-per-cell NAND flash memoryLUNG HSIANG-LAN·Filed 2010·Granted May 7, 2013·61 cites·13 claims
- 0597US7554873B2Three-dimensional memory devices and methods of manufacturing and operating the sameMACRONIX INT CO LTD·Filed 2006·Granted Jun 30, 2009·44 cites·13 claims
- 0696US7266014B2Method of operating non-volatile memory deviceMACRONIX INT CO LTD·Filed 2005·Granted Sep 4, 2007·58 cites·16 claims
- 0796US7209390B2Operation scheme for spectrum shift in charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2004·Granted Apr 24, 2007·111 cites·39 claims
- 0895US11587617B2Ternary content addressable memory and decision generation method for the sameMACRONIX INT CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·15 claims
- 0994US11664070B2In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit ordersMACRONIX INT CO LTD·Filed 2021·Granted May 30, 2023·3 cites·13 claims
- 1092US8363463B2Phase change memory having one or more non-constant doping profilesMACRONIX INT CO LTD·Filed 2010·Granted Jan 29, 2013·16 cites·10 claims
- 1192US8036014B2Phase change memory program method without over-resetMACRONIX INT CO LTD·Filed 2008·Granted Oct 11, 2011·27 cites·32 claims
- 1292US7777275B2Silicon-on-insulator structuresMACRONIX INT CO LTD·Filed 2006·Granted Aug 17, 2010·23 cites·5 claims
- 1392US6002114AControl device for an electric water heaterFiled 1998·Granted Dec 14, 1999·77 cites·3 claims
- 1491US9852791B1Semiconductor memory device, chip ID generation method thereof and manufacturing method thereofMACRONIX INT CO LTD·Filed 2017·Granted Dec 26, 2017·7 cites·15 claims
- 1591US8238149B2Methods and apparatus for reducing defect bits in phase change memorySHIH YEN-HAO·Filed 2010·Granted Aug 7, 2012·15 cites·20 claims
- 1690US8634235B2Phase change memory codingLUNG HSIANG-LAN·Filed 2010·Granted Jan 21, 2014·13 cites·22 claims
- 1790US7656701B2Method for programming a multilevel phase change memory deviceMACRONIX INT CO LTD·Filed 2007·Granted Feb 2, 2010·16 cites·16 claims
- 1889US11587623B2Content-addressable memory and operation method thereofMACRONIX INT CO LTD·Filed 2021·Granted Feb 21, 2023·2 cites·10 claims
- 1989US8350316B2Phase change memory cells having vertical channel access transistor and memory planeMACRONIX INT CO LTD·Filed 2009·Granted Jan 8, 2013·13 cites·20 claims
- 2089US8077506B2Method for programming a multilevel phase change memory deviceLEE MING-HSIU·Filed 2010·Granted Dec 13, 2011·9 cites·5 claims
- 2188US8699258B2Verification algorithm for metal-oxide resistive memoryCHIEN WEI-CHIH·Filed 2011·Granted Apr 15, 2014·14 cites·23 claims
- 2287US10741244B1Memory and operating method thereofMACRONIX INT CO LTD·Filed 2019·Granted Aug 11, 2020·7 cites·11 claims
- 2387US8324605B2Dielectric mesh isolated phase change structure for phase change memoryLUNG HSIANG-LAN·Filed 2008·Granted Dec 4, 2012·16 cites·21 claims
- 2485US11955168B2Memory device and computing method using the sameMACRONIX INT CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
- 2585US7944740B2Multi-level cell programming of PCM by varying the reset amplitudeIBM·Filed 2009·Granted May 17, 2011·19 cites·18 claims
- 2684US8962466B2Low temperature transition metal oxide for memory deviceMACRONIX INT CO LTD·Filed 2013·Granted Feb 24, 2015·6 cites·19 claims
- 2784US7869270B2Set algorithm for phase change memory cellMACRONIX INT CO LTD·Filed 2008·Granted Jan 11, 2011·12 cites·20 claims
- 2883US12068030B2CAM cell, CAM device and operation method thereof, and method for searching and comparing dataMACRONIX INT CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·7 claims
- 2983US7589368B2Three-dimensional memory devicesMICRONIX INTERNAT CO LTD·Filed 2006·Granted Sep 15, 2009·10 cites·30 claims
- 3082US9501042B1Timing device and method thereofMACRONIX INT CO LTD·Filed 2015·Granted Nov 22, 2016·3 cites·20 claims
- 3181US7272037B2Method for programming a multilevel phase change memory deviceMACRONIX INT CO LTD·Filed 2004·Granted Sep 18, 2007·20 cites·21 claims
- 3281US2025131960A1Ternary content addressable memory and decision generation method for the sameMACRONIX INT CO LTD·Filed 2024·Application pending·0 cites
- 3379US12211550B2Ternary content addressable memory and decision generation method for the sameMACRONIX INT CO LTD·Filed 2024·Granted Jan 28, 2025·0 cites·18 claims
- 3479US8891293B2High-endurance phase change memory devices and methods for operating the sameDU PEI-YING·Filed 2012·Granted Nov 18, 2014·9 cites·22 claims
- 3578US11328775B2Ternary content addressable memory and memory cell thereofMACRONIX INT CO LTD·Filed 2020·Granted May 10, 2022·1 cites·8 claims
- 3678US9019771B2Dielectric charge trapping memory cells with redundancyLUNG HSIANG-LAN·Filed 2012·Granted Apr 28, 2015·6 cites·14 claims
- 3778US8374019B2Phase change memory with fast write characteristicsMACRONIX INT CO LTD·Filed 2011·Granted Feb 12, 2013·6 cites·23 claims
- 3878US8241928B2Test structure and method for detecting charge effects during semiconductor processingLEE MING-HSIU·Filed 2010·Granted Aug 14, 2012·4 cites·19 claims
- 3978US7564710B2Circuit for programming a memory elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jul 21, 2009·10 cites·29 claims
- 4077US9019769B2Semiconductor device and manufacturing method and operating method for the sameMACRONIX INT CO LTD·Filed 2012·Granted Apr 28, 2015·4 cites·19 claims
- 4177US7371604B2Method of forming a contact structureMACRONIX INT CO LTD·Filed 2006·Granted May 13, 2008·6 cites·11 claims
- 4276US12114514B2Method for manufacturing memory deviceMACRONIX INT CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·10 claims
- 4376US8198619B2Phase change memory cell structureLEE MING-HSIU·Filed 2009·Granted Jun 12, 2012·8 cites·15 claims
- 4476US7817472B2Operating method of memory deviceMACRONIX INT CO LTD·Filed 2008·Granted Oct 19, 2010·9 cites·15 claims
- 4576US6890819B2Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereofMACRONIX INT CO LTD·Filed 2003·Granted May 10, 2005·16 cites·19 claims
- 4676US2025022508A1Memory device for in-memory computingMACRONIX INT CO LTD·Filed 2024·Application pending·0 cites
- 4775US11923008B2Ternary content addressable memory and decision generation method for the sameMACRONIX INT CO LTD·Filed 2023·Granted Mar 5, 2024·0 cites·20 claims
- 4875US11138497B2In-memory computing devices for neural networksMACRONIX INT CO LTD·Filed 2018·Granted Oct 5, 2021·2 cites·20 claims
- 4975US9373382B1Method for healing phase-change memory device and applications thereofMACRONIX INT CO LTD·Filed 2015·Granted Jun 21, 2016·4 cites·16 claims
- 5075US7626858B2Integrated circuit having a precharging circuitQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Dec 1, 2009·9 cites·22 claims
Showing the top 50 of 168 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →