Inventor · disambiguated record
Ming-Ta Lei
Also filed as: LEI MING · LEI MING-TA
60 granted patents·23 pending applications·1,111 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD45TAIWAN SEMICONDUCTOR MFG13MEGICA CORP7MEGIC CORP5LEE JIN-YUAN3
Top patents by PatentIndex Score
83 records- 0199US7902679B2Structure and manufacturing method of a chip scale package with low fabrication cost, fine pitch and high reliability solder bumpMEGICA CORP·Filed 2007·Granted Mar 8, 2011·111 cites·20 claims
- 0298US6649509B1Post passivation metal scheme for high-performance integrated circuit devicesMEGIC CORP·Filed 2001·Granted Nov 18, 2003·156 cites·110 claims
- 0398US6605528B1Post passivation metal scheme for high-performance integrated circuit devicesMEGIC CORP·Filed 2001·Granted Aug 12, 2003·151 cites·69 claims
- 0497US6917119B2Low fabrication cost, high performance, high reliability chip scale packageMEGIC CORP·Filed 2003·Granted Jul 12, 2005·106 cites·10 claims
- 0597US6642136B1Method of making a low fabrication cost, high performance, high reliability chip scale packageMEGIC CORP·Filed 2001·Granted Nov 4, 2003·123 cites·36 claims
- 0695US11987891B2Sensor in an internet-of-thingsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
- 0795US7176137B2Method for multiple spacer width controlTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 13, 2007·101 cites·20 claims
- 0893US7355288B2Low fabrication cost, high performance, high reliability chip scale packageMEGICA CORP·Filed 2005·Granted Apr 8, 2008·20 cites·26 claims
- 0993US7338890B2Low fabrication cost, high performance, high reliability chip scale packageMEGICA CORP·Filed 2005·Granted Mar 4, 2008·23 cites·25 claims
- 1093US6815324B2Reliable metal bumps on top of I/O pads after removal of test probe marksMEGIC CORP·Filed 2001·Granted Nov 9, 2004·70 cites·28 claims
- 1192US9653594B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·7 cites·20 claims
- 1291US11107899B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·2 cites·20 claims
- 1390US8158508B2Structure and manufacturing method of a chip scale packageLIN MOU-SHIUNG·Filed 2007·Granted Apr 17, 2012·13 cites·36 claims
- 1490US7253531B1Semiconductor bonding pad structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 7, 2007·23 cites·20 claims
- 1589US2025359085A1Reduced surface field layer in varactorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1688US10658482B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·3 cites·20 claims
- 1788US6335249B1Salicide field effect transistors with improved borderless contact structures and a method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 1, 2002·44 cites·20 claims
- 1887US2024271287A1Sensor in an internet-of-thingsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1986US11916115B2Field plate structure to enhance transistor breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·1 cites·20 claims
- 2086US11414763B2Manufacturing method of sensor in an internet-of-thingsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 16, 2022·1 cites·21 claims
- 2185US12464738B2Integrated chip including a device with a reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 2284US6710413B2Salicide field effect transistors with improved borderless contact structures and a method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 23, 2004·30 cites·5 claims
- 2383US9369175B2Low fabrication cost, high performance, high reliability chip scale packageLEE JIN-YUAN·Filed 2007·Granted Jun 14, 2016·9 cites·24 claims
- 2483US6943077B2Selective spacer layer deposition method for forming spacers with different widthsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 13, 2005·24 cites·21 claims
- 2581US11121225B2Field plate structure to enhance transistor breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·2 cites·20 claims
- 2681US10985256B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·1 cites·20 claims
- 2781US7465653B2Reliable metal bumps on top of I/O pads after removal of test probe marksMEGICA CORP·Filed 2004·Granted Dec 16, 2008·22 cites·19 claims
- 2879US12302620B2Field plate structure to enhance transistor breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2979US10508345B2Sensor in an internet-of-things and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 17, 2019·1 cites·20 claims
- 3079US2025343152A1Semiconductor device structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3178US9252019B2Semiconductor device and method for forming the sameTSAI WEN-CHI·Filed 2011·Granted Feb 2, 2016·5 cites·20 claims
- 3278US8481418B2Low fabrication cost, high performance, high reliability chip scale packageLEE JIN-YUAN·Filed 2007·Granted Jul 9, 2013·6 cites·42 claims
- 3377US2024321894A1Breakdown voltage capability of high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3476US12027526B2Breakdown voltage capability of high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3576US11923429B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 3674US2024379789A1Transistor device with recessed gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3773US11978810B2Method for forming an IC including a varactor with reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 3873US6746900B1Method for forming a semiconductor device having high-K gate dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 8, 2004·17 cites·25 claims
- 3972US9529956B2Active region design layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 27, 2016·3 cites·17 claims
- 4072US9343465B2Integrated circuit for high-voltage device protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 17, 2016·2 cites·20 claims
- 4172USRE43674EPost passivation metal scheme for high-performance integrated circuit devicesLIN MOU-SHIUNG·Filed 2006·Granted Sep 18, 2012·1 cites·119 claims
- 4272US8178967B2Low fabrication cost, high performance, high reliability chip scale packageLEE JIN-YUAN·Filed 2007·Granted May 15, 2012·3 cites·23 claims
- 4371US11011610B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 4471US10686047B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 4571US8053894B2Surface treatment of metal interconnect linesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 8, 2011·3 cites·24 claims
- 4670US12176407B2Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer withinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 4770US11538914B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 4869US11508757B2Breakdown voltage capability of high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·0 cites·20 claims
- 4968US8901733B2Reliable metal bumps on top of I/O pads after removal of test probe marksHUANG CHING-CHENG·Filed 2008·Granted Dec 2, 2014·4 cites·22 claims
- 5068US2023026676A1Semiconductor device structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →