Inventor · disambiguated record
Mitsuhiro Togo
Also filed as: TOGO MITSUHIRO
28 granted patents·7 pending applications·221 citations·filing 1997–2023
96Inventor score
Top patents by PatentIndex Score
35 records- 0198US9698241B1Integrated circuits with replacement metal gates and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·28 cites·16 claims
- 0295US9209186B1Threshold voltage control for mixed-type non-planar semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 8, 2015·20 cites·13 claims
- 0394US11575015B2High voltage field effect transistors with self-aligned silicide contacts and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Feb 7, 2023·3 cites·10 claims
- 0493US12015084B2Field effect transistors with gate fins and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 18, 2024·2 cites·20 claims
- 0593US11967626B2Field effect transistors with gate fins and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 23, 2024·2 cites·3 claims
- 0693US11450768B2High voltage field effect transistor with vertical current paths and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 20, 2022·3 cites·12 claims
- 0793US11322597B2Gate material-based capacitor and resistor structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 0892US11837640B2Transistors with stepped contact via structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 5, 2023·2 cites·2 claims
- 0992US9362284B2Threshold voltage control for mixed-type non-planar semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·7 cites·7 claims
- 1084US9202695B2Method for providing a gate metal layer of a transistor device and associated transistorIMEC·Filed 2014·Granted Dec 1, 2015·7 cites·13 claims
- 1182US6459126B1Semiconductor device including a MIS transistorNEC CORP·Filed 2001·Granted Oct 1, 2002·33 cites·17 claims
- 1275US9508602B2Temperature-controlled implanting of a diffusion-suppressing dopant in a semiconductor structureGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 29, 2016·2 cites·12 claims
- 1374US9419103B2Stress modulation in field effect transistors in reducing contact resistance and increasing charge carrier mobilityGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·2 cites·13 claims
- 1473US9679990B2Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 13, 2017·2 cites·13 claims
- 1569US7355256B2MOS Devices with different gate lengths and different gate polysilicon grain sizesNEC ELECTRONICS CORP·Filed 2006·Granted Apr 8, 2008·4 cites·9 claims
- 1669US6300211B1Highly reliable trench capacitor type memory cellNEC CORP·Filed 2000·Granted Oct 9, 2001·10 cites·8 claims
- 1764US7442632B2Semiconductor device n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain sizeNEC ELECTRONICS CORP·Filed 2006·Granted Oct 28, 2008·2 cites·5 claims
- 1863US6249017B1Highly reliable trench capacitor type memory cellNEC CORP·Filed 1998·Granted Jun 19, 2001·17 cites·4 claims
- 1963US6124176AMethod of producing a semiconductor device with reduced fringe capacitance and short channel effectNEC CORP·Filed 1999·Granted Sep 26, 2000·19 cites·16 claims
- 2062US6051861ASemiconductor device with reduced fringe capacitance and short channel effectNEC CORP·Filed 1997·Granted Apr 18, 2000·18 cites·6 claims
- 2159US6063694AField-effect transistor with a trench isolation structure and a method for manufacturing the sameNEC CORP·Filed 1998·Granted May 16, 2000·24 cites·6 claims
- 2259US2023389317A1Three-dimensional memory device including a metal oxide etch stop layer and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2353US6585594B2Storage medium storing display control program, entertainment apparatus, and display control programSONY COMPUTER ENTERTAINMENT INC·Filed 2001·Granted Jul 1, 2003·7 cites·8 claims
- 2450US12356704B2Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 8, 2025·0 cites·2 claims
- 2550US12279445B2Field effect transistors with gate fins and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 15, 2025·0 cites·2 claims
- 2650US2008290392A1Semiconductor device having n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain sizeNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 2749US2017222054A1Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabricationGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 2848US11626397B2Gate material-based capacitor and resistor structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
- 2947US11978774B2High voltage field effect transistor with vertical current paths and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 7, 2024·0 cites·20 claims
- 3039US10325824B2Methods, apparatus and system for threshold voltage control in FinFET devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 18, 2019·0 cites·10 claims
- 3139US2002082078A1Storage medium storing display control program, entertainment apparatus, and display control programFiled 2001·Application pending·0 cites
- 3239US2002075275A1Storage medium storing display control program, entertainment apparatus, and display control programFiled 2001·Application pending·0 cites
- 3338US2008038851A1Pattern for evaluating electric characteristics, method for evaluating electric characteristics, method for manufacturing semiconductor device and method for providing reliability assuranceNEC ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 3435US6159809AMethod for manufacturing surface channel type P-channel MOS transistor while suppressing P-type impurity penetrationNEC CORP·Filed 1997·Granted Dec 12, 2000·4 cites·3 claims
- 3533US2016351675A1Integrated circuits and methods for fabricating integrated circuits having replacement metal gate electrodesGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →