Inventor · disambiguated record
Michael J. Zierak
Also filed as: ZIERAK MICHAEL · ZIERAK MICHAEL J · ZIERAK MICHAEL JOSEPH
54 granted patents·11 pending applications·221 citations·filing 2001–2024
98Inventor score
Files withIBM26GLOBALFOUNDRIES US INC20GLOBALFOUNDRIES INC7ANDERSON FREDERICK G2BREITWISCH MATTHEW J2
Top patents by PatentIndex Score
65 records- 0195US10388728B1Structures with an airgap and methods of forming such structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·13 cites·12 claims
- 0294US12028053B2Structure including resistor network for back biasing FET stackGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 2, 2024·2 cites·18 claims
- 0394US11972999B2Unlanded thermal dissipation pillar adjacent active contactGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 30, 2024·2 cites·20 claims
- 0494US7829945B2Lateral diffusion field effect transistor with asymmetric gate dielectric profileIBM·Filed 2007·Granted Nov 9, 2010·31 cites·12 claims
- 0592US7781292B2High power device isolation and integrationIBM·Filed 2007·Granted Aug 24, 2010·22 cites·20 claims
- 0691US8492866B1Isolated Zener diodeANDERSON FREDERICK G·Filed 2012·Granted Jul 23, 2013·15 cites·23 claims
- 0790US10050115B2Tapered gate oxide in LDMOS devicesIBM·Filed 2014·Granted Aug 14, 2018·11 cites·10 claims
- 0890US7943445B2Asymmetric junction field effect transistorIBM·Filed 2009·Granted May 17, 2011·16 cites·10 claims
- 0989US7825441B2Junction field effect transistor with a hyperabrupt junctionIBM·Filed 2007·Granted Nov 2, 2010·16 cites·35 claims
- 1087US7956412B2Lateral diffusion field effect transistor with a trench field plateIBM·Filed 2007·Granted Jun 7, 2011·14 cites·14 claims
- 1186US8168500B2Double gate depletion mode MOSFETCAMPI JOHN B·Filed 2011·Granted May 1, 2012·8 cites·20 claims
- 1285US9799652B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 24, 2017·3 cites·20 claims
- 1383US9893157B1Structures with contact trenches and isolation trenchesGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 13, 2018·4 cites·20 claims
- 1482US8169007B2Asymmetric junction field effect transistorANDERSON FREDERICK G·Filed 2011·Granted May 1, 2012·6 cites·15 claims
- 1581US8193563B2High power device isolation and integrationGAMBINO JEFFREY PETER·Filed 2010·Granted Jun 5, 2012·6 cites·22 claims
- 1679US9768028B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 19, 2017·2 cites·19 claims
- 1778US8466501B2Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFETHERSHBERGER DOUGLAS B·Filed 2010·Granted Jun 18, 2013·8 cites·19 claims
- 1878US7977714B2Wrapped gate junction field effect transistorIBM·Filed 2007·Granted Jul 12, 2011·7 cites·14 claims
- 1976US9721948B1Switch improvement using layout optimizationGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·3 cites·16 claims
- 2073US9236449B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jan 12, 2016·3 cites·18 claims
- 2173US9059276B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jun 16, 2015·3 cites·19 claims
- 2272US12183814B1Multi-channel transistorGLOBALFOUNDRIES US INC·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
- 2370US11616127B2Symmetric arrangement of field plates in semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 28, 2023·0 cites·20 claims
- 2469US10062711B2Wafers and device structures with body contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 28, 2018·1 cites·19 claims
- 2568US12154956B1Structure including multi-level field plate and method of forming the structureGLOBALFOUNDRIES US INC·Filed 2024·Granted Nov 26, 2024·0 cites·16 claims
- 2668US11664412B2Structure providing poly-resistor under shallow trench isolation and above high resistivity polysilicon layerGLOBALFOUNDRIES US INC·Filed 2021·Granted May 30, 2023·0 cites·15 claims
- 2767US9383404B2High resistivity substrate final resistance test structureIBM·Filed 2014·Granted Jul 5, 2016·1 cites·20 claims
- 2867US7886240B2Modifying layout of IC based on function of interconnect and related circuit and design structureIBM·Filed 2008·Granted Feb 8, 2011·3 cites·17 claims
- 2965US11316019B2Symmetric arrangement of field plates in semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 3065US7473643B2Dendrite growth control circuitIBM·Filed 2006·Granted Jan 6, 2009·2 cites·18 claims
- 3164US12417975B2Electrically programmable fuse over crystalline semiconductor materialsGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 3264US12416530B2Temperature detection using negative temperature coefficient resistor in GaN settingGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 16, 2025·0 cites·21 claims
- 3363US7326987B2Non-continuous encapsulation layer for MIM capacitorIBM·Filed 2005·Granted Feb 5, 2008·2 cites·14 claims
- 3462US12278178B2Fuse element for process-induced damage protection structureGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 3562US8114750B2Lateral diffusion field effect transistor with drain region self-aligned to gate electrodeFEILCHENFELD NATALIE B·Filed 2008·Granted Feb 14, 2012·1 cites·12 claims
- 3658US2025142860A1High electron mobility transistor with regrown barrier structureGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3757US11637173B2Structure including polycrystalline resistor with dopant-including polycrystalline region thereunderGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 25, 2023·0 cites·18 claims
- 3857US8278197B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2008·Granted Oct 2, 2012·0 cites·14 claims
- 3957US2025120155A1High-electron-mobility transistorGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 4057US2025040221A1High-electron-mobility transistorGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 4157US2025089284A1Structure and method to provide dielectric layer having plurality of recesses with different depthsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 4256US6975015B2Modulated trigger deviceIBM·Filed 2003·Granted Dec 13, 2005·5 cites·9 claims
- 4354US11545549B2Semiconductor structures with body contact regions embedded in polycrystalline semiconductor materialGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 4454US8716759B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2012·Granted May 6, 2014·0 cites·11 claims
- 4554US8227318B2Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formationLEVY MAX·Filed 2009·Granted Jul 24, 2012·1 cites·10 claims
- 4654US7902606B2Double gate depletion mode MOSFETIBM·Filed 2008·Granted Mar 8, 2011·0 cites·12 claims
- 4754US7807562B2Dendrite growth control circuitIBM·Filed 2008·Granted Oct 5, 2010·0 cites·20 claims
- 4854US2024194680A1Bidirectional deviceGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 4954US2013295742A1Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceIBM·Filed 2013·Application pending·0 cites
- 5053US2024128328A1Device with field platesGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →