Inventor · disambiguated record
Naohiro Hosoda
Also filed as: HOSODA NAOHIRO
23 granted patents·12 pending applications·317 citations·filing 2005–2025
95Inventor score
Files withSANDISK TECHNOLOGIES LLC19SANDISK TECHNOLOGIES INC5HOSODA NAOHIRO4RENESAS TECH CORP4KURARAY CO1
Top patents by PatentIndex Score
35 records- 0198US10115730B1Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·40 cites·18 claims
- 0297US11011506B2Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 18, 2021·9 cites·12 claims
- 0397US10903237B1Three-dimensional memory device including stepped connection plates and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 26, 2021·44 cites·20 claims
- 0497US10665580B1Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·104 cites·20 claims
- 0597US9978766B1Three-dimensional memory device with electrically isolated support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 22, 2018·45 cites·26 claims
- 0696US11417621B2Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 16, 2022·6 cites·15 claims
- 0796US11367733B1Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
- 0895US10453798B2Three-dimensional memory device with gated contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 22, 2019·15 cites·13 claims
- 0993US11018152B2Method for etching bottom punch-through opening in a memory film of a multi-tier three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 25, 2021·13 cites·19 claims
- 1092US11894298B2Three-dimensional memory device containing amorphous and crystalline blocking dielectric layersSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
- 1186US10347647B1Three-dimensional memory device containing multi-threshold-voltage drain select gates and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 9, 2019·6 cites·11 claims
- 1285US7282411B2Method of manufacturing a nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted Oct 16, 2007·13 cites·17 claims
- 1384US11289416B2Three-dimensional memory device containing amorphous and crystalline blocking dielectric layersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 29, 2022·4 cites·20 claims
- 1476US9825049B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 21, 2017·2 cites·9 claims
- 1576US2025386503A1Three-dimensional memory device with through-stack contact via structures and methods for forming the sameSANDISK TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 1671US9245900B2Semiconductor device and manufacturing method of semiconductor deviceHOSODA NAOHIRO·Filed 2012·Granted Jan 26, 2016·3 cites·11 claims
- 1768US2025322852A1Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the sameSANDISK TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 1867US7303951B2Method of manufacturing a trench isolation region in a semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Dec 4, 2007·5 cites·21 claims
- 1966US7419869B2Semiconductor device and a method for manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Sep 2, 2008·2 cites·13 claims
- 2063US12387789B2X-direction divided sub-block mode in NANDSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Aug 12, 2025·0 cites·17 claims
- 2161US12354944B2Three-dimensional memory device containing plural metal oxide blocking dielectric layers and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2022·Granted Jul 8, 2025·0 cites·10 claims
- 2261US2024363165A1Three-dimensional memory device including a mid-stack source layer and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2360US2024260266A1Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2459US12476192B2Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 2559US12437817B2Sub-block separation in NAND memory through word line based selectorsSANDISK TECHNOLOGIES INC·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 2659US2024260267A1Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2758US2024213147A1Three-dimensional memory device with self-aligned memory block isolation and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2858US2024179906A1Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openingsSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2954US12456521B2Sub-block separation in NAND memory through word line based selectorsSANDISK TECHNOLOGIES INC·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 3050US9340352B2Water-soluble film roll and method for paying out water-soluble filmHOSODA NAOHIRO·Filed 2012·Granted May 17, 2016·0 cites·21 claims
- 3148US2008233728A1Semiconductor device and a method for manufacturing the sameHOSODA NAOHIRO·Filed 2008·Application pending·0 cites
- 3247US2008293230A1Method of manufacturing a semiconductor deviceHOSODA NAOHIRO·Filed 2008·Application pending·0 cites
- 3344US2005151259A1Semiconductor device and manufacturing method thereofFiled 2005·Application pending·0 cites
- 3443US2008226919A1Water-Soluble Film Roll and Method for Paying Out Water-Soluble FilmKURARAY CO·Filed 2005·Application pending·0 cites
- 3534US2006001081A1Nonvolatile semiconductor memory device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →