Inventor · disambiguated record
Naveen Tipirneni
Also filed as: TIPIRNENI NAVEEN
32 granted patents·6 pending applications·125 citations·filing 2008–2024
96Inventor score
Top patents by PatentIndex Score
38 records- 0197US8759879B1RESURF III-nitride HEMTsTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 24, 2014·42 cites·20 claims
- 0294US9685545B2Isolated III-N semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 20, 2017·11 cites·19 claims
- 0393US9882041B1HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 30, 2018·8 cites·8 claims
- 0489US9054027B2III-nitride device and method having a gate isolating structureTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 9, 2015·9 cites·20 claims
- 0588US9741557B1Silicon nitride process for reduction of threshold shiftTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 22, 2017·6 cites·16 claims
- 0688US8829613B1Stepped dielectric for field plate formationTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 9, 2014·6 cites·9 claims
- 0787US8318562B2Method to increase breakdown voltage of semiconductor devicesKHAN M ASIF·Filed 2008·Granted Nov 27, 2012·13 cites·17 claims
- 0884US9379022B2Process for forming driver for normally on III-nitride transistors to get normally-off functionalityTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 28, 2016·3 cites·10 claims
- 0983US9842911B2Adaptive charge balanced edge terminationTIPIRNENI NAVEEN·Filed 2012·Granted Dec 12, 2017·6 cites·20 claims
- 1082US8933461B2III-nitride enhancement mode transistors with tunable and high gate-source voltage ratingTEXAS INSTRUMENTS INC·Filed 2013·Granted Jan 13, 2015·6 cites·20 claims
- 1180US10680093B2HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 1279US9853140B2Adaptive charge balanced MOSFET techniquesVISHAY SILICONIX·Filed 2012·Granted Dec 26, 2017·4 cites·14 claims
- 1379US9508596B2Processes used in fabricating a metal-insulator-semiconductor field effect transistorVISHAY SILICONIX·Filed 2014·Granted Nov 29, 2016·5 cites·18 claims
- 1477US9553151B2III-nitride device and method having a gate isolating structureTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 24, 2017·2 cites·20 claims
- 1574US11011515B2Normally off III nitride transistorTEXAS INSTRUMENTS INC·Filed 2018·Granted May 18, 2021·1 cites·16 claims
- 1674US10229988B2Adaptive charge balanced edge terminationVISHAY SILICONIX·Filed 2017·Granted Mar 12, 2019·1 cites·20 claims
- 1774US2024429233A1Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitorTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1869US12046666B2Gallium nitride (GaN) based transistor with multiple p-GaN blocksTEXAS INSTRUMENTS INC·Filed 2021·Granted Jul 23, 2024·0 cites·27 claims
- 1969US11177378B2HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2020·Granted Nov 16, 2021·0 cites·20 claims
- 2065US2021242200A1Normally off iii nitride transistorTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 2164US12113062B2Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitorTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 8, 2024·0 cites·20 claims
- 2259US11049960B2Gallium nitride (GaN) based transistor with multiple p-GaN blocksTEXAS INSTRUMENTS INC·Filed 2019·Granted Jun 29, 2021·0 cites·16 claims
- 2359US9865722B2Avalanche energy handling capable III-nitride transistorsTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 9, 2018·0 cites·21 claims
- 2459US9054071B2Method to form stepped dielectric for field plate formationTEXAS INSTRUMENTS INC·Filed 2014·Granted Jun 9, 2015·0 cites·10 claims
- 2558US10707324B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 7, 2020·0 cites·21 claims
- 2658US9559093B2Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping componentTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 31, 2017·0 cites·10 claims
- 2755US9356117B2Method for forming avalanche energy handling capable III-nitride transistorsTEXAS INSTRUMENTS INC·Filed 2015·Granted May 31, 2016·0 cites·10 claims
- 2855US9035318B2Avalanche energy handling capable III-nitride transistorsTEXAS INSTRUMENTS INC·Filed 2013·Granted May 19, 2015·0 cites·10 claims
- 2954US9543944B2Driver for normally on III-nitride transistors to get normally-off functionalityTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 10, 2017·0 cites·7 claims
- 3054US9093301B2Driver for normally on III-nitride transistors to get normally-off functionalityTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 28, 2015·0 cites·9 claims
- 3153US10381456B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 13, 2019·0 cites·20 claims
- 3253US9196692B2Method to form stepped dielectric for field plate formationTEXAS INSTRUMENTS INC·Filed 2015·Granted Nov 24, 2015·0 cites·16 claims
- 3349US2017250272A1Isolated iii-n semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2017·Application pending·0 cites
- 3449US2016293596A1Normally off iii-nitride transistorTEXAS INSTRUMENTS INC·Filed 2015·Application pending·0 cites
- 3544US9396948B2Layer transfer of silicon onto III-nitride material for heterogenous integrationTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 19, 2016·0 cites·13 claims
- 3643US2014374766A1Bi-directional gallium nitride switch with self-managed substrate biasTEXAS INSTRUMENTS INC·Filed 2013·Application pending·0 cites
- 3737US2013062614A1Group iii-v enhancement mode transistor with thyristor gateTIPIRNENI NAVEEN·Filed 2012·Application pending·0 cites
- 3833US10026835B2Field boosted metal-oxide-semiconductor field effect transistorTIPIRNENI NAVEEN·Filed 2010·Granted Jul 17, 2018·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Naveen Tipirneni files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →