Inventor · disambiguated record
Nobuo Matsuki
Also filed as: MATSUKI NOBUO
40 granted patents·21 pending applications·6,613 citations·filing 1998–2025
98Inventor score
Files withASM JAPAN38TOKYO ELECTRON LTD14SEKISUI CHEMICAL CO LTD4UNIV KYUSHU NAT UNIV CORP2CANON ANELVA CORP1
Top patents by PatentIndex Score
61 records- 0199US8003174B2Method for forming dielectric film using siloxane-silazane mixtureASM JAPAN·Filed 2007·Granted Aug 23, 2011·521 cites·14 claims
- 0299US7622369B1Device isolation technology on semiconductor substrateASM JAPAN·Filed 2008·Granted Nov 24, 2009·604 cites·16 claims
- 0399US6455445B2Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 2001·Granted Sep 24, 2002·645 cites·18 claims
- 0499US6410463B1Method for forming film with low dielectric constant on semiconductor substrateASM JAPAN·Filed 2000·Granted Jun 25, 2002·615 cites·10 claims
- 0598US7781352B2Method for forming inorganic silazane-based dielectric filmASM JAPAN·Filed 2007·Granted Aug 24, 2010·480 cites·14 claims
- 0698US7651959B2Method for forming silazane-based dielectric filmASM JAPAN·Filed 2007·Granted Jan 26, 2010·589 cites·25 claims
- 0798US7354873B2Method for forming insulation filmASM JAPAN·Filed 2006·Granted Apr 8, 2008·479 cites·40 claims
- 0897US6559520B2Siloxan polymer film on semiconductor substrateASM JAPAN·Filed 2002·Granted May 6, 2003·87 cites·3 claims
- 0997US6383955B1Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 1999·Granted May 7, 2002·857 cites·13 claims
- 1097US6352945B1Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 1999·Granted Mar 5, 2002·718 cites·12 claims
- 1196US7504344B2Method of forming a carbon polymer film using plasma CVDASM JAPAN·Filed 2005·Granted Mar 17, 2009·419 cites·31 claims
- 1296US6432846B1Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 2000·Granted Aug 13, 2002·125 cites·6 claims
- 1395US6631692B1Plasma CVD film-forming deviceASM JAPAN·Filed 2000·Granted Oct 14, 2003·73 cites·13 claims
- 1494US6881683B2Insulation film on semiconductor substrate and method for forming sameASM JAPAN·Filed 2002·Granted Apr 19, 2005·51 cites·28 claims
- 1593US7064088B2Method for forming low-k hard filmASM JAPAN·Filed 2003·Granted Jun 20, 2006·62 cites·31 claims
- 1693US6514880B2Siloxan polymer film on semiconductor substrate and method for forming sameASM JAPAN·Filed 2001·Granted Feb 4, 2003·63 cites·11 claims
- 1791US6740367B2Plasma CVD film-forming deviceASM JAPAN·Filed 2002·Granted May 25, 2004·34 cites·6 claims
- 1887US11491768B2Intermediate film for laminated glass, and laminated glassSEKISUI CHEMICAL CO LTD·Filed 2019·Granted Nov 8, 2022·2 cites·13 claims
- 1987US6784123B2Insulation film on semiconductor substrate and method for forming sameASM JAPAN·Filed 2003·Granted Aug 31, 2004·28 cites·19 claims
- 2086US6537928B1Apparatus and method for forming low dielectric constant filmASM JAPAN·Filed 2002·Granted Mar 25, 2003·33 cites·14 claims
- 2185US8080282B2Method for forming silicon carbide film containing oxygenFUKAZAWA ATSUKI·Filed 2006·Granted Dec 20, 2011·6 cites·9 claims
- 2283US6830007B2Apparatus and method for forming low dielectric constant filmASM JAPAN·Filed 2002·Granted Dec 14, 2004·26 cites·15 claims
- 2380US6852650B2Insulation film on semiconductor substrate and method for forming sameASM JAPAN·Filed 2002·Granted Feb 8, 2005·19 cites·20 claims
- 2478US7410915B2Method of forming carbon polymer film using plasma CVDASM JAPAN·Filed 2006·Granted Aug 12, 2008·6 cites·40 claims
- 2577US2025075316A1Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2676US7718553B2Method for forming insulation film having high densityASM JAPAN·Filed 2006·Granted May 18, 2010·2 cites·22 claims
- 2776US6602800B2Apparatus for forming thin film on semiconductor substrate by plasma reactionASM JAPAN·Filed 2001·Granted Aug 5, 2003·16 cites·6 claims
- 2874US10738380B2Deposition apparatusCANON ANELVA CORP·Filed 2017·Granted Aug 11, 2020·2 cites·17 claims
- 2970US6653719B2Silicone polymer insulation film on semiconductor substrateASM JAPAN·Filed 2002·Granted Nov 25, 2003·7 cites·6 claims
- 3068US7655577B2Method of forming silicon-containing insulation film having low dielectric constant and low film stressASM JAPAN·Filed 2006·Granted Feb 2, 2010·2 cites·11 claims
- 3168US7470633B2Method of forming a carbon polymer film using plasma CVDASM JAPAN·Filed 2006·Granted Dec 30, 2008·3 cites·15 claims
- 3265US12241155B2Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2020·Granted Mar 4, 2025·0 cites·11 claims
- 3365US2025389018A1Silicon carbonitride film-forming method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3462US7638441B2Method of forming a carbon polymer film using plasma CVDASM JAPAN·Filed 2007·Granted Dec 29, 2009·1 cites·11 claims
- 3561US2025144667A1Substrate-processing methodTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3659US2024014013A1Plasma processing apparatus and plasma processing methodTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 3759US2025279266A1Method of removing organometallic polymer film, plasma processing method, and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3858US11850827B2Interlayer film for laminated glass and laminated glassSEKISUI CHEMICAL CO LTD·Filed 2019·Granted Dec 26, 2023·0 cites·7 claims
- 3958US7147900B2Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiationASM JAPAN·Filed 2003·Granted Dec 12, 2006·6 cites·36 claims
- 4058US2024085793A1Method of forming a moisture barrier on photosensitive organometallic oxidesTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 4158US2024045332A1Method of forming photosensitive organometallic oxides by chemical vapor polymerizationTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 4257US2022009205A1Interlayer for laminated glass and laminated glassSEKISUI CHEMICAL CO LTD·Filed 2019·Application pending·0 cites
- 4355US7012268B2Gas-shield electron-beam gun for thin-film curing applicationASM JAPAN·Filed 2004·Granted Mar 14, 2006·2 cites·23 claims
- 4455US2024321571A1Insulating film forming method and substrate processing systemTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 4555US2008299326A1Plasma cvd apparatus having non-metal susceptorASM JAPAN·Filed 2007·Application pending·0 cites
- 4654US7560144B2Method of stabilizing film quality of low-dielectric constant filmASM JAPAN·Filed 2005·Granted Jul 14, 2009·1 cites·18 claims
- 4754US6759344B2Method for forming low dielectric constant interlayer insulation filmASM JAPAN·Filed 2002·Granted Jul 6, 2004·4 cites·25 claims
- 4854US2025166990A1Method for forming insulating film, and substrate processing systemTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 4954US2025207247A1Methods that utilize photosensitive organometallic oxides formed by chemical vapor polymerizationTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 5053US7148154B2Method of forming silicon-containing insulation film having low dielectric constant and low film stressASM JAPAN·Filed 2003·Granted Dec 12, 2006·3 cites·14 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →