Inventor · disambiguated record
Olov Karlsson
Also filed as: KARLSSON OLOV · KARLSSON OLOV B
51 granted patents·3 pending applications·1,366 citations·filing 1997–2015
99Inventor score
Top patents by PatentIndex Score
54 records- 0198US6657276B1Shallow trench isolation (STI) region with high-K liner and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·198 cites·10 claims
- 0297US6528858B1MOSFETs with differing gate dielectrics and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·162 cites·31 claims
- 0393US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 0492US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 0590US6037671AStepper alignment mark structure for maintaining alignment integrityADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 14, 2000·107 cites·21 claims
- 0688US6867130B1Enhanced silicidation of polysilicon gate electrodesADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 15, 2005·45 cites·6 claims
- 0787US6657267B1Semiconductor device and fabrication technique using a high-K liner for spacer etch stopADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·41 cites·12 claims
- 0886US8518765B1Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residuesDUONG ANH·Filed 2012·Granted Aug 27, 2013·5 cites·18 claims
- 0985US5930645AShallow trench isolation formation with reduced polish stop thicknessADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·87 cites·17 claims
- 1084US6239031B1Stepper alignment mark structure for maintaining alignment integrityADVANCED MICRO DEVICES INC·Filed 2000·Granted May 29, 2001·39 cites·3 claims
- 1183US7326317B2Lignocellulose productWESTERMARK ULLA·Filed 2002·Granted Feb 5, 2008·37 cites·18 claims
- 1282US6171962B1Shallow trench isolation formation without planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 9, 2001·68 cites·11 claims
- 1379US9196475B2Methods for fabricating integrated circuits including fluorine incorporationGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 24, 2015·4 cites·18 claims
- 1477US8735302B2High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extractionJOSHI AMOL·Filed 2012·Granted May 27, 2014·4 cites·20 claims
- 1577US6660578B1High-K dielectric having barrier layer for P-doped devices and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 9, 2003·23 cites·7 claims
- 1675US6121123AGate pattern formation using a BARC as a hardmaskADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 19, 2000·45 cites·14 claims
- 1774US6984569B2Shallow trench isolation (STI) region with high-K liner and method of formationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 10, 2006·17 cites·10 claims
- 1874US5963841AGate pattern formation using a bottom anti-reflective coatingADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 5, 1999·45 cites·18 claims
- 1973US8853081B2High dose ion-implanted photoresist removal using organic solvent and transition metal mixturesINTERMOLECULAR INC·Filed 2012·Granted Oct 7, 2014·3 cites·20 claims
- 2073US5990524ASilicon oxime spacer for preventing over-etching during local interconnect formationADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 23, 1999·40 cites·20 claims
- 2172US8635727B2Variable-size bedDAHLIN JOHAN·Filed 2008·Granted Jan 28, 2014·20 cites·23 claims
- 2271US6143624AShallow trench isolation formation with spacer-assisted ion implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 7, 2000·42 cites·24 claims
- 2369US6306710B1Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacerADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 23, 2001·16 cites·13 claims
- 2468US6074927AShallow trench isolation formation with trench wall spacerADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·37 cites·17 claims
- 2568US5879975AHeat treating nitrogen implanted gate electrode layer for improved gate electrode etch profileADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 9, 1999·33 cites·14 claims
- 2665US6066567AMethods for in-situ removal of an anti-reflective coating during an oxide resistor protect etching processADVANCED MICRO DEVICES INC·Filed 1997·Granted May 23, 2000·29 cites·20 claims
- 2764US8513117B2Process to remove Ni and Pt residues for NiPtSi applicationsDUONG ANH·Filed 2011·Granted Aug 20, 2013·2 cites·20 claims
- 2864US8409952B2Method of forming an electronic device including forming a charge storage element in a trench of a workpiecePARIKH SUKETU ARUN·Filed 2008·Granted Apr 2, 2013·2 cites·19 claims
- 2964US6599810B1Shallow trench isolation formation with ion implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 29, 2003·29 cites·21 claims
- 3061US9399753B2Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residuesINTERMOLECULAR INC·Filed 2014·Granted Jul 26, 2016·0 cites·13 claims
- 3159US8946015B2Aqua regia and hydrogen peroxide HCI combination to remove Ni and NiPt residuesINTERMOLECULAR INC·Filed 2014·Granted Feb 3, 2015·0 cites·20 claims
- 3259US8854067B2Circular transmission line methods compatible with combinatorial processing of semiconductorsJOSHI AMOL·Filed 2012·Granted Oct 7, 2014·1 cites·12 claims
- 3359US6380047B1Shallow trench isolation formation with two source/drain masks and simplified planarization maskADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·9 cites·17 claims
- 3459US6124183AShallow trench isolation formation with simplified reverse planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 26, 2000·25 cites·13 claims
- 3558US8809140B2Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residuesINTERMOLECULAR INC·Filed 2013·Granted Aug 19, 2014·0 cites·19 claims
- 3657US6130467AShallow trench isolation with spacers for improved gate oxide qualityADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 10, 2000·23 cites·2 claims
- 3755US6894355B1Semiconductor device with silicide source/drain and high-K dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted May 17, 2005·6 cites·10 claims
- 3854US6380588B1Semiconductor device having uniform spacersADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·4 cites·3 claims
- 3953US8859431B2Process to remove Ni and Pt residues for NiPtSi application using chlorine gasINTERMOLECULAR INC·Filed 2013·Granted Oct 14, 2014·0 cites·20 claims
- 4053US5970363AShallow trench isolation formation with improved trench edge oxideADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·19 cites·30 claims
- 4153US2014262749A1Methods of Plasma Surface Treatment in a PVD ChamberINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4251US5970362ASimplified shallow trench isolation formation with no polish stopADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·17 cites·14 claims
- 4350US6103611AMethods and arrangements for improved spacer formation within a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 15, 2000·13 cites·15 claims
- 4449US8466058B2Process to remove Ni and Pt residues for NiPtSi applications using chlorine gasDUONG ANH·Filed 2011·Granted Jun 18, 2013·0 cites·17 claims
- 4548US6087271AMethods for removal of an anti-reflective coating following a resist protect etching processADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 11, 2000·14 cites·12 claims
- 4648US6027959AMethods for in-situ removal of an anti-reflective coating during a nitride resistor protect etching processADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 22, 2000·14 cites·15 claims
- 4747US8784572B2Method for cleaning platinum residues on a semiconductor substrateDUONG ANH·Filed 2011·Granted Jul 22, 2014·0 cites·11 claims
- 4846US2013125923A1Method for cleaning platinum residues on a semiconductor substrateINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4944US9059156B2Method of forming an erbium silicide metal gate stack FinFET device via a physical vapor deposition nanolaminate approachINTERMOLECULAR INC·Filed 2013·Granted Jun 16, 2015·0 cites·20 claims
- 5042US8697573B2Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heatingDUONG ANH·Filed 2011·Granted Apr 15, 2014·0 cites·11 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →