Inventor · disambiguated record
Paul Rudeck
Also filed as: RUDECK PAUL · RUDECK PAUL J
46 granted patents·6 pending applications·873 citations·filing 1988–2012
99Inventor score
Top patents by PatentIndex Score
52 records- 0195US6849501B2Methods for fabricating an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 1, 2005·60 cites·24 claims
- 0294US7212435B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2004·Granted May 1, 2007·68 cites·16 claims
- 0394US6384447B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted May 7, 2002·55 cites·25 claims
- 0494US6272047B1Flash memory cellMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 7, 2001·72 cites·22 claims
- 0593US7272039B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 18, 2007·27 cites·14 claims
- 0692US6449189B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 10, 2002·41 cites·27 claims
- 0791US6680508B1Vertical floating gate transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 20, 2004·45 cites·7 claims
- 0891US6445619B1Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 3, 2002·38 cites·28 claims
- 0989US4893163AAlignment mark system for electron beam/optical mixed lithographyIBM·Filed 1988·Granted Jan 9, 1990·76 cites·4 claims
- 1088US6657250B1Vertical flash memory cell with buried source railMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 2, 2003·37 cites·15 claims
- 1187US6798699B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 28, 2004·37 cites·38 claims
- 1286US7257024B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 14, 2007·14 cites·17 claims
- 1386US6563741B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2001·Granted May 13, 2003·34 cites·36 claims
- 1483US6461915B1Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 8, 2002·34 cites·31 claims
- 1580US6762093B2High coupling floating gate transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 13, 2004·20 cites·6 claims
- 1680US6713350B2Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stackMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 30, 2004·18 cites·42 claims
- 1778US7932557B2Semiconductor contact deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 26, 2011·6 cites·31 claims
- 1872US6881628B2Vertical flash memory cell with buried source railMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 19, 2005·14 cites·6 claims
- 1971US6297092B1Method and structure for an oxide layer overlaying an oxidation-resistant layerMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 2, 2001·23 cites·23 claims
- 2070US7294549B2Vertical floating gate transistorMICRON TECHNOLOGY INC·Filed 2005·Granted Nov 13, 2007·3 cites·20 claims
- 2170US7148547B2Semiconductor contact deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 12, 2006·12 cites·27 claims
- 2270US6916707B2High coupling floating gate transistorMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 12, 2005·11 cites·17 claims
- 2369US6756268B2Modified source/drain re-oxidation method and systemMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 29, 2004·8 cites·35 claims
- 2469US6587376B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 1, 2003·9 cites·33 claims
- 2568US6921696B2Vertical floating gate transistorMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 26, 2005·10 cites·9 claims
- 2668US6774431B2High coupling floating gate transistorMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 10, 2004·10 cites·17 claims
- 2767US7015098B2Methods and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 21, 2006·7 cites·28 claims
- 2867US6803624B2Programmable memory devices supported by semiconductive substratesMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 12, 2004·9 cites·114 claims
- 2966US7420240B2Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stackMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 2, 2008·8 cites·16 claims
- 3066US7294567B2Semiconductor contact device and methodMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 13, 2007·10 cites·44 claims
- 3166US7115458B2Gate coupling in floating-gate memory cellsMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 3, 2006·10 cites·25 claims
- 3264US6434045B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 13, 2002·7 cites·27 claims
- 3362US6611019B2Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 26, 2003·6 cites·28 claims
- 3460US6777291B2Methods of forming programmable memory devices comprising tungstenMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 17, 2004·6 cites·35 claims
- 3559US6577537B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 10, 2003·5 cites·50 claims
- 3658US7091549B2Programmable memory devices supported by semiconductor substratesMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 15, 2006·5 cites·17 claims
- 3758US6445620B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 3, 2002·5 cites·24 claims
- 3854US8304322B2Methods of filling isolation trenches for semiconductor devices and resulting structuresRUDECK PAUL J·Filed 2006·Granted Nov 6, 2012·1 cites·13 claims
- 3954US7015111B2Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 21, 2006·3 cites·15 claims
- 4053US6653683B2Method and structure for an oxide layer overlying an oxidation-resistant layerMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 25, 2003·4 cites·3 claims
- 4152US7429514B2Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 30, 2008·0 cites·20 claims
- 4251US6873005B2Programmable memory devices supported by semiconductor substratesMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 29, 2005·3 cites·16 claims
- 4350US6566195B2Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2002·Granted May 20, 2003·2 cites·32 claims
- 4447US2006267070A1Gate coupling in floating-gate memory cellsMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 4546US2005272203A1Modified source/drain re-oxidation method and systemRUDECK PAUL J·Filed 2005·Application pending·0 cites
- 4645US7037860B2Modified source/drain re-oxidation method and systemMICRON TECHNOLOGY INC·Filed 2004·Granted May 2, 2006·0 cites·32 claims
- 4743US7271435B2Modified source/drain re-oxidation method and systemMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 18, 2007·0 cites·12 claims
- 4843US2013009276A1Methods of filling isolation trenches for semiconductor devices and resulting structuresRUDECK PAUL J·Filed 2012·Application pending·0 cites
- 4941US2002096707A1Modified source/drain re-oxidation method and systemFiled 2001·Application pending·0 cites
- 5040US6608346B2Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 19, 2003·0 cites·23 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Paul Rudeck files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →