Inventor · disambiguated record
Peter Baars
Also filed as: BAARS PETER
107 granted patents·34 pending applications·404 citations·filing 2005–2025
99Inventor score
Files withGLOBALFOUNDRIES INC54BAARS PETER24GLOBALFOUNDRIES US INC18QIMONDA AG12INFINEON TECHNOLOGIES AG4
Top patents by PatentIndex Score
141 records- 0196US10157774B1Contact scheme for landing on different contact area levelsGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 18, 2018·17 cites·20 claims
- 0296US9673210B1Semiconductor structure including a nonvolatile memory cell having a charge trapping layer and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 6, 2017·18 cites·24 claims
- 0396US9608110B2Methods of forming a semiconductor circuit element and semiconductor circuit elementGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·16 cites·19 claims
- 0495US8735232B2Methods for forming semiconductor devicesBAARS PETER·Filed 2011·Granted May 27, 2014·21 cites·20 claims
- 0595US8647938B1SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabricationBAARS PETER·Filed 2012·Granted Feb 11, 2014·22 cites·18 claims
- 0695US8557666B2Methods for fabricating integrated circuitsWEI ANDY C·Filed 2011·Granted Oct 15, 2013·32 cites·18 claims
- 0794US9806170B1Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·12 cites·7 claims
- 0894US9634017B1Semiconductor structure including a nonvolatile memory cell and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 25, 2017·12 cites·15 claims
- 0994US9349842B2Methods of forming semiconductor devices comprising ferroelectric elements and fast high-K metal gate transistorsGLOBALFOUNDRIES INC·Filed 2013·Granted May 24, 2016·15 cites·35 claims
- 1093US9929148B1Semiconductor device including buried capacitive structures and a method of forming the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 27, 2018·8 cites·16 claims
- 1193US8722523B2Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structureSCHLOESSER TILL·Filed 2012·Granted May 13, 2014·16 cites·23 claims
- 1291US11888062B2Extended-drain metal-oxide-semiconductor devices with a silicon-germanium layer beneath a portion of the gateGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 30, 2024·3 cites·20 claims
- 1391US9634088B1Junction formation with reduced CEFF for 22NM FDSOI devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·7 cites·14 claims
- 1489US8357978B1Methods of forming semiconductor devices with replacement gate structuresGLOBALFOUNDRIES INC·Filed 2011·Granted Jan 22, 2013·9 cites·13 claims
- 1587US8927407B2Method of forming self-aligned contacts for a semiconductor deviceBAARS PETER·Filed 2012·Granted Jan 6, 2015·9 cites·19 claims
- 1686US10727236B2Circuits constructed from stacked field-effect transistorsGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 28, 2020·4 cites·17 claims
- 1786US9793294B1Junction formation with reduced Ceff for 22nm FDSOI devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 17, 2017·4 cites·19 claims
- 1886US8362537B2Memory devices including semiconductor pillarsQIMONDA AG·Filed 2012·Granted Jan 29, 2013·7 cites·12 claims
- 1985US10103067B1Semiconductor device comprising trench isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 2085US9136175B2Methods for fabricating integrated circuitsGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 15, 2015·6 cites·20 claims
- 2185US8742510B2Semiconductor devices with replacement gate structures having conductive contacts positioned therebetweenGLOBALFOUNDRIES INC·Filed 2012·Granted Jun 3, 2014·6 cites·20 claims
- 2285US8652889B2Fin-transistor formed on a patterned STI region by late fin etchWEI ANDY·Filed 2012·Granted Feb 18, 2014·8 cites·17 claims
- 2384US8614123B2Method of forming a semiconductor device by using sacrificial gate electrodes and sacrificial self-aligned contact structuresWEI ANDY·Filed 2011·Granted Dec 24, 2013·7 cites·20 claims
- 2484US7371645B2Method of manufacturing a field effect transistor device with recessed channel and corner gate deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 13, 2008·11 cites·13 claims
- 2583US9425189B1Compact FDSOI device with Bulex contact extending through buried insulating layer adjacent gate structure for back-biasGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·4 cites·9 claims
- 2683US8790975B2Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal featuresBAARS PETER·Filed 2011·Granted Jul 29, 2014·6 cites·22 claims
- 2783US8399352B2Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regionsWERNER THOMAS·Filed 2011·Granted Mar 19, 2013·6 cites·13 claims
- 2882US10522655B2Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 31, 2019·3 cites·7 claims
- 2982US10347543B2FDSOI semiconductor device with contact enhancement layer and method of manufacturingGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 9, 2019·4 cites·19 claims
- 3082US7659602B2Semiconductor component with MIM capacitorQIMONDA AG·Filed 2008·Granted Feb 9, 2010·9 cites·29 claims
- 3181US9735174B2FDSOI—capacitorGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 15, 2017·3 cites·21 claims
- 3281US8846513B2Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fillBAARS PETER·Filed 2011·Granted Sep 30, 2014·6 cites·22 claims
- 3380US8222103B1Semiconductor device with embedded low-K metallizationBAARS PETER·Filed 2011·Granted Jul 17, 2012·5 cites·24 claims
- 3480US7851356B2Integrated circuit and methods of manufacturing the sameQIMONDA AG·Filed 2007·Granted Dec 14, 2010·8 cites·11 claims
- 3579US8916433B2Superior integrity of high-k metal gate stacks by capping STI regionsSCHEIPER THILO·Filed 2012·Granted Dec 23, 2014·5 cites·22 claims
- 3679US8609457B2Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making sameBAARS PETER·Filed 2011·Granted Dec 17, 2013·5 cites·16 claims
- 3778US9564521B2Semiconductor device comprising ferroelectric elements and fast high-K metal gate transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 7, 2017·2 cites·19 claims
- 3878US8647952B2Encapsulation of closely spaced gate electrode structuresBAARS PETER·Filed 2010·Granted Feb 11, 2014·4 cites·27 claims
- 3977US9502564B2Fully depleted device with buried insulating layer in channel regionGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 22, 2016·2 cites·15 claims
- 4077US8415214B2STI silicon nitride cap for flat FEOL topologyJAKUBOWSKI FRANK·Filed 2011·Granted Apr 9, 2013·5 cites·15 claims
- 4176US9337045B2Methods of forming a semiconductor circuit element and semiconductor circuit elementGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·4 cites·18 claims
- 4275US8921904B2Replacement gate fabrication methodsGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 30, 2014·3 cites·11 claims
- 4373US10707330B2Semiconductor device with interconnect to source/drainGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 7, 2020·1 cites·19 claims
- 4473US10475901B1Cap removal for gate electrode structures with reduced complexityGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 12, 2019·1 cites·20 claims
- 4573US10032891B2FinFET based flash memory cellGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 4673US8293605B2Methods for fabricating a CMOS integrated circuit having a dual stress layer (DSL)BAARS PETER·Filed 2011·Granted Oct 23, 2012·3 cites·14 claims
- 4770US9666589B1FinFET based flash memory cellGLOBALFOUNDRIES INC·Filed 2016·Granted May 30, 2017·1 cites·11 claims
- 4870US9608003B2Integrated circuit product with bulk and SOI semiconductor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 28, 2017·1 cites·10 claims
- 4970US9391156B2Embedded capacitorGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·2 cites·24 claims
- 5070US9023696B2Method of forming contacts for devices with multiple stress linersBAARS PETER·Filed 2011·Granted May 5, 2015·3 cites·20 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →