Inventor · disambiguated record
Peng-Fu Hsu
Also filed as: HSU PENG-FU
40 granted patents·8 pending applications·257 citations·filing 2000–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG27ASM IP HOLDING BV12HSU PENG-FU3TAIWAN SEMICONDUCTOR MFG CO LTD3CA NAT RESEARCH COUNCIL1
Top patents by PatentIndex Score
48 records- 0194US7378713B2Semiconductor devices with dual-metal gate structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 27, 2008·37 cites·26 claims
- 0293US11798999B2Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structuresASM IP HOLDING BV·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 0392US7812414B2Hybrid process for forming metal gatesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 12, 2010·20 cites·13 claims
- 0491US11929314B2Interconnect structures including a fin structure and a metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 0589US8853068B2Method of fabricating dual high-k metal gate for MOS devicesHSU PENG-FU·Filed 2011·Granted Oct 7, 2014·9 cites·20 claims
- 0688US7012027B2Zirconium oxide and hafnium oxide etching using halogen containing chemicalsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 14, 2006·44 cites·14 claims
- 0786US2025357295A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0885US8105931B2Method of fabricating dual high-k metal gates for MOS devicesHSU PENG-FU·Filed 2009·Granted Jan 31, 2012·10 cites·11 claims
- 0984US12094936B2Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structuresASM IP HOLDING BV·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 1084US11056567B2Method of forming a doped metal carbide film on a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2019·Granted Jul 6, 2021·3 cites·29 claims
- 1182US7074727B2Process for improving dielectric properties in low-k organosilicate dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 11, 2006·17 cites·14 claims
- 1280US10847371B2Method of forming an electrode on a substrate and a semiconductor device structure including an electrodeASM IP HOLDING BV·Filed 2019·Granted Nov 24, 2020·2 cites·14 claims
- 1379US7732878B2MOS devices with continuous contact etch stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 8, 2010·8 cites·9 claims
- 1478US11923192B2Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structuresASM IP HOLDING BV·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 1578US6369256B1Self-reducible copper(II) source reagents for chemical vapor deposition of copper metalCA NAT RESEARCH COUNCIL·Filed 2000·Granted Apr 9, 2002·11 cites·45 claims
- 1677US8536660B2Hybrid process for forming metal gates of MOS devicesHSU PENG-FU·Filed 2008·Granted Sep 17, 2013·8 cites·17 claims
- 1777US7989321B2Semiconductor device gate structure including a gettering layerTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·5 cites·18 claims
- 1875US7531399B2Semiconductor devices and methods with bilayer dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 12, 2009·5 cites·17 claims
- 1975US7122484B2Process for removing organic materials during formation of a metal interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 17, 2006·19 cites·31 claims
- 2075US2024170381A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2174US7947591B2Semiconductor devices with dual-metal gate structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 24, 2011·5 cites·16 claims
- 2273US12020938B2Method of forming an electrode on a substrate and a semiconductor device structure including an electrodeASM IP HOLDING BV·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 2373US11411088B2Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structuresASM IP HOLDING BV·Filed 2020·Granted Aug 9, 2022·0 cites·8 claims
- 2473US8324090B2Method to improve dielectric quality in high-k metal gate technologyMASUOKA YURI·Filed 2008·Granted Dec 4, 2012·6 cites·21 claims
- 2568US6706640B1Metal silicide etch resistant plasma etch methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 16, 2004·11 cites·20 claims
- 2666US11398382B2Method of forming an electrode on a substrate and a semiconductor device structure including an electrodeASM IP HOLDING BV·Filed 2020·Granted Jul 26, 2022·0 cites·18 claims
- 2765US8836038B2CMOS dual metal gate semiconductor deviceHOU YONG-TIAN·Filed 2010·Granted Sep 16, 2014·2 cites·19 claims
- 2865US6864193B2Aqueous cleaning composition containing copper-specific corrosion inhibitorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 8, 2005·9 cites·8 claims
- 2964US10818758B2Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Oct 27, 2020·0 cites·19 claims
- 3062US11469098B2Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structuresASM IP HOLDING BV·Filed 2019·Granted Oct 11, 2022·0 cites·28 claims
- 3161US6838381B2Methods for improving sheet resistance of silicide layer after removal of etch stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 4, 2005·11 cites·25 claims
- 3258US2021328036A1Method for forming a doped metal carbide film on a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2021·Application pending·0 cites
- 3356US9263445B2Method of fabricating dual high-k metal gates for MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 16, 2016·0 cites·20 claims
- 3456US7663185B2FIN-FET device structure formed employing bulk semiconductor substrateTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 16, 2010·1 cites·17 claims
- 3554US7373941B2Wet cleaning cavitation system and method to remove particulate wafer contaminationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 20, 2008·4 cites·17 claims
- 3654US6969688B2Wet etchant composition and method for etching HfO2 and ZrO2TAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 29, 2005·5 cites·11 claims
- 3752US8384159B2Semiconductor devices and methods with bilayer dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 26, 2013·0 cites·19 claims
- 3850US7598176B2Method for photoresist stripping and treatment of low-k dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 6, 2009·2 cites·20 claims
- 3946US10886123B2Methods for forming low temperature semiconductor layers and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Jan 5, 2021·0 cites·18 claims
- 4046US7939396B2Base oxide engineering for high-K gate stacksTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 10, 2011·0 cites·20 claims
- 4145US7400401B2Measuring low dielectric constant film properties during processingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 15, 2008·0 cites·17 claims
- 4245US2010052077A1High-k metal gate structure including buffer layerTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 4344US2006054597A1Wet etchant composition and method for etching HfO2 and ZrO2TAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 4443US7875547B2Contact hole structures and contact structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 25, 2011·0 cites·14 claims
- 4541US7208331B2Methods and structures for critical dimension and profile measurementTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 24, 2007·0 cites·6 claims
- 4640US2008050879A1Methods of forming metal-containing gate structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4738US2008001237A1Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4837US2007228480A1CMOS device having PMOS and NMOS transistors with different gate structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →