Inventor · disambiguated record
Philipp Steinmann
Also filed as: STEINMANN PHILIPP
36 granted patents·8 pending applications·396 citations·filing 1999–2023
97Inventor score
Files withTEXAS INSTRUMENTS INC23WOLFSPEED INC7GLOBALFOUNDRIES INC3STEINMANN PHILIPP3BALSTER SCOTT GERARD1
Top patents by PatentIndex Score
44 records- 0194US9583596B2Drain extended CMOS with counter-doped drain extensionTEXAS INSTRUMENTS INC·Filed 2015·Granted Feb 28, 2017·8 cites·11 claims
- 0294US6407425B1Programmable neuron MOSFET on SOITEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 18, 2002·87 cites·24 claims
- 0388US8592900B2Drain extended CMOS with counter-doped drain extensionSTEINMANN PHILIPP·Filed 2011·Granted Nov 26, 2013·8 cites·8 claims
- 0488US7403094B2Thin film resistor and dummy fill structure and method to improve stability and reduce self-heatingTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 22, 2008·18 cites·19 claims
- 0588US7039888B2Modeling process for integrated circuit film resistorsTEXAS INSTRUMENTS INC·Filed 2003·Granted May 2, 2006·52 cites·14 claims
- 0685US8277763B2Incubator apparatus and methodSTEINMANN PHILIPP·Filed 2007·Granted Oct 2, 2012·34 cites·19 claims
- 0785US7422972B2On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 9, 2008·13 cites·4 claims
- 0885US6958523B2On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 25, 2005·38 cites·6 claims
- 0980US6872655B2Method of forming an integrated circuit thin film resistorTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 29, 2005·14 cites·13 claims
- 1077US6497824B1One mask solution for the integration of the thin film resistorTEXAS INSTRUMENTS INC·Filed 2000·Granted Dec 24, 2002·23 cites·6 claims
- 1173US9231054B2Drain extended CMOS with counter-doped drain extensionTEXAS INSTRUMENTS INC·Filed 2013·Granted Jan 5, 2016·2 cites·10 claims
- 1272US11579645B2Device design for short-circuitry protection circuitry within transistorsWOLFSPEED INC·Filed 2019·Granted Feb 14, 2023·1 cites·26 claims
- 1372US6148017ALaser diode/modulator combinationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 14, 2000·39 cites·11 claims
- 1471US12393214B2Device design for short-circuit protection of transistorsWOLFSPEED INC·Filed 2023·Granted Aug 19, 2025·0 cites·26 claims
- 1571US10049917B2FDSOI channel control by implanted high-K buried oxideGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 14, 2018·1 cites·15 claims
- 1671US7208388B2Thin film resistor head structure and method for reducing head resistivity varianceTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 24, 2007·5 cites·18 claims
- 1768US7112286B2Thin film resistor structure and method of fabricating a thin film resistor structureTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 26, 2006·14 cites·12 claims
- 1867US6737326B2Method of integrating a thin film resistor in a multi-level metal tungsten-plug interconnectTEXAS INSTRUMENTS INC·Filed 2001·Granted May 18, 2004·11 cites·13 claims
- 1965US11721755B2Methods of forming semiconductor power devices having graded lateral dopingWOLFSPEED INC·Filed 2022·Granted Aug 8, 2023·0 cites·26 claims
- 2065US7670890B2Silicide block isolated junction field effect transistor source, drain and gateTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2006·Granted Mar 2, 2010·3 cites·34 claims
- 2165US7615425B2Open source/drain junction field effect transistorTEXAS INSTRUMENTS INC·Filed 2006·Granted Nov 10, 2009·3 cites·26 claims
- 2263US11038092B2Fin-based devices based on the thermoelectric effectGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 15, 2021·0 cites·11 claims
- 2363US8012844B2Method of manufacturing an integrated circuitTEXAS INSTRUMENTS INC·Filed 2009·Granted Sep 6, 2011·2 cites·13 claims
- 2462US7498639B2Integrated BiCMOS semiconductor circuitTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 3, 2009·2 cites·4 claims
- 2560US8932942B2Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contactSTEINMANN PHILIPP·Filed 2010·Granted Jan 13, 2015·1 cites·10 claims
- 2659US12283534B2Power semiconductor devices with improved overcoat adhesion and/or protectionWOLFSPEED INC·Filed 2020·Granted Apr 22, 2025·0 cites·32 claims
- 2759US11282951B2Semiconductor power devices having graded lateral doping in the source regionWOLFSPEED INC·Filed 2020·Granted Mar 22, 2022·0 cites·22 claims
- 2858US10643885B2FDSOI channel control by implanted high-k buried oxideGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·0 cites·17 claims
- 2958US7130182B2Stacked capacitor and method for fabricating sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 31, 2006·6 cites·9 claims
- 3058US2025203960A1Asymmetric edge terminationWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3157US7217322B2Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layerTEXAS INSTRUMENTS INC·Filed 2004·Granted May 15, 2007·5 cites·15 claims
- 3256US8847359B2High voltage bipolar transistor and method of fabricationBALSTER SCOTT GERARD·Filed 2009·Granted Sep 30, 2014·2 cites·15 claims
- 3356US2023418319A1Semiconductor transistors having minimum gate-to-source voltage clamp circuitsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3451US2018342661A1Fin-based devices based on the thermoelectric effectGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3545US7192838B2Method of producing complementary SiGe bipolar transistorsTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 20, 2007·2 cites·5 claims
- 3645US2021273090A1Semiconductor die with improved edge terminationCREE INC·Filed 2020·Application pending·0 cites
- 3745US2009250784A1Structure and method for elimination of process-related defects in poly/metal plate capacitorsTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 3844US7144789B2Method of fabricating complementary bipolar transistors with SiGe base regionsTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 5, 2006·2 cites·12 claims
- 3943US2022219971A1Multiply encapsulated micro electrical mechanical systems deviceCAMBRIDGE ENTPR LTD·Filed 2020·Application pending·0 cites
- 4042US7403095B2Thin film resistor structure and method of fabricating a thin film resistor structureTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 22, 2008·0 cites·8 claims
- 4139US7005361B2Providing high precision resistance in an integrated circuit using a thin film resistor of controlled dimensionTEXAS INSTRUMENTS INC·Filed 2004·Granted Feb 28, 2006·0 cites·11 claims
- 4237US7118981B2Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistorTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 10, 2006·0 cites·19 claims
- 4337US2004070048A1Providing high precision resistance in an integrated circuit using a thin film resistor of controlled dimensionFiled 2002·Application pending·0 cites
- 4433US2001046771A1Thin film resistor having improved temperature independence and a method of engineering the TCR of the thin film resistorFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →