Inventor · disambiguated record
Po-Lun Cheng
Also filed as: CHENG PO-LUN
18 granted patents·12 pending applications·289 citations·filing 2002–2016
93Inventor score
Top patents by PatentIndex Score
30 records- 0196US7592231B2MOS transistor and fabrication thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 22, 2009·110 cites·40 claims
- 0296US7456087B2Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2007·Granted Nov 25, 2008·70 cites·11 claims
- 0391US7371649B2Method of forming carbon-containing silicon nitride layerUNITED MICROELECTRONICS CORP·Filed 2006·Granted May 13, 2008·17 cites·14 claims
- 0490US7402496B2Complementary metal-oxide-semiconductor device and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jul 22, 2008·29 cites·23 claims
- 0585US7745847B2Metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jun 29, 2010·11 cites·11 claims
- 0681US7186605B2Method of fabricating gatesUNITED MICROELECTRONICS CORP·Filed 2004·Granted Mar 6, 2007·28 cites·17 claims
- 0778US8613605B2Centrifugal pumpHAMMAR JOHN·Filed 2010·Granted Dec 24, 2013·7 cites·23 claims
- 0874US8076194B2Method of fabricating metal oxide semiconductor transistorTSENG CHU-YIN·Filed 2010·Granted Dec 13, 2011·5 cites·22 claims
- 0973US8288802B2Spacer structure wherein carbon-containing oxynitride film formed withinCHENG PO-LUN·Filed 2006·Granted Oct 16, 2012·5 cites·17 claims
- 1064US7335607B2Method of forming a gate dielectric layerUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 26, 2008·2 cites·19 claims
- 1160US7329591B2Method for forming silicon-containing film and method for decreasing number of particlesUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 12, 2008·1 cites·15 claims
- 1259US8106466B2MOS transistor and method for fabricating the sameCHENG PO-LUN·Filed 2008·Granted Jan 31, 2012·2 cites·9 claims
- 1357US8716092B2Method for fabricating MOS transistorsCHENG PO-LUN·Filed 2011·Granted May 6, 2014·1 cites·13 claims
- 1453US2008176390A1Method of forming carbon-containing silicon nitride layerUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 1549US8415723B2Spacer structure wherein carbon-containing oxide film formed withinCHENG PO-LUN·Filed 2012·Granted Apr 9, 2013·0 cites·20 claims
- 1648US8067282B2Method for selective formation of trenchCHU PIN-CHIEN·Filed 2009·Granted Nov 29, 2011·1 cites·15 claims
- 1743US2008233722A1Method of forming selective area compound semiconductor epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 1843US2008171412A1Fabrication methods for mos device and cmos deviceUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 1942US2006226500A1Gate dielectric layer and method of forming the sameCHENG PO-LUN·Filed 2005·Application pending·0 cites
- 2040US9148039B2Motor assemblyFU ZHI PING·Filed 2011·Granted Sep 29, 2015·0 cites·14 claims
- 2139US2006172473A1Method of forming a two-layer gate dielectricCHENG PO-LUN·Filed 2005·Application pending·0 cites
- 2239US2008116525A1Complementary metal-oxide-semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 2337US2009108291A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2434US2017207079A1Substrate cleaning methodUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 2533US2016155818A1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2631US2003181027A1Method of forming a polysilicon layerFiled 2002·Application pending·0 cites
- 2731US2017186607A1Method of forming a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2830US9761687B2Method of forming gate dielectric layer for MOS transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 12, 2017·0 cites·17 claims
- 2925US2017098558A1Acid replenishing system and method for acid tankUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3024US9761693B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 12, 2017·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →