Inventor · disambiguated record
Ralf Richter
Also filed as: RICHTER RALF · RICHTER RALF RR
128 granted patents·26 pending applications·1,256 citations·filing 1995–2023
99Inventor score
Top patents by PatentIndex Score
154 records- 0197US10997350B1Semiconductor circuit design and unit pin placementIBM·Filed 2020·Granted May 4, 2021·10 cites·25 claims
- 0297US10033383B1Programmable logic elements and methods of operating the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 24, 2018·63 cites·18 claims
- 0397US9583640B1Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structureGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 28, 2017·30 cites·20 claims
- 0497US7550396B2Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 23, 2009·507 cites·22 claims
- 0596US6355358B1Multilayer compositeDEGUSSA·Filed 2000·Granted Mar 12, 2002·81 cites·31 claims
- 0695US6677015B2Molding composition with good capability for blow moldingDEGUSSA·Filed 2001·Granted Jan 13, 2004·83 cites·12 claims
- 0793US8815741B1Method of forming a semiconductor structure including an implantation of ions into a layer of spacer materialGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 26, 2014·13 cites·20 claims
- 0893US6391982B1Highly branched polyamide graft copolymersDEGUSSA·Filed 2000·Granted May 21, 2002·43 cites·17 claims
- 0992US10163933B1Ferro-FET device with buried buffer/ferroelectric layer stackGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·8 cites·10 claims
- 1092US9842845B1Method of forming a semiconductor device structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 12, 2017·13 cites·20 claims
- 1192US6538073B1Polyamide graft copolymersDEGUSSA·Filed 2000·Granted Mar 25, 2003·39 cites·54 claims
- 1289US9391176B2Multi-gate FETs having corrugated semiconductor stacks and method of forming the sameGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·9 cites·17 claims
- 1389US8423940B2Early noise detection and noise aware routing in circuit designDAELLENBACH LUKAS·Filed 2011·Granted Apr 16, 2013·23 cites·20 claims
- 1489US6407182B1Free-flowing transparent polyamide molding compositionDEGUSSA·Filed 2001·Granted Jun 18, 2002·39 cites·13 claims
- 1588US9922986B2Semiconductor structure including a plurality of pairs of nonvolatile memory cells and an edge cell and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 20, 2018·5 cites·20 claims
- 1688US7906383B2Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2008·Granted Mar 15, 2011·16 cites·28 claims
- 1787US9012956B2Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGeGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 21, 2015·8 cites·19 claims
- 1887US7704586B2Plastic molded bodies having two-dimensional and three-dimensional image structures produced through laser subsurface engravingDEGUSSA·Filed 2006·Granted Apr 27, 2010·6 cites·21 claims
- 1986US8367504B2Method for forming semiconductor fuses in a semiconductor device comprising metal gatesGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 5, 2013·6 cites·12 claims
- 2086US8212184B2Cold temperature control in a semiconductor deviceMOWRY ANTHONY·Filed 2009·Granted Jul 3, 2012·15 cites·25 claims
- 2186US6726999B2Free flowing polyester molding compositionDEGUSSA·Filed 2001·Granted Apr 27, 2004·30 cites·42 claims
- 2285US7964970B2Technique for enhancing transistor performance by transistor specific contact designGLOBALFOUNDRIES INC·Filed 2007·Granted Jun 21, 2011·11 cites·17 claims
- 2384US9871050B1Flash memory deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 16, 2018·4 cites·12 claims
- 2484US8258062B2Cap layer removal in a high-K metal gate stack by using an etch processRICHTER RALF·Filed 2010·Granted Sep 4, 2012·8 cites·25 claims
- 2583US9412859B2Contact geometry having a gate silicon length decoupled from a transistor lengthGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 9, 2016·5 cites·24 claims
- 2683US7678690B2Semiconductor device comprising a contact structure with increased etch selectivityADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 16, 2010·12 cites·12 claims
- 2782US8951907B2Semiconductor devices having through-contacts and related fabrication methodsRICHTER RALF·Filed 2010·Granted Feb 10, 2015·7 cites·18 claims
- 2882US7084300B2Work-up of residues in the preparation of carboxylic acidsDEGUSSA·Filed 2003·Granted Aug 1, 2006·11 cites·21 claims
- 2981US10079242B2Logic and flash field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 18, 2018·4 cites·19 claims
- 3081US7985668B1Method for forming a metal silicide having a lower potential for containing material defectsGLOBALFOUNDRIES INC·Filed 2010·Granted Jul 26, 2011·6 cites·18 claims
- 3180US9614003B1Method of forming a memory device structure and memory device structureGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 4, 2017·5 cites·18 claims
- 3280US8735241B1Semiconductor device structure and methods for forming a CMOS integrated circuit structureGLOBALFOUNDRIES INC·Filed 2013·Granted May 27, 2014·4 cites·13 claims
- 3378US7416973B2Method of increasing the etch selectivity in a contact structure of semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 26, 2008·8 cites·10 claims
- 3476US10249633B2Flash memory deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·2 cites·20 claims
- 3576US9472642B2Method of forming a semiconductor device structure and such a semiconductor device structureGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 18, 2016·2 cites·25 claims
- 3676US9324868B2Epitaxial growth of silicon for FinFETS with non-rectangular cross-sectionsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·3 cites·13 claims
- 3776US9054044B2Method for forming a semiconductor device and semiconductor device structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 9, 2015·3 cites·6 claims
- 3876US8216928B1Methods for fabricating semiconductor devices having local contactsRICHTER RALF·Filed 2011·Granted Jul 10, 2012·4 cites·20 claims
- 3975US7939415B2Method for forming a substrate contact for advanced SOI devices based on a deep trench capacitor configurationADVANCED MICRO DEVICES INC·Filed 2008·Granted May 10, 2011·6 cites·17 claims
- 4075US7871941B2Method for reducing resist poisoning during patterning of stressed nitrogen-containing layers in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted Jan 18, 2011·4 cites·19 claims
- 4174US8426312B2Method of reducing contamination by providing an etch stop layer at the substrate edgeRICHTER RALF·Filed 2006·Granted Apr 23, 2013·5 cites·10 claims
- 4274US7611991B2Technique for increasing adhesion of metallization layers by providing dummy viasADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 3, 2009·8 cites·8 claims
- 4373US9972634B2Semiconductor device comprising a floating gate flash memory deviceGLOBALFOUNDRIES INC·Filed 2016·Granted May 15, 2018·2 cites·20 claims
- 4473US9941348B2Method of forming a capacitor structure and capacitor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 10, 2018·2 cites·20 claims
- 4572US10176859B2Non-volatile transistor element including a buried ferroelectric material based storage mechanismGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·4 cites·20 claims
- 4672US8541885B2Technique for enhancing transistor performance by transistor specific contact designGERHARDT MARTIN·Filed 2011·Granted Sep 24, 2013·3 cites·8 claims
- 4771US8536050B2Selective shrinkage of contact elements in a semiconductor deviceFROHBERG KAI·Filed 2011·Granted Sep 17, 2013·3 cites·18 claims
- 4871US8198166B2Using high-k dielectrics as highly selective etch stop materials in semiconductor devicesKAMMLER THORSTEN·Filed 2010·Granted Jun 12, 2012·3 cites·17 claims
- 4971US8129276B2Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistorsRICHTER RALF·Filed 2010·Granted Mar 6, 2012·3 cites·11 claims
- 5070US8384161B2Contact optimization for enhancing stress transfer in closely spaced transistorsGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 26, 2013·3 cites·26 claims
Showing the top 50 of 154 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →