Inventor · disambiguated record
Rahul Sharangpani
Also filed as: SHARANGPANI RAHUL
115 granted patents·17 pending applications·2,144 citations·filing 1996–2023
99Inventor score
Files withSANDISK TECHNOLOGIES LLC96SANDISK TECHNOLOGIES INC25APPLIED MATERIALS INC3WESTERN DIGITAL TECH INC3ASSOCIATES AG1
Top patents by PatentIndex Score
132 records- 0199US11482539B2Three-dimensional memory device including metal silicide source regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 25, 2022·11 cites·6 claims
- 0299US11177280B1Three-dimensional memory device including wrap around word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 16, 2021·13 cites·20 claims
- 0399US11127728B2Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 21, 2021·9 cites·20 claims
- 0499US10665581B1Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·86 cites·15 claims
- 0599US10290648B1Three-dimensional memory device containing air gap rails and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·71 cites·12 claims
- 0699US10283513B1Three-dimensional memory device with annular blocking dielectrics and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·82 cites·11 claims
- 0799US9824966B1Three-dimensional memory device containing a lateral source contact and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 21, 2017·129 cites·18 claims
- 0898US11201139B2Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 14, 2021·7 cites·20 claims
- 0998US11145628B1Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 12, 2021·6 cites·20 claims
- 1098US10804291B1Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·22 cites·20 claims
- 1198US10651196B1Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 12, 2020·33 cites·13 claims
- 1298US10381559B1Three-dimensional phase change memory array including discrete middle electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·46 cites·22 claims
- 1398US10276583B2Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·51 cites·13 claims
- 1498US10050054B2Three-dimensional memory device having drain select level isolation structure and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 14, 2018·26 cites·9 claims
- 1598US9960180B1Three-dimensional memory device with partially discrete charge storage regions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 1, 2018·46 cites·12 claims
- 1698US9875929B1Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 23, 2018·146 cites·24 claims
- 1798US9842907B2Memory device containing cobalt silicide control gate electrodes and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·27 cites·9 claims
- 1898US9793139B2Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word linesSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 17, 2017·38 cites·26 claims
- 1998US9698152B2Three-dimensional memory structure with multi-component contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·35 cites·13 claims
- 2098US9698223B2Memory device containing stress-tunable control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 4, 2017·26 cites·27 claims
- 2198US9659955B1Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 23, 2017·46 cites·19 claims
- 2298US9478558B2Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·43 cites·34 claims
- 2398US9397046B1Fluorine-free word lines for three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 19, 2016·63 cites·23 claims
- 2498US9236396B1Three dimensional NAND device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 12, 2016·46 cites·11 claims
- 2598US9230983B1Metal word lines for three dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·43 cites·20 claims
- 2698US9159739B2Floating gate ultrahigh density vertical NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 13, 2015·70 cites·27 claims
- 2797US11527500B2Semiconductor structure containing multilayer bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 13, 2022·4 cites·20 claims
- 2897US11049880B2Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 29, 2021·15 cites·6 claims
- 2997US11024648B2Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 1, 2021·6 cites·18 claims
- 3097US10937809B1Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 2, 2021·25 cites·13 claims
- 3197US10529620B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 7, 2020·23 cites·10 claims
- 3297US10381409B1Three-dimensional phase change memory array including discrete middle electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·35 cites·20 claims
- 3397US10290652B1Three-dimensional memory device with graded word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·22 cites·20 claims
- 3497US9984963B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 29, 2018·37 cites·17 claims
- 3597US9691884B2Monolithic three dimensional NAND strings and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 27, 2017·41 cites·42 claims
- 3697US9576966B1Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 21, 2017·25 cites·23 claims
- 3797US9305849B1Method of making a three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·47 cites·11 claims
- 3896US11121140B2Ferroelectric tunnel junction memory device with integrated ovonic threshold switchesSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 14, 2021·4 cites·20 claims
- 3996US10790300B2Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 29, 2020·12 cites·10 claims
- 4096US10361213B2Three dimensional memory device containing multilayer wordline barrier films and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 23, 2019·22 cites·11 claims
- 4196US9806089B2Method of making self-assembling floating gate electrodes for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·19 cites·14 claims
- 4296US9806090B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·18 cites·11 claims
- 4396US9768270B2Method of selectively depositing floating gate material in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 19, 2017·24 cites·7 claims
- 4496US9613977B2Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 4, 2017·30 cites·20 claims
- 4596US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 4696US9496419B2Ruthenium nucleation layer for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 15, 2016·30 cites·30 claims
- 4796US9379124B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·24 cites·19 claims
- 4895US10868025B2Three-dimensional memory device including replacement crystalline channels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 15, 2020·13 cites·13 claims
- 4995US10756110B1Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 25, 2020·14 cites·15 claims
- 5095US10615123B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 7, 2020·11 cites·10 claims
Showing the top 50 of 132 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →