Inventor · disambiguated record
Reza Arghavani
Also filed as: ARGHAVANI REZA
56 granted patents·16 pending applications·3,201 citations·filing 1996–2020
99Inventor score
Top patents by PatentIndex Score
72 records- 0199US9997357B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2014·Granted Jun 12, 2018·430 cites·22 claims
- 0299US9396961B2Integrated etch/clean for dielectric etch applicationsLAM RES CORP·Filed 2015·Granted Jul 19, 2016·105 cites·26 claims
- 0399US7253123B2Method for producing gate stack sidewall spacersAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·253 cites·24 claims
- 0498US7018941B2Post treatment of low k dielectric filmsAPPLIED MATERIALS INC·Filed 2004·Granted Mar 28, 2006·674 cites·20 claims
- 0597US10559468B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2018·Granted Feb 11, 2020·13 cites·21 claims
- 0697US6617209B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2002·Granted Sep 9, 2003·132 cites·19 claims
- 0796US9153486B2CVD based metal/semiconductor OHMIC contact for high volume manufacturing applicationsLAM RES CORP·Filed 2013·Granted Oct 6, 2015·31 cites·25 claims
- 0896US7049200B2Method for forming a low thermal budget spacerAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·233 cites·20 claims
- 0996US6617210B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2002·Granted Sep 9, 2003·127 cites·10 claims
- 1094US7323391B2Substrate having silicon germanium material and stressed silicon nitride layerAPPLIED MATERIALS INC·Filed 2005·Granted Jan 29, 2008·21 cites·29 claims
- 1194US6620713B2Interfacial layer for gate electrode and high-k dielectric layer and methods of fabricationINTEL CORP·Filed 2002·Granted Sep 16, 2003·80 cites·6 claims
- 1294US6610615B1Plasma nitridation for reduced leakage gate dielectric layersINTEL CORP·Filed 2000·Granted Aug 26, 2003·127 cites·23 claims
- 1394US5780346AN2 O nitrided-oxide trench sidewalls and method of making isolation structureINTEL CORP·Filed 1996·Granted Jul 14, 1998·141 cites·30 claims
- 1493US6900481B2Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistorsINTEL CORP·Filed 2002·Granted May 31, 2005·64 cites·12 claims
- 1592US7678662B2Memory cell having stressed layersAPPLIED MATERIALS INC·Filed 2006·Granted Mar 16, 2010·22 cites·6 claims
- 1692US6087236AIntegrated circuit with multiple gate dielectric structuresINTEL CORP·Filed 1998·Granted Jul 11, 2000·94 cites·15 claims
- 1792US5827769AMethod for fabricating a transistor with increased hot carrier resistance by nitridizing and annealing the sidewall oxide of the gate electrodeINTEL CORP·Filed 1996·Granted Oct 27, 1998·130 cites·13 claims
- 1891US7087497B2Low-thermal-budget gapfill processAPPLIED MATERIALS INC·Filed 2004·Granted Aug 8, 2006·54 cites·16 claims
- 1991US6713358B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2002·Granted Mar 30, 2004·77 cites·3 claims
- 2090US9922977B2Transistor with threshold voltage set notch and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Mar 20, 2018·6 cites·7 claims
- 2188US7674727B2Nitrous oxide anneal of TEOS/ozone CVD for improved gapfillAPPLIED MATERIALS INC·Filed 2006·Granted Mar 9, 2010·11 cites·5 claims
- 2288US6124171AMethod of forming gate oxide having dual thickness by oxidation processINTEL CORP·Filed 1998·Granted Sep 26, 2000·86 cites·5 claims
- 2386US9478411B2Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOSLAM RES CORP·Filed 2014·Granted Oct 25, 2016·7 cites·17 claims
- 2485US11011379B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2019·Granted May 18, 2021·2 cites·12 claims
- 2583US7955510B2Oxide etch with NH4-NF3 chemistryAPPLIED MATERIALS INC·Filed 2009·Granted Jun 7, 2011·6 cites·20 claims
- 2683US6667251B2Plasma nitridation for reduced leakage gate dielectric layersINTEL CORP·Filed 2003·Granted Dec 23, 2003·29 cites·2 claims
- 2781US7816205B2Method of forming non-volatile memory having charge trap layer with compositional gradientAPPLIED MATERIALS INC·Filed 2008·Granted Oct 19, 2010·5 cites·21 claims
- 2880US7045073B2Pre-etch implantation damage for the removal of thin film layersINTEL CORP·Filed 2002·Granted May 16, 2006·22 cites·15 claims
- 2980US6597046B1Integrated circuit with multiple gate dielectric structuresINTEL CORP·Filed 1999·Granted Jul 22, 2003·38 cites·11 claims
- 3079US10043672B2Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing maskLAM RES CORP·Filed 2016·Granted Aug 7, 2018·2 cites·24 claims
- 3179US8759872B2Transistor with threshold voltage set notch and method of fabrication thereofARGHAVANI REZA·Filed 2010·Granted Jun 24, 2014·6 cites·9 claims
- 3278US10796995B2Semiconductor devices including a first cobalt alloy in a first barrier layer and a second cobalt alloy in a second barrier layerUNIV TOHOKU·Filed 2017·Granted Oct 6, 2020·2 cites·17 claims
- 3378US7671414B2Semiconductor on insulator apparatusINTEL CORP·Filed 2008·Granted Mar 2, 2010·5 cites·21 claims
- 3476US6153480AAdvanced trench sidewall oxide for shallow trench technologyINTEL COROPORATION·Filed 1998·Granted Nov 28, 2000·51 cites·28 claims
- 3573US7166505B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2004·Granted Jan 23, 2007·11 cites·11 claims
- 3671US8252653B2Method of forming a non-volatile memory having a silicon nitride charge trap layerBALSEANU MIHAELA·Filed 2008·Granted Aug 28, 2012·2 cites·23 claims
- 3770US7141483B2Nitrous oxide anneal of TEOS/ozone CVD for improved gapfillAPPLIED MATERIALS INC·Filed 2004·Granted Nov 28, 2006·11 cites·7 claims
- 3869US7563680B2Substrate having silicon germanium material and stressed silicon nitride layerAPPLIED MATERIALS INC·Filed 2007·Granted Jul 21, 2009·2 cites·18 claims
- 3968US6261925B1N2O Nitrided-oxide trench sidewalls to prevent boron outdiffusion and decrease stressINTEL CORP·Filed 1998·Granted Jul 17, 2001·26 cites·16 claims
- 4066US11380619B2Semiconductor devices including cobalt alloys and fabrication methods thereofUNIV TOHOKU·Filed 2020·Granted Jul 5, 2022·0 cites·13 claims
- 4166US8173495B2Semiconductor on insulatorJIN BEEN-YIH·Filed 2010·Granted May 8, 2012·1 cites·21 claims
- 4263US7875932B2Semiconductor on insulator apparatusINTEL CORP·Filed 2009·Granted Jan 25, 2011·1 cites·20 claims
- 4363US6809017B2Interfacial layer for gate electrode and high-k dielectric layer and methods of fabricationINTEL CORP·Filed 2003·Granted Oct 26, 2004·8 cites·13 claims
- 4458US10741405B2Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing maskLAM RES CORP·Filed 2018·Granted Aug 11, 2020·0 cites·26 claims
- 4558US8501568B2Method of forming flash memory with ultraviolet treatmentBALSEANU MIHAELA·Filed 2008·Granted Aug 6, 2013·0 cites·20 claims
- 4658US7427538B2Semiconductor on insulator apparatus and methodINTEL CORP·Filed 2002·Granted Sep 23, 2008·5 cites·27 claims
- 4754US9418987B2Transistor with threshold voltage set notch and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Aug 16, 2016·0 cites·8 claims
- 4849US7528051B2Method of inducing stresses in the channel region of a transistorAPPLIED MATERIALS INC·Filed 2004·Granted May 5, 2009·3 cites·5 claims
- 4948US2011031997A1Method for fabrication of a semiconductor device and structureNUPGA CORP·Filed 2009·Application pending·0 cites
- 5047US2007123051A1Oxide etch with nh4-nf3 chemistryARGHAVANI REZA·Filed 2007·Application pending·0 cites
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →