Inventor · disambiguated record
Rene Meyer
Also filed as: MEYER RENE · MEYER RENE P · MEYER RENÉ
29 granted patents·8 pending applications·309 citations·filing 2003–2023
96Inventor score
Files withUNITY SEMICONDUCTOR CORP14HEFEI RELIANCE MEMORY LTD5SCHLOSS LAWRENCE4MEYER RENE3RINERSON DARRELL2
Top patents by PatentIndex Score
37 records- 0198US8848425B2Conductive metal oxide structures in non volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2013·Granted Sep 30, 2014·59 cites·20 claims
- 0298US8045364B2Non-volatile memory device ion barrierUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 25, 2011·121 cites·32 claims
- 0395US8003511B2Memory cell formation using ion implant isolated conductive metal oxideUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Aug 23, 2011·26 cites·43 claims
- 0493US10186553B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jan 22, 2019·6 cites·20 claims
- 0589US9818799B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Nov 14, 2017·4 cites·20 claims
- 0689US7724562B2Electrochemical memory with heaterUNIV LELAND STANFORD JUNIOR·Filed 2007·Granted May 25, 2010·21 cites·20 claims
- 0788US8031510B2Ion barrier capUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Oct 4, 2011·9 cites·17 claims
- 0887US8031509B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 4, 2011·13 cites·50 claims
- 0979US11765914B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 1077US8264864B2Memory device with band gap controlMEYER RENE·Filed 2009·Granted Sep 11, 2012·6 cites·12 claims
- 1175US11289542B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Mar 29, 2022·0 cites·19 claims
- 1275US9484533B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Nov 1, 2016·1 cites·20 claims
- 1375US7614969B2Sticks for athletic equipmentHAMMER SPORTS INC·Filed 2006·Granted Nov 10, 2009·21 cites·12 claims
- 1472US8274817B2Non volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2011·Granted Sep 25, 2012·3 cites·30 claims
- 1571US8320161B2Conductive metal oxide structures in non volatile re writable memory devicesSCHLOSS LAWRENCE·Filed 2011·Granted Nov 27, 2012·3 cites·22 claims
- 1669US11037987B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 1769US8058643B2Electrochemical memory with internal boundaryMEYER RENE·Filed 2007·Granted Nov 15, 2011·7 cites·13 claims
- 1869US2021098063A1Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 1967US10535714B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 2067US9767897B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Sep 19, 2017·1 cites·20 claims
- 2166US8565006B2Conductive metal oxide structures in non volatile re writable memory devicesSCHLOSS LAWRENCE·Filed 2012·Granted Oct 22, 2013·2 cites·16 claims
- 2266US8268667B2Memory device using ion implant isolated conductive metal oxideRINERSON DARRELL·Filed 2011·Granted Sep 18, 2012·1 cites·25 claims
- 2365US9293702B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Mar 22, 2016·1 cites·20 claims
- 2459US10803935B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 2559US8358529B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2011·Granted Jan 22, 2013·1 cites·30 claims
- 2656US2013082232A1Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory CellsWU JIAN·Filed 2011·Application pending·0 cites
- 2755US10311950B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2017·Granted Jun 4, 2019·0 cites·20 claims
- 2854US7074566B2Method for testing hormonal effects of substancesSCHERING AG·Filed 2003·Granted Jul 11, 2006·2 cites·9 claims
- 2952US2024170298A1Method for producing an integrated circuit to remedy defects or dislocationsEM MICROELECTRONIC MARIN SA·Filed 2023·Application pending·0 cites
- 3050US8323129B1Process for making composite athletic shaftMEYER RENE P·Filed 2009·Granted Dec 4, 2012·0 cites·17 claims
- 3149US2011315943A1Memory Device Using A Dual Layer Conductive Metal Oxide StructureRINERSON DARRELL·Filed 2011·Application pending·0 cites
- 3246US8493771B2Non-volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2012·Granted Jul 23, 2013·0 cites·32 claims
- 3345US2004009524A1Method for testing hormonal effects of substancesFiled 2003·Application pending·0 cites
- 3443US2012211716A1Oxygen ion implanted conductive metal oxide re-writeable non-volatile memory deviceMEYER RENE·Filed 2011·Application pending·0 cites
- 3540US2013043452A1Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory ElementsUNITY SEMICONDUCTOR CORP·Filed 2011·Application pending·0 cites
- 3639US2013082228A1Memory Device Using Multiple Tunnel Oxide LayersPARRILLO LOUIS·Filed 2011·Application pending·0 cites
- 3728US7619268B2Fast remanent resistive ferroelectric memoryFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2004·Granted Nov 17, 2009·1 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →