Inventor · disambiguated record
Rinji Sugino
Also filed as: SUGINO RINJI
34 granted patents·10 pending applications·415 citations·filing 1993–2018
97Inventor score
Top patents by PatentIndex Score
44 records- 0194US6670241B1Semiconductor memory with deuterated materialsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 30, 2003·79 cites·8 claims
- 0292US7033957B1ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devicesFASL LLC·Filed 2003·Granted Apr 25, 2006·62 cites·21 claims
- 0390US6949481B1Process for fabrication of spacer layer with reduced hydrogen content in semiconductor deviceFASL LLC·Filed 2003·Granted Sep 27, 2005·50 cites·20 claims
- 0489US10020317B2Memory device with multi-layer channel and charge trapping layerCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jul 10, 2018·7 cites·20 claims
- 0587US7354826B1Method for forming memory array bitlines comprising epitaxially grown silicon and related structureSPANSION LLC·Filed 2005·Granted Apr 8, 2008·12 cites·9 claims
- 0685US6884681B1Method of manufacturing a semiconductor memory with deuterated materialsFASL LLC·Filed 2003·Granted Apr 26, 2005·31 cites·10 claims
- 0781US6765254B1Structure and method for preventing UV radiation damage and increasing data retention in memory cellsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·30 cites·13 claims
- 0879US9831114B1Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 28, 2017·2 cites·18 claims
- 0978US7163860B1Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory deviceSPANSION LLC·Filed 2003·Granted Jan 16, 2007·25 cites·19 claims
- 1077US9437470B2Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Sep 6, 2016·3 cites·14 claims
- 1173US8809206B2Patterned dummy wafers loading in batch type CVDSUGINO RINJI·Filed 2011·Granted Aug 19, 2014·3 cites·21 claims
- 1273US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 1369US6803265B1Liner for semiconductor memories and manufacturing method thereforFASL LLC·Filed 2002·Granted Oct 12, 2004·15 cites·20 claims
- 1467US7297592B1Semiconductor memory with data retention linerSPANSION LLC·Filed 2005·Granted Nov 20, 2007·2 cites·20 claims
- 1566US7220643B1System and method for gate formation in a semiconductor deviceSPANSION LLC·Filed 2005·Granted May 22, 2007·3 cites·20 claims
- 1664US9493874B2Distribution of gas over a semiconductor wafer in batch processingSPANSION LLC·Filed 2012·Granted Nov 15, 2016·1 cites·13 claims
- 1764US5578133ADry cleaning process for cleaning a surfaceFUJITSU LTD·Filed 1993·Granted Nov 26, 1996·32 cites·16 claims
- 1860US8987092B2Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edgesKANG INKUK·Filed 2008·Granted Mar 24, 2015·3 cites·16 claims
- 1959US7151028B1Memory cell with plasma-grown oxide spacer for reduced DIBL and Vss resistance and increased reliabilitySPANSION LLC·Filed 2004·Granted Dec 19, 2006·8 cites·20 claims
- 2058US9252026B2Buried trench isolation in integrated circuitsSPANSION LLC·Filed 2014·Granted Feb 2, 2016·0 cites·20 claims
- 2158US2019198611A1Buried Trench Isolation in Integrated CircuitsCYPRESS SEMICONDUCTOR CORP·Filed 2018·Application pending·0 cites
- 2257US11430689B2Inter-layer insulator for electronic devices and apparatus for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Aug 30, 2022·0 cites·20 claims
- 2357US10256137B2Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Apr 9, 2019·0 cites·3 claims
- 2456US7998846B23-D integrated circuit system and methodSPANSION LLC·Filed 2008·Granted Aug 16, 2011·0 cites·12 claims
- 2555US8455268B2Gate replacement with top oxide regrowth for the top oxide improvementLEE CHUNGHO·Filed 2007·Granted Jun 4, 2013·1 cites·20 claims
- 2654US5725677ADry cleaning process for cleaning a surfaceFUJITSU LTD·Filed 1996·Granted Mar 10, 1998·16 cites·18 claims
- 2752US7026211B1Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 11, 2006·4 cites·17 claims
- 2851US2016211321A1Buried Trench Isolation in Integrated CircuitsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Application pending·0 cites
- 2950US2014138790A1Inter-Layer Insulator for Electronic Devices and Apparatus for Forming SameSPANSION LLC·Filed 2012·Application pending·0 cites
- 3049US5662814AMicro-machining minute hollow using native oxide membraneFUJITSU LTD·Filed 1996·Granted Sep 2, 1997·12 cites·23 claims
- 3148US8647969B1Method for forming a semiconductor layer with improved gap filling propertiesSUGINO RINJI·Filed 2012·Granted Feb 11, 2014·0 cites·20 claims
- 3248US8133801B1Method for forming a semiconducting layer with improved gap filling propertiesSUGINO RINJI·Filed 2005·Granted Mar 13, 2012·0 cites·15 claims
- 3346US2013228851A1Memory device protection layerSUGINO RINJI·Filed 2013·Application pending·0 cites
- 3445US8415734B2Memory device protection layerSUGINO RINJI·Filed 2006·Granted Apr 9, 2013·0 cites·16 claims
- 3545US2018323208A1Vertical division of three-dimensional memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2018·Application pending·0 cites
- 3643US9252221B2Formation of gate sidewall structureSPANSION LLC·Filed 2013·Granted Feb 2, 2016·0 cites·9 claims
- 3741US2008142874A1Integrated circuit system with implant oxideSPANSION LLC·Filed 2006·Application pending·0 cites
- 3840US7074677B1Memory with improved charge-trapping dielectric layerFASL LLC·Filed 2002·Granted Jul 11, 2006·3 cites·6 claims
- 3940US2011272775A13d integrated circuit system and methodKIM EUNHA·Filed 2011·Application pending·0 cites
- 4040US2017062456A1Vertical division of three-dimensional memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2015·Application pending·0 cites
- 4139US5909048AMicro-machining minute hollow using native oxide membraneFUJITSU LTD·Filed 1997·Granted Jun 1, 1999·6 cites·5 claims
- 4239US2009261406A1Use of silicon-rich nitride in a flash memory deviceSUH YOUSEOK·Filed 2008·Application pending·0 cites
- 4339US2008061359A1Dual charge storage node with undercut gate oxide for deep sub-micron memory cellLEE CHUNGHO·Filed 2007·Application pending·0 cites
- 4437US8809936B2Memory cell system with multiple nitride layersXUE LEI·Filed 2006·Granted Aug 19, 2014·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →