Inventor · disambiguated record
Roger W. Cheek
Also filed as: CHEEK ROGER · CHEEK ROGER W
30 granted patents·5 pending applications·298 citations·filing 1997–2014
96Inventor score
Files withIBM17BREITWISCH MATTHEW J11SCHROTT ALEJANDRO G2BREITWISCH MATTHEW JOSEPH1BRIGHTSKY MATTHEW J1
Top patents by PatentIndex Score
35 records- 0196US7560721B1Phase change material with filament electrodeIBM·Filed 2008·Granted Jul 14, 2009·42 cites·15 claims
- 0294US7485487B1Phase change memory cell with electrodeIBM·Filed 2008·Granted Feb 3, 2009·28 cites·17 claims
- 0391US8238149B2Methods and apparatus for reducing defect bits in phase change memorySHIH YEN-HAO·Filed 2010·Granted Aug 7, 2012·15 cites·20 claims
- 0491US5913713ACMP polishing pad backside modifications for advantageous polishing resultsIBM·Filed 1997·Granted Jun 22, 1999·95 cites·27 claims
- 0589US8105859B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2009·Granted Jan 31, 2012·16 cites·8 claims
- 0688US8633464B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2012·Granted Jan 21, 2014·7 cites·8 claims
- 0786US8330137B2Pore phase change material cell fabricated from recessed pillarSCHROTT ALEJANDRO G·Filed 2011·Granted Dec 11, 2012·6 cites·20 claims
- 0884US7960203B2Pore phase change material cell fabricated from recessed pillarIBM·Filed 2008·Granted Jun 14, 2011·9 cites·18 claims
- 0982US8686391B2Pore phase change material cell fabricated from recessed pillarSCHROTT ALEJANDRO G·Filed 2012·Granted Apr 1, 2014·4 cites·17 claims
- 1082US8447714B2System for electronic learning synapse with spike-timing dependent plasticity using phase change memoryBREITWISCH MATTHEW JOSEPH·Filed 2009·Granted May 21, 2013·25 cites·25 claims
- 1176US8536675B2Thermally insulated phase change material memory cellsBREITWISCH MATTHEW J·Filed 2012·Granted Sep 17, 2013·2 cites·2 claims
- 1273US8023345B2Iteratively writing contents to memory locations using a statistical modelIBM·Filed 2009·Granted Sep 20, 2011·7 cites·20 claims
- 1370US8772906B2Thermally insulated phase change material cellsIBM·Filed 2013·Granted Jul 8, 2014·1 cites·3 claims
- 1468US7901980B2Self-aligned in-contact phase change memory deviceIBM·Filed 2009·Granted Mar 8, 2011·3 cites·8 claims
- 1561US7652914B2Memory including two access devices per phase change elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jan 26, 2010·4 cites·16 claims
- 1660US7851323B2Phase change material with filament electrodeIBM·Filed 2009·Granted Dec 14, 2010·3 cites·19 claims
- 1759US7094614B2In-situ monitoring of chemical vapor deposition process by mass spectrometryIBM·Filed 2001·Granted Aug 22, 2006·8 cites·9 claims
- 1858US8466006B2Thermally insulated phase material cellsBREITWISCH MATTHEW J·Filed 2012·Granted Jun 18, 2013·0 cites·6 claims
- 1957US8278197B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2008·Granted Oct 2, 2012·0 cites·14 claims
- 2057US8138056B2Thermally insulated phase change material memory cells with pillar structureBREITWISCH MATTHEW J·Filed 2009·Granted Mar 20, 2012·0 cites·4 claims
- 2155US8897062B2Memory programming for a phase change memory cellBREITWISCH MATTHEW J·Filed 2011·Granted Nov 25, 2014·1 cites·12 claims
- 2255US8115186B2Phase change memory cell with reduced switchable volumeBREITWISCH MATTHEW J·Filed 2009·Granted Feb 14, 2012·0 cites·16 claims
- 2355US2015044426A1Catalytic etch with magnetic direction controlIBM·Filed 2014·Application pending·0 cites
- 2454US8716759B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2012·Granted May 6, 2014·0 cites·11 claims
- 2554US2013295742A1Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceIBM·Filed 2013·Application pending·0 cites
- 2653US9105583B2Catalytic etch with magnetic direction controlIBM·Filed 2013·Granted Aug 11, 2015·0 cites·13 claims
- 2752US9166165B2Uniform critical dimension size pore for PCRAM applicationIBM·Filed 2014·Granted Oct 20, 2015·0 cites·8 claims
- 2851US2008265234A1Method of Forming Phase Change Memory Cell With Reduced Switchable VolumeBREITWISCH MATTHEW J·Filed 2007·Application pending·0 cites
- 2950US2008164453A1Uniform critical dimension size pore for pcram applicationBREITWISCH MATTHEW J·Filed 2007·Application pending·0 cites
- 3048US2008090400A1Self-aligned in-contact phase change memory deviceCHEEK ROGER W·Filed 2006·Application pending·0 cites
- 3147US7682945B2Phase change element extension embedded in an electrodeIBM·Filed 2008·Granted Mar 23, 2010·2 cites·20 claims
- 3247US6420263B1Method for controlling extrusions in aluminum metal lines and the device formed therefromIBM·Filed 2000·Granted Jul 16, 2002·2 cites·14 claims
- 3347US6022485AMethod for controlled removal of material from a solid surfaceIBM·Filed 1997·Granted Feb 8, 2000·11 cites·26 claims
- 3441US6254719B1Method for controlled removal of material from a solid surfaceIBM·Filed 1999·Granted Jul 3, 2001·7 cites·6 claims
- 3535US8743599B2Approach for phase change memory cells targeting different device specificationsBRIGHTSKY MATTHEW J·Filed 2012·Granted Jun 3, 2014·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →