Inventor · disambiguated record
Ronny Pfuetzner
Also filed as: PFUETZNER RONNY
5 granted patents·2 pending applications·16 citations·filing 2011–2014
69Inventor score
Top patents by PatentIndex Score
7 records- 0187US8969170B2Method of forming a semiconductor structure including a metal-insulator-metal capacitorGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 3, 2015·14 cites·20 claims
- 0266US8383510B2Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materialsGLOBALFOUNDRIES INC·Filed 2011·Granted Feb 26, 2013·2 cites·17 claims
- 0349US2014264877A1Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier materialGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 0442US8778795B2Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier materialPFUETZNER RONNY·Filed 2011·Granted Jul 15, 2014·0 cites·18 claims
- 0540US8673770B2Methods of forming conductive structures in dielectric layers on an integrated circuit deviceHUISINGA TORSTEN·Filed 2011·Granted Mar 18, 2014·0 cites·22 claims
- 0637US2012153405A1Semiconductor Device Comprising a Contact Structure with Reduced Parasitic CapacitanceHEINRICH JENS·Filed 2011·Application pending·0 cites
- 0732US8685807B2Method of forming metal gates and metal contacts in a common fill processPFUETZNER RONNY·Filed 2011·Granted Apr 1, 2014·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →