Inventor · disambiguated record
Rongping Wang
Also filed as: WANG RONGPING
22 granted patents·11 pending applications·588 citations·filing 2005–2024
95Inventor score
Files withAPPLIED MATERIALS INC24BALSEANU MIHAELA2KUTHI ANDRAS2UNIV NINGBO2AIR FORCE ENGINEERING UNIV1
Top patents by PatentIndex Score
33 records- 0198US8129290B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2006·Granted Mar 6, 2012·492 cites·16 claims
- 0296US9240308B2Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing systemAPPLIED MATERIALS INC·Filed 2014·Granted Jan 19, 2016·17 cites·11 claims
- 0394US9230780B2Hall effect enhanced capacitively coupled plasma sourceAPPLIED MATERIALS INC·Filed 2014·Granted Jan 5, 2016·14 cites·20 claims
- 0493US9552967B2Abatement system having a plasma sourceAPPLIED MATERIALS INC·Filed 2016·Granted Jan 24, 2017·7 cites·16 claims
- 0592US9767990B2Apparatus for treating a gas in a conduitAPPLIED MATERIALS INC·Filed 2016·Granted Sep 19, 2017·9 cites·20 claims
- 0692US9378928B2Apparatus for treating a gas in a conduitAPPLIED MATERIALS INC·Filed 2014·Granted Jun 28, 2016·15 cites·20 claims
- 0790US10187966B2Method and apparatus for gas abatementAPPLIED MATERIALS INC·Filed 2016·Granted Jan 22, 2019·8 cites·17 claims
- 0888US9543124B2Capacitively coupled plasma source for abating compounds produced in semiconductor processesAPPLIED MATERIALS INC·Filed 2015·Granted Jan 10, 2017·4 cites·20 claims
- 0984US8753989B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2012·Granted Jun 17, 2014·5 cites·14 claims
- 1080US11398369B2Method and apparatus for actively tuning a plasma power sourceAPPLIED MATERIALS INC·Filed 2019·Granted Jul 26, 2022·2 cites·20 claims
- 1180US9659757B2Measuring and controlling wafer potential in pulsed RF bias processingLAM RES CORP·Filed 2012·Granted May 23, 2017·4 cites·11 claims
- 1277US7571698B2Low-frequency bias power in HDP-CVD processesAPPLIED MATERIALS INC·Filed 2005·Granted Aug 11, 2009·4 cites·14 claims
- 1374US8728918B2Method and apparatus for fabricating silicon heterojunction solar cellsAPPLIED MATERIALS INC·Filed 2012·Granted May 20, 2014·3 cites·17 claims
- 1473US10757797B2Method and apparatus for gas abatementAPPLIED MATERIALS INC·Filed 2018·Granted Aug 25, 2020·1 cites·18 claims
- 1569US10580626B2Arcing detection apparatus for plasma processingAPPLIED MATERIALS INC·Filed 2016·Granted Mar 3, 2020·1 cites·14 claims
- 1664US2025364216A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1763US8192576B2Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processingKUTHI ANDRAS·Filed 2007·Granted Jun 5, 2012·2 cites·22 claims
- 1860US2009263594A1Low-frequency bias power in hdp-cvd processesAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 1960US2010136261A1Modulation of rf returning straps for uniformity controlAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 2058US11355325B2Methods and systems for monitoring input power for process control in semiconductor process systemsAPPLIED MATERIALS INC·Filed 2020·Granted Jun 7, 2022·0 cites·17 claims
- 2158US10176973B2Method of cooling a composition using a hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing systemAPPLIED MATERIALS INC·Filed 2017·Granted Jan 8, 2019·0 cites·12 claims
- 2257US2024186123A1Heated Pedestal With Impedance Matching Radio Frequency (RF) RodAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2356US2022231473A1Manufacturing Method of a Channel Type Planar Waveguide Amplifier and a Channel Type Planar Waveguide Amplifier ThereofUNIV NINGBO·Filed 2021·Application pending·0 cites
- 2455US11328900B2Plasma ignition circuitAPPLIED MATERIALS INC·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 2553US2025332639A1Ultrafast laser shock forging assisted laser powder bed fusion (lpbf) method capable of inhibiting formation of thermal cracks in high-strength aluminum alloyAIR FORCE ENGINEERING UNIV·Filed 2024·Application pending·0 cites
- 2647US8303763B2Measuring and controlling wafer potential in pulsed RF bias processingKUTHI ANDRAS·Filed 2012·Granted Nov 6, 2012·0 cites·10 claims
- 2745US2016347126A1A tire with a new internal structure including automatic inflatable gas-chambersWANG RONGPING·Filed 2015·Application pending·0 cites
- 2844US2021375701A1Methods and systems for processing a substrateAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 2941US2006105106A1Tensile and compressive stressed materials for semiconductorsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3038US11530156B2Method for preparing all-solid-state photonic crystal fiber preforms by extrusionUNIV NINGBO·Filed 2020·Granted Dec 20, 2022·0 cites·9 claims
- 3134US2016042916A1Post-chamber abatement using upstream plasma sourcesAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 3233US2017114462A1High productivity pecvd tool for wafer processing of semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
- 3328US10211030B2Source RF power split inner coil to improve BCD and etch depth performanceAPPLIED MATERIALS INC·Filed 2015·Granted Feb 19, 2019·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →