Inventor · disambiguated record
Seiji Matsuyama
Also filed as: MATSUYAMA SEIJI
24 granted patents·8 pending applications·142 citations·filing 2002–2023
95Inventor score
Top patents by PatentIndex Score
32 records- 0195US12354871B2Ultrathin atomic layer deposition film accuracy thickness controlLAM RES CORP·Filed 2023·Granted Jul 8, 2025·1 cites·17 claims
- 0295US10566187B2Ultrathin atomic layer deposition film accuracy thickness controlLAM RES CORP·Filed 2015·Granted Feb 18, 2020·9 cites·19 claims
- 0390US11101129B2Ultrathin atomic layer deposition film accuracy thickness controlLAM RES CORP·Filed 2019·Granted Aug 24, 2021·3 cites·11 claims
- 0489US11646198B2Ultrathin atomic layer deposition film accuracy thickness controlLAM RES CORP·Filed 2021·Granted May 9, 2023·1 cites·8 claims
- 0586US6897149B2Method of producing electronic device materialTOKYO ELECTRON LTD·Filed 2002·Granted May 24, 2005·24 cites·34 claims
- 0685US7429539B2Nitriding method of gate oxide filmTOKYO ELECTRON LTD·Filed 2006·Granted Sep 30, 2008·7 cites·31 claims
- 0785US7217659B2Process for producing materials for electronic deviceTOKYO ELECTRON LTD·Filed 2005·Granted May 15, 2007·5 cites·44 claims
- 0884US7723241B2Plasma processing method and computer storage mediumTOKYO ELECTRON LTD·Filed 2006·Granted May 25, 2010·8 cites·8 claims
- 0981US8288833B2Semiconductor device and manufacturing method thereofMATSUYAMA SEIJI·Filed 2010·Granted Oct 16, 2012·6 cites·11 claims
- 1081US7897518B2Plasma processing method and computer storage mediumTOKYO ELECTRON LTD·Filed 2010·Granted Mar 1, 2011·4 cites·7 claims
- 1181US7226874B2Substrate processing methodTOKYO ELECTRON LTD·Filed 2004·Granted Jun 5, 2007·24 cites·17 claims
- 1274US8021987B2Method of modifying insulating filmTOKYO ELECTRON LTD·Filed 2009·Granted Sep 20, 2011·3 cites·24 claims
- 1374US7662236B2Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2008·Granted Feb 16, 2010·3 cites·8 claims
- 1472US11670503B2Method of atomic layer depositionLAM RES CORP·Filed 2020·Granted Jun 6, 2023·0 cites·15 claims
- 1572US7655574B2Method of modifying insulating filmTOKYO ELECTRON LTD·Filed 2005·Granted Feb 2, 2010·3 cites·14 claims
- 1671US7226848B2Substrate treating method and production method for semiconductor deviceTOKYO ELECTRON LTD·Filed 2002·Granted Jun 5, 2007·11 cites·20 claims
- 1768US7446052B2Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2003·Granted Nov 4, 2008·10 cites·18 claims
- 1867US7517751B2Substrate treating methodTOKYO ELECTRON LTD·Filed 2005·Granted Apr 14, 2009·2 cites·5 claims
- 1967US7250375B2Substrate processing method and material for electronic deviceTOKYO ELECTRON LTD·Filed 2002·Granted Jul 31, 2007·9 cites·51 claims
- 2066US7232772B2Substrate processing methodTOKYO ELECTRON LTD·Filed 2004·Granted Jun 19, 2007·7 cites·11 claims
- 2163US2007218687A1Process for producing materials for electronic deviceTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 2258US2010096707A1Method for Forming Insulation FilmTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 2355US2009163036A1Substrate Treating MethodTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 2452US7759598B2Substrate treating method and production method for semiconductor deviceTOKYO ELECTRON LTD·Filed 2007·Granted Jul 20, 2010·0 cites·3 claims
- 2552US2007204959A1Substrate processing method and material for electronic deviceTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 2652US2007224837A1Method for producing material of electronic deviceTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 2749US7622402B2Method for forming underlying insulation filmTOKYO ELECTRON LTD·Filed 2003·Granted Nov 24, 2009·2 cites·19 claims
- 2849US2005233599A1Method for producing material of electronic deviceMAKOTO ANDO·Filed 2005·Application pending·0 cites
- 2948US8183165B2Plasma processing methodMATSUYAMA SEIJI·Filed 2011·Granted May 22, 2012·0 cites·9 claims
- 3046US7883746B2Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformityPANASONIC CORP·Filed 2007·Granted Feb 8, 2011·0 cites·16 claims
- 3145US2008017954A1Semiconductor device and semiconductor device manufacturing methodSUZUKI JUN·Filed 2007·Application pending·0 cites
- 3240US2004142577A1Method for producing material of electronic deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →