Inventor · disambiguated record
Shan Sun
Also filed as: SUN SHAN · SUN SHAN-KUO
36 granted patents·5 pending applications·345 citations·filing 1998–2025
97Inventor score
Files withCYPRESS SEMICONDUCTOR CORP18RAMTRON INT CORP7FUJITSU LTD4SUN SHAN4FEINSTEIN INSTITUTES FOR MEDICAL RESEARCH2
Top patents by PatentIndex Score
41 records- 0196US9514797B1Hybrid reference generation for ferroelectric random access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 6, 2016·21 cites·20 claims
- 0294US10074422B12T1C ferro-electric random access memory cellCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Sep 11, 2018·25 cites·20 claims
- 0392US9305995B1Methods of fabricating an F-RAMCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Apr 5, 2016·8 cites·20 claims
- 0489US6423592B1PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitorRAMTRON INT CORP·Filed 2001·Granted Jul 23, 2002·49 cites·23 claims
- 0588US9624094B1Hydrogen barriers in a copper interconnect processCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Apr 18, 2017·6 cites·20 claims
- 0687US6495413B2Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuitsRAMTRON INT CORP·Filed 2001·Granted Dec 17, 2002·49 cites·11 claims
- 0782US8916434B2Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM processSUN SHAN·Filed 2012·Granted Dec 23, 2014·6 cites·11 claims
- 0880US8552515B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing stepsSUN SHAN·Filed 2012·Granted Oct 8, 2013·5 cites·71 claims
- 0980US6830938B1Method for improving retention reliability of ferroelectric RAMTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 14, 2004·26 cites·23 claims
- 1079US8518792B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structureSUN SHAN·Filed 2012·Granted Aug 27, 2013·5 cites·33 claims
- 1177US9515075B1Method for fabricating ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrierCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 6, 2016·2 cites·20 claims
- 1275US9548348B2Methods of fabricating an F-RAMCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jan 17, 2017·4 cites·14 claims
- 1375US9111944B2Method of fabricating a ferroelectric capacitorCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Aug 18, 2015·4 cites·9 claims
- 1475US7313010B2Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 2006·Granted Dec 25, 2007·9 cites·23 claims
- 1575US6238933B1Polarization method for minimizing the effects of hydrogen damage on ferroelectric thin film capacitorsRAMTRON INT CORP·Filed 1999·Granted May 29, 2001·38 cites·20 claims
- 1673US6674633B2Process for producing a strontium ruthenium oxide protective layer on a top electrodeFUJITSU LTD·Filed 2001·Granted Jan 6, 2004·19 cites·8 claims
- 1772US6627930B1Ferroelectric thin film capacitors having multi-layered crystallographic texturesFUJITSU LTD·Filed 2000·Granted Sep 30, 2003·18 cites·9 claims
- 1867US9318693B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structureCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Apr 19, 2016·1 cites·20 claims
- 1967US7116572B2Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 2004·Granted Oct 3, 2006·14 cites·12 claims
- 2067US2025313600A1Interferon regulatory factor 5 inhibitors and uses thereofFEINSTEIN INSTITUTES FOR MEDICAL RESEARCH·Filed 2025·Application pending·0 cites
- 2165US9240440B1Method minimizing imprint through packaging of F-RAMCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jan 19, 2016·2 cites·15 claims
- 2263US12351610B2Interferon regulatory factor 5 inhibitors and uses thereofFEINSTEIN INSTITUTES FOR MEDICAL RESEARCH·Filed 2020·Granted Jul 8, 2025·0 cites·11 claims
- 2361US9006808B2Eliminating shorting between ferroelectric capacitors and metal contacts during ferroelectric random access memory fabricationCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Apr 14, 2015·1 cites·19 claims
- 2461US6617626B2Ferroelectric semiconductor memory device and a fabrication process thereofFUJITSU LTD·Filed 2001·Granted Sep 9, 2003·7 cites·6 claims
- 2560US6203608B1Ferroelectric thin films and solutions: compositionsRAMTRON INT CORP·Filed 1998·Granted Mar 20, 2001·24 cites·10 claims
- 2654US10304731B2Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted May 28, 2019·0 cites·17 claims
- 2754US10079240B2Ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrierCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Sep 18, 2018·0 cites·20 claims
- 2854US9595576B2Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM processCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Mar 14, 2017·0 cites·18 claims
- 2954US2024132480A1Inhibitors of mycobacterium tuberculosis lipoamide dehydrogenaseUNIV CORNELL·Filed 2022·Application pending·0 cites
- 3053US8728901B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitorsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted May 20, 2014·0 cites·20 claims
- 3152US2015206893A1Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2014·Application pending·0 cites
- 3251US10347829B1Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing stepsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jul 9, 2019·0 cites·14 claims
- 3350US9646976B2Ferroelectric random-access memory with pre-patterned oxygen barrierCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted May 9, 2017·0 cites·20 claims
- 3447US8518791B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitorsSUN SHAN·Filed 2012·Granted Aug 27, 2013·0 cites·30 claims
- 3546US10332596B22T1C ferro-electric random access memory cellCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Jun 25, 2019·0 cites·20 claims
- 3646US6777287B2Ferroelectric semiconductor memory device and a fabrication process thereofFUJITSU LTD·Filed 2003·Granted Aug 17, 2004·1 cites·14 claims
- 3743US8081500B2Method for mitigating imprint in a ferroelectric memoryTAYLOR CRAIG·Filed 2009·Granted Dec 20, 2011·1 cites·7 claims
- 3838US8842460B2Method for improving data retention in a 2T/2C ferroelectric memoryRAMTRON INT CORP·Filed 2012·Granted Sep 23, 2014·0 cites·14 claims
- 3936US8462938B2Power source circuit for use in digital subscriber line modemSUN SHAN-KUO·Filed 2010·Granted Jun 11, 2013·0 cites·20 claims
- 4036US2003071294A1Process and structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuitsFiled 2002·Application pending·0 cites
- 4135US2001016229A1Ferroelectric thin films and solutions: compositions and processingFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →