Inventor · disambiguated record
Soo Doo Chae
Also filed as: CHAE SOO-DOO
49 granted patents·18 pending applications·448 citations·filing 2000–2025
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD28TOKYO ELECTRON LTD27TEL EPION INC4CHAE SOO-DOO2HYUNDAI ELECTRONICS IND1
Top patents by PatentIndex Score
67 records- 0196US7646041B2Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·59 cites·12 claims
- 0293US11915931B2Extreme ultraviolet lithography patterning methodTOKYO ELECTRON LTD·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
- 0393US9012974B2Vertical memory devices and methods of manufacturing the sameCHAE SOO-DOO·Filed 2011·Granted Apr 21, 2015·36 cites·14 claims
- 0493US7345898B2Complementary nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·22 cites·25 claims
- 0591US6949793B2Memory device with quantum dot and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 27, 2005·50 cites·8 claims
- 0691US6936884B2Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memorySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 30, 2005·67 cites·32 claims
- 0790US10770294B2Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistanceTOKYO ELECTRON LTD·Filed 2019·Granted Sep 8, 2020·6 cites·21 claims
- 0890US9343672B2Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devicesPARK CHAN-JIN·Filed 2012·Granted May 17, 2016·10 cites·31 claims
- 0989US10453749B2Method of forming a self-aligned contact using selective SiO2 depositionTOKYO ELECTRON LTD·Filed 2018·Granted Oct 22, 2019·9 cites·19 claims
- 1083US12494369B2Extreme ultraviolet lithography patterning methodTOKYO ELECTRON LTD·Filed 2024·Granted Dec 9, 2025·0 cites·20 claims
- 1183US7259068B2Memory device with quantum dot and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 21, 2007·8 cites·18 claims
- 1282US6670670B2Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 30, 2003·28 cites·18 claims
- 1381US7858464B2Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 28, 2010·7 cites·17 claims
- 1481US7767502B2Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·8 cites·17 claims
- 1579US7250653B2SONOS memory device having nano-sized trap elementsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 31, 2007·21 cites·5 claims
- 1679US7187030B2SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 6, 2007·21 cites·16 claims
- 1778US10217670B2Wrap-around contact integration schemeTOKYO ELECTRON LTD·Filed 2017·Granted Feb 26, 2019·2 cites·20 claims
- 1877US6946346B2Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage elementSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·20 cites·30 claims
- 1976US7420256B2Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 2, 2008·18 cites·34 claims
- 2074US8139387B2Method of erasing a memory device including complementary nonvolatile memory devicesPARK YOON-DONG·Filed 2010·Granted Mar 20, 2012·3 cites·10 claims
- 2174US7405126B2Memory device with quantum dot and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 29, 2008·4 cites·18 claims
- 2272US10923392B2Interconnect structure and method of forming the sameTOKYO ELECTRON LTD·Filed 2019·Granted Feb 16, 2021·1 cites·11 claims
- 2369US10580691B2Method of integrated circuit fabrication with dual metal power railTOKYO ELECTRON LTD·Filed 2018·Granted Mar 3, 2020·1 cites·19 claims
- 2468US7531870B2SONOS memory device having nano-sized trap elementsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·3 cites·14 claims
- 2566US2022246626A1Raised pad formations for contacts in three-dimensional structures on microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2664US12256558B2Technologies for fabricating a 3D memory structureTOKYO ELECTRON LTD·Filed 2022·Granted Mar 18, 2025·0 cites·14 claims
- 2764US11380697B2Raised pad formations for contacts in three-dimensional structures on microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2020·Granted Jul 5, 2022·0 cites·9 claims
- 2864US9875947B2Method of surface profile correction using gas cluster ion beamTEL EPION INC·Filed 2016·Granted Jan 23, 2018·1 cites·20 claims
- 2964US7629244B2Method of fabricating a single electron transistor having memory functionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 8, 2009·6 cites·5 claims
- 3063US7176488B2Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 13, 2007·9 cites·6 claims
- 3162US7105874B2Single electron transistor having memory functionSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·14 cites·37 claims
- 3262US2025164891A1Layer stack for extreme ultraviolet lithographyTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 3362US2025185259A1Technologies for fabricating a 3d memory structureTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3461US12507408B2Method and structures to reduce resistivity in three-dimensional structures for microelectronic workpieces using material deposited in recesses at edges of holes in a multilayer stackTOKYO ELECTRON LTD·Filed 2021·Granted Dec 23, 2025·0 cites·20 claims
- 3560US12432901B2Technologies for fabricating a vertical DRAM structureTOKYO ELECTRON LTD·Filed 2022·Granted Sep 30, 2025·0 cites·13 claims
- 3660US7719871B2Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 18, 2010·1 cites·10 claims
- 3759US8080839B2Electro-mechanical transistorTIWARI SANDIP·Filed 2009·Granted Dec 20, 2011·2 cites·14 claims
- 3859US2025311241A1Integration method of vertical dram with peripheral circuitTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3959US2025246481A1Contact patterningTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 4056US12193231B2Fabricating three-dimensional semiconductor structuresTOKYO ELECTRON LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 4155US2025087628A1Method of surface modification for wafer bondingTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 4253US10978307B2Deposition processTOKYO ELECTRON LTD·Filed 2020·Granted Apr 13, 2021·0 cites·20 claims
- 4353US7825459B2Method of operating a SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 2, 2010·0 cites·20 claims
- 4453US2024071808A1Methods for forming semiconductor devices with isolation structuresTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 4552US11990425B2Stress relief in semiconductor wafersTOKYO ELECTRON LTD·Filed 2021·Granted May 21, 2024·0 cites·20 claims
- 4652US10541174B2Interconnect structure and method of forming the sameTOKYO ELECTRON LTD·Filed 2018·Granted Jan 21, 2020·0 cites·9 claims
- 4751US7759196B2Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 20, 2010·0 cites·12 claims
- 4851US6664123B2Method for etching metal layer on a scale of nanometersSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 16, 2003·3 cites·9 claims
- 4951US2023075263A1Wafer bonding method using selective deposition and surface treatmentTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 5049US2009068808A1Method of manufacturing a nonvolatile semiconductor memory device having a gate stackSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →