Inventor · disambiguated record
Sonam D. Sherpa
Also filed as: SHERPA SONAM · SHERPA SONAM D · SHERPA SONAM DORJE
19 granted patents·17 pending applications·14 citations·filing 2015–2024
89Inventor score
Top patents by PatentIndex Score
36 records- 0182US10446407B2Method of preferential silicon nitride etching using sulfur hexafluorideTOKYO ELECTRON LTD·Filed 2018·Granted Oct 15, 2019·3 cites·14 claims
- 0277US10818507B2Method of etching silicon nitride layers for the manufacture of microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2019·Granted Oct 27, 2020·2 cites·21 claims
- 0377US10192743B2Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structuresTOKYO ELECTRON LTD·Filed 2017·Granted Jan 29, 2019·2 cites·17 claims
- 0475US10770305B2Method of atomic layer etching of oxideTOKYO ELECTRON LTD·Filed 2019·Granted Sep 8, 2020·1 cites·20 claims
- 0575US9881807B2Method for atomic layer etchingTOKYO ELECTRON LTD·Filed 2016·Granted Jan 30, 2018·2 cites·20 claims
- 0674US10304688B2Method of quasi-atomic layer etching of silicon nitrideTOKYO ELECTRON LTD·Filed 2018·Granted May 28, 2019·1 cites·17 claims
- 0769US10446405B2Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structuresTOKYO ELECTRON LTD·Filed 2018·Granted Oct 15, 2019·1 cites·19 claims
- 0869US10431470B2Method of quasi-atomic layer etching of silicon nitrideTOKYO ELECTRON LTD·Filed 2018·Granted Oct 1, 2019·1 cites·19 claims
- 0969US10373828B2Method of sidewall image transferTOKYO ELECTRON LTD·Filed 2017·Granted Aug 6, 2019·1 cites·20 claims
- 1065US11658037B2Method of atomic layer etching of oxideTOKYO ELECTRON LTD·Filed 2020·Granted May 23, 2023·0 cites·9 claims
- 1161US10515814B2Method of quasi-atomic layer etching of silicon nitrideTOKYO ELECTRON LTD·Filed 2019·Granted Dec 24, 2019·0 cites·20 claims
- 1261US2025323053A1Controlled etch of silicon nitride materialAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1360US2025279283A1Selective etching of alternating layers of silicon oxide and silicon nitride for high aspect ratio contactsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1460US2025279284A1Removal of organic material from high aspect ratio structuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1560US2025210361A1Electron-Stimulated Etching of SiliconAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1659US2025210367A1Atomic layer etching of silicon oxide at cryogenic temperatureAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1759US2025308881A1Silicon etch byproduct removalAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1859US2025118557A1Selective hardmask etch for semiconductor processingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1959US2025201573A1Methods for reducing photoresist and carbon etch rates in an icp process chamber using a silicon-based chamber pre-coatAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2059US2025253130A1Temporal control of plasma processingAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2159US2025118570A1Bow mitigation in high aspect ratio oxide and nitride etchesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2258US2025112056A1Line edge roughness (ler) improvement of resist patternsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2358US2025069895A1Methods of etching silicon-and-oxygen-containing features at low temperaturesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2457US10312102B2Method of quasi-atomic layer etching of silicon nitrideTOKYO ELECTRON LTD·Filed 2017·Granted Jun 4, 2019·0 cites·19 claims
- 2557US2025095984A1In-situ sidewall passivation toward the bottom of high aspect ratio featuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2656US2025022714A1Cyclic etch of silicon oxide and silicon nitrideAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2753US2025201569A1Etching substrates using vapor adsorptionAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2850US10991594B2Method for area-selective etching of silicon nitride layers for the manufacture of microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2019·Granted Apr 27, 2021·0 cites·21 claims
- 2949US10381235B2Method of selective silicon nitride etchingTOKYO ELECTRON LTD·Filed 2017·Granted Aug 13, 2019·0 cites·14 claims
- 3048US10658192B2Selective oxide etching method for self-aligned multiple patterningTOKYO ELECTRON LTD·Filed 2018·Granted May 19, 2020·0 cites·20 claims
- 3148US10607852B2Selective nitride etching method for self-aligned multiple patterningTOKYO ELECTRON LTD·Filed 2018·Granted Mar 31, 2020·0 cites·20 claims
- 3246US10937662B2Method of isotropic etching of silicon oxide utilizing fluorocarbon chemistryTOKYO ELECTRON LTD·Filed 2019·Granted Mar 2, 2021·0 cites·17 claims
- 3346US10699911B2Method of conformal etching selective to other materialsTOKYO ELECTRON LTD·Filed 2018·Granted Jun 30, 2020·0 cites·12 claims
- 3441US9530626B2Method and apparatus for ESC charge control for wafer clampingTOKYO ELECTRON LTD·Filed 2015·Granted Dec 27, 2016·0 cites·20 claims
- 3538US2017345667A1Method of silicon extraction using a hydrogen plasmaTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
- 3638US2017345673A1Method of selective silicon oxide etchingTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Sonam D. Sherpa files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →