Inventor · disambiguated record
Stephan Kruegel
Also filed as: KRUEGEL STEPHAN
13 granted patents·4 pending applications·176 citations·filing 2001–2013
92Inventor score
Files withADVANCED MICRO DEVICES INC11GLOBALFOUNDRIES INC2HEMPEL KLAUS1LENSKI MARKUS1PRUEFER EKKEHARD1
Top patents by PatentIndex Score
17 records- 0192US7332384B2Technique for forming a substrate having crystalline semiconductor regions of different characteristicsADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 19, 2008·32 cites·17 claims
- 0290US8048792B2Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder materialGLOBALFOUNDRIES INC·Filed 2010·Granted Nov 1, 2011·14 cites·19 claims
- 0381US6566718B2Field effect transistor with an improved gate contact and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·33 cites·32 claims
- 0478US6812115B2Method of filling an opening in a material layer with an insulating materialADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·26 cites·59 claims
- 0573US7358150B2Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 15, 2008·7 cites·18 claims
- 0673US6821887B2Method of forming a metal silicide gate in a standard MOS process sequenceADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·18 cites·45 claims
- 0769US8735270B2Method for making high-K metal gate electrode structures by separate removal of placeholder materialsGLOBALFOUNDRIES INC·Filed 2013·Granted May 27, 2014·2 cites·20 claims
- 0867US6849516B2Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·11 cites·28 claims
- 0966US6943088B2Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner roundingADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 13, 2005·14 cites·30 claims
- 1065US6798028B2Field effect transistor with reduced gate delay and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 28, 2004·12 cites·23 claims
- 1159US6703278B2Method of forming layers of oxide on a surface of a substrateADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 9, 2004·7 cites·96 claims
- 1242US2011101470A1High-k metal gate electrode structures formed by separate removal of placeholder materials in transistors of different conductivity typeHEMPEL KLAUS·Filed 2010·Application pending·0 cites
- 1341US7858526B2Method of patterning gate electrodes by reducing sidewall angles of a mask layerADVANCED MICRO DEVICES INC·Filed 2007·Granted Dec 28, 2010·0 cites·17 claims
- 1440US2005098818A1Drain/source extension structure of a field effect transistor including doped high-k sidewall spacersADVANCED MICRO DEVICES INC·Filed 2004·Application pending·0 cites
- 1540US2009108415A1Increasing etch selectivity during the patterning of a contact structure of a semiconductor deviceLENSKI MARKUS·Filed 2008·Application pending·0 cites
- 1638US8697530B2Drain/source extension structure of a field effect transistor with reduced boron diffusionPRUEFER EKKEHARD·Filed 2007·Granted Apr 15, 2014·0 cites·20 claims
- 1736US2004038495A1Method of providing a thick thermal oxide in trench isolationFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →