Inventor · disambiguated record
Takaaki Iwai
Also filed as: IWAI TAKAAKI
15 granted patents·14 pending applications·223 citations·filing 2012–2023
92Inventor score
Top patents by PatentIndex Score
29 records- 0197US10347654B1Three-dimensional memory device employing discrete backside openings and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 9, 2019·61 cites·12 claims
- 0296US10615172B2Three-dimensional memory device having double-width staircase regions and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 7, 2020·20 cites·15 claims
- 0396US10290650B1Self-aligned tubular electrode portions inside memory openings for drain select gate electrodes in a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·77 cites·20 claims
- 0495US11114459B2Three-dimensional memory device containing width-modulated connection strips and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 7, 2021·15 cites·23 claims
- 0595US10985176B2Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 20, 2021·14 cites·14 claims
- 0693US12058854B2Three-dimensional memory device with isolated source strips and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 6, 2024·2 cites·20 claims
- 0793US10950627B1Three-dimensional memory device including split memory cells and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 16, 2021·12 cites·20 claims
- 0893US10403639B2Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 3, 2019·10 cites·20 claims
- 0991US10943917B2Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 9, 2021·8 cites·13 claims
- 1083US12127406B2Three-dimensional memory device containing self-aligned isolation strips and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 22, 2024·1 cites·5 claims
- 1172US2024179905A1Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openingsSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1272US2024414916A1Three-dimensional memory device including inclined word line contact strips and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1371US9331139B2Ruthenium film formation method and storage mediumTOKYO ELECTRON LTD·Filed 2014·Granted May 3, 2016·2 cites·12 claims
- 1471US2024178129A1Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openingsSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1569US10879262B2Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 29, 2020·1 cites·13 claims
- 1658US2025024672A1Three-dimensional memory device including horizontal semiconductor channels and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1757US2024334698A1Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1857US2024334697A1Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1956US2025024681A1Three-dimensional memory device having controlled lateral isolation trench depth and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2056US2024196612A1Three-dimensional memory devices with lateral block isolation structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2155US2024194262A1Three-dimensional memory devices with lateral block isolation structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2255US2024381639A1Three-dimensional memory device with layer contact via structures located in a memory array region and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2353US11398488B2Three-dimensional memory device including through-memory-level via structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 26, 2022·0 cites·14 claims
- 2453US2024407166A1Three-dimensional memory devices including self-aligned source-channel junctions and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2547US12513899B2Three-dimensional memory device containing source rails and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 30, 2025·0 cites·11 claims
- 2645US11515317B2Three-dimensional memory device including through-memory-level via structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 29, 2022·0 cites·15 claims
- 2742US2020357815A1A three-dimensional memory device having a backside contact via structure with a laterally bulging portion at a level of source contact layerSANDISK TECHNOLOGIES LLC·Filed 2019·Application pending·0 cites
- 2833US2013115367A1Method for forming ruthenium oxide filmTOKYO ELECTRON LTD·Filed 2012·Application pending·0 cites
- 2932US2015279705A1Microwave Heating Method and Microwave Heating ApparatusTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Takaaki Iwai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →