Inventor · disambiguated record
Takeshi Sonehara
Also filed as: SONEHARA TAKESHI
33 granted patents·16 pending applications·122 citations·filing 2009–2024
96Inventor score
Top patents by PatentIndex Score
49 records- 0196US10170570B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Jan 1, 2019·22 cites·20 claims
- 0293US9601370B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2015·Granted Mar 21, 2017·13 cites·12 claims
- 0391US9711515B1Method of manufacturing semiconductor memory deviceTOSHIBA KK·Filed 2016·Granted Jul 18, 2017·7 cites·10 claims
- 0490US2025038007A1Nonvolatile semiconductor memory device and method of manufacturing the sameKIOXIA CORP·Filed 2024·Application pending·0 cites
- 0589US8907318B2Resistance change memorySONEHARA TAKESHI·Filed 2012·Granted Dec 9, 2014·6 cites·10 claims
- 0688US8546779B2Resistance change memory and manufacturing method thereofSONEHARA TAKESHI·Filed 2010·Granted Oct 1, 2013·11 cites·15 claims
- 0787US12142486B2Nonvolatile semiconductor memory device and method of manufacturing the sameKIOXIA CORP·Filed 2023·Granted Nov 12, 2024·0 cites·13 claims
- 0884US10312251B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Granted Jun 4, 2019·4 cites·12 claims
- 0984US9704801B1Semiconductor memory deviceTOSHIBA KK·Filed 2016·Granted Jul 11, 2017·5 cites·15 claims
- 1084US8927955B2Resistance change memorySONEHARA TAKESHI·Filed 2011·Granted Jan 6, 2015·9 cites·16 claims
- 1184US8507887B2Resistance change memory and method of manufacturing the sameSONEHARA TAKESHI·Filed 2010·Granted Aug 13, 2013·7 cites·18 claims
- 1284US8481988B2Resistance change memory and manufacturing method thereofSONEHARA TAKESHI·Filed 2010·Granted Jul 9, 2013·7 cites·11 claims
- 1381US10008510B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2015·Granted Jun 26, 2018·3 cites·10 claims
- 1480US10141327B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Nov 27, 2018·3 cites·15 claims
- 1580US10121796B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Nov 6, 2018·3 cites·9 claims
- 1680US9437601B1Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Sep 6, 2016·3 cites·14 claims
- 1780US9203021B2Resistance change memory and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Dec 1, 2015·3 cites·11 claims
- 1875US9112147B2Semiconductor memory deviceTOSHIBA KK·Filed 2014·Granted Aug 18, 2015·2 cites·14 claims
- 1975US2021202263A1Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2021·Application pending·0 cites
- 2073US10957556B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2020·Granted Mar 23, 2021·0 cites·34 claims
- 2171US9048176B2Nonvolatile storage deviceSONEHARA TAKESHI·Filed 2012·Granted Jun 2, 2015·2 cites·7 claims
- 2269US10559586B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Feb 11, 2020·1 cites·11 claims
- 2369US8987696B2Resistance change memory and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Mar 24, 2015·2 cites·15 claims
- 2467US8723150B2Semiconductor memory device having a reversibly variable resistance layerSONEHARA TAKESHI·Filed 2012·Granted May 13, 2014·1 cites·15 claims
- 2566US10615049B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Apr 7, 2020·0 cites·12 claims
- 2665US9991276B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Jun 5, 2018·1 cites·9 claims
- 2765US8325535B2Nonvolatile semiconductor storage deviceSONEHARA TAKESHI·Filed 2011·Granted Dec 4, 2012·3 cites·20 claims
- 2863US9893079B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2015·Granted Feb 13, 2018·1 cites·18 claims
- 2958US10192753B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2015·Granted Jan 29, 2019·0 cites·17 claims
- 3058US9123747B2Nonvolatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2014·Granted Sep 1, 2015·1 cites·11 claims
- 3156US10438970B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Oct 8, 2019·0 cites·20 claims
- 3253US10490640B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Nov 26, 2019·0 cites·12 claims
- 3353US9230646B2Nonvolatile semiconductor memory device and control method thereofTOSHIBA KK·Filed 2013·Granted Jan 5, 2016·1 cites·20 claims
- 3453US9019748B2Semiconductor memory device and operation method thereofTOSHIBA KK·Filed 2013·Granted Apr 28, 2015·1 cites·11 claims
- 3551US2011260131A1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2011·Application pending·0 cites
- 3650US2014070157A1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2013·Application pending·0 cites
- 3750US2010315857A1Resistance change memorySONEHARA TAKESHI·Filed 2010·Application pending·0 cites
- 3848US2013062589A1Resistance change memoryYASUTAKE NOBUAKI·Filed 2012·Application pending·0 cites
- 3947US8975149B2Resistance change memory and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Mar 10, 2015·0 cites·6 claims
- 4047US2015085562A1Resistance change memoryTOSHIBA KK·Filed 2014·Application pending·0 cites
- 4143US2010321979A1Resistance change memoryYASUTAKE NOBUAKI·Filed 2010·Application pending·0 cites
- 4243US2009243002A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Application pending·0 cites
- 4340US2012043517A1Nonvolatile semiconductor storage deviceSONEHARA TAKESHI·Filed 2011·Application pending·0 cites
- 4438US2018269226A1Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2018·Application pending·0 cites
- 4538US2015109868A1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 4637US2017271362A1Semiconductor memory deviceTOSHIBA KK·Filed 2016·Application pending·0 cites
- 4737US2017018566A1Semiconductor memory deviceTOSHIBA KK·Filed 2016·Application pending·0 cites
- 4834US2012025160A1Nonvolatile memory deviceSONEHARA TAKESHI·Filed 2011·Application pending·0 cites
- 4934US2016079255A1Non-volatile semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →