Inventor · disambiguated record
Tetsuya Nishizuka
Also filed as: NISHIZUKA TETSUYA
15 granted patents·21 pending applications·115 citations·filing 2004–2025
90Inventor score
Top patents by PatentIndex Score
36 records- 0194US8809199B2Method of etching features in silicon nitride filmsNISHIZUKA TETSUYA·Filed 2011·Granted Aug 19, 2014·44 cites·19 claims
- 0288US7396431B2Plasma processing system for treating a substrateTOKYO ELECTRON LTD·Filed 2004·Granted Jul 8, 2008·50 cites·60 claims
- 0375US8343308B2Ceiling plate and plasma process apparatusTOKYO ELECTRON LTD·Filed 2008·Granted Jan 1, 2013·4 cites·6 claims
- 0471US2025174466A1Substrate processing method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 0571US2025164886A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 0670US8753527B2Plasma etching method and plasma etching apparatusNISHIZUKA TETSUYA·Filed 2009·Granted Jun 17, 2014·3 cites·11 claims
- 0769US8480848B2Plasma processing apparatusTIAN CAIZHONG·Filed 2006·Granted Jul 9, 2013·1 cites·8 claims
- 0869US7842617B2Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2005·Granted Nov 30, 2010·3 cites·5 claims
- 0967US9048182B2Semiconductor device manufacturing methodTOKYO ELECTRON LTD·Filed 2014·Granted Jun 2, 2015·1 cites·7 claims
- 1066US12456628B2Substrate processing method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2023·Granted Oct 28, 2025·0 cites·19 claims
- 1165US8980048B2Plasma etching apparatusTOKYO ELECTRON LTD·Filed 2014·Granted Mar 17, 2015·1 cites·5 claims
- 1262US2025349519A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 1361US2024143870A1Information processing apparatus and information processing methodTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1460US2010279512A1Plasma processing apparatus and method for plasma-processing semiconductor substrateTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 1559US7268084B2Method for treating a substrateTOKYO ELECTRON LTD·Filed 2004·Granted Sep 11, 2007·8 cites·38 claims
- 1659US2025166976A1Dry-developing resist film formed of metal-containing resistTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 1757US2025264805A1Substrate processing method, composition for forming metal-containing resist, metal-containing resist, and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 1856US8765589B2Semiconductor device manufacturing methodNISHIZUKA TETSUYA·Filed 2008·Granted Jul 1, 2014·0 cites·7 claims
- 1955US2009215274A1Plasma processing apparatus and plasma processing methodTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 2055US2023377899A1Plasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2154US2025226222A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 2254US2025226223A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 2354US2013065399A1Plasma processing methodTOKYO ELECTRON LTD·Filed 2012·Application pending·0 cites
- 2454US2025224683A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 2553US9362135B2Semiconductor device manufacturing methodTOKYO ELECTRON LTD·Filed 2015·Granted Jun 7, 2016·0 cites·7 claims
- 2653US2025210328A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 2752US2014080311A1Plasma processing methodTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 2850US2025149299A1Plasma processing system, assistance device, assistance method, and assistance programTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 2950US2013081763A1Ceiling plate and plasma process apparatusTOKYO ELECTRON LTD·Filed 2012·Application pending·0 cites
- 3044US2009137125A1Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 3143US8298955B2Plasma etching methodNISHIZUKA TETSUYA·Filed 2007·Granted Oct 30, 2012·0 cites·5 claims
- 3243US2010243605A1Etching method, etching apparatus, computer program and storage mediumTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 3338US8969210B2Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing methodNOZAWA TOSHIHISA·Filed 2011·Granted Mar 3, 2015·0 cites·6 claims
- 3438US8267040B2Plasma processing apparatus and plasma processing methodISHIBASHI KIYOTAKA·Filed 2005·Granted Sep 18, 2012·0 cites·2 claims
- 3537US2013344702A1Method of etching silicon nitride filmsNISHIZUKA TETSUYA·Filed 2012·Application pending·0 cites
- 3631US2015294839A1Plasma processing apparatus and plasma processing methodTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →