Inventor · disambiguated record
Teng-Chun Tsai
Also filed as: TSAI TENG-CHUN
212 granted patents·68 pending applications·1,703 citations·filing 1996–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD139UNITED MICROELECTRONICS CORP63TAIWAN SEMICONDUCTOR MFG11CHEN NENG-KUO6CHEN JEI-MING4
Top patents by PatentIndex Score
280 records- 0198US11545400B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·4 cites·20 claims
- 0298US10490458B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·18 cites·20 claims
- 0398US9502265B1Vertical gate all around (VGAA) transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·938 cites·20 claims
- 0498US9224833B2Method of forming a vertical deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·33 cites·20 claims
- 0597US10861752B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·9 cites·20 claims
- 0696US10529833B2Integrated circuit with a fin and gate structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·11 cites·20 claims
- 0796US8441072B2Non-planar semiconductor structure and fabrication method thereofTSAI SHIH-HUNG·Filed 2011·Granted May 14, 2013·27 cites·19 claims
- 0895US11664268B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 0995US8889497B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 18, 2014·22 cites·20 claims
- 1094US11916131B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 27, 2024·2 cites·20 claims
- 1194US10510580B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·8 cites·20 claims
- 1294US9812358B1FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·13 cites·20 claims
- 1394US9768303B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·7 cites·20 claims
- 1494US8779526B2Semiconductor deviceHSU CHUN-WEI·Filed 2011·Granted Jul 15, 2014·20 cites·11 claims
- 1593US9768024B1Multi-layer mask and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·7 cites·20 claims
- 1692US10505014B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·4 cites·17 claims
- 1791US12009253B2Semiconductor structure with staggered selective growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 11, 2024·2 cites·20 claims
- 1891US11152267B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 19, 2021·4 cites·20 claims
- 1991US11004794B2Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·20 claims
- 2091US9236446B2Barc-assisted process for planar recessing or removing of variable-height layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 12, 2016·10 cites·20 claims
- 2190US12349435B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 2290US11398381B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·2 cites·20 claims
- 2390US10727065B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·4 cites·20 claims
- 2490US9287170B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·8 cites·20 claims
- 2590US6544373B2Polishing pad for a chemical mechanical polishing processUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 8, 2003·42 cites·12 claims
- 2690US2025311351A1Vertical Device Having a Protrusion SourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2789US11495471B2Slurry compositions for chemical mechanical planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·2 cites·20 claims
- 2889US11267987B2Chemical mechanical polishing slurry composition and method of polishing metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·2 cites·20 claims
- 2989US10854728B2Vertical device having a protrusion structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 3089US10714395B2Fin isolation structure for FinFET and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·4 cites·20 claims
- 3189US10157995B2Integrating junction formation of transistors with contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 18, 2018·9 cites·20 claims
- 3289US9994736B2Slurry composition for chemical mechanical polishing of GE-based materials and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·4 cites·20 claims
- 3389US9592585B2System and method for CMP station cleanlinessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Mar 14, 2017·8 cites·12 claims
- 3489US9318447B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·17 claims
- 3589US8551829B2Method for manufacturing multi-gate transistor deviceCHIEN CHIN-CHENG·Filed 2010·Granted Oct 8, 2013·11 cites·18 claims
- 3689US8324118B2Manufacturing method of metal gate structureLIU CHIH-CHIEN·Filed 2011·Granted Dec 4, 2012·11 cites·10 claims
- 3788US9530655B2Slurry composition for chemical mechanical polishing of Ge-based materials and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 27, 2016·6 cites·20 claims
- 3888US9281192B2CMP-friendly coatings for planar recessing or removing of variable-height layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 8, 2016·7 cites·20 claims
- 3988US6593185B1Method of forming embedded capacitor structure applied to logic integrated circuitUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jul 15, 2003·45 cites·6 claims
- 4087US11018246B2Integrated circuit with a fin and gate structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·3 cites·20 claims
- 4187US9853102B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·7 cites·20 claims
- 4287US9805968B2Vertical structure having an etch stop over portion of the sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·3 cites·20 claims
- 4387US9780214B2Semiconductor device including Fin- FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·6 cites·18 claims
- 4487US9048087B2Methods for wet clean of oxide layers over epitaxial layersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·8 cites·20 claims
- 4586US11120995B2Method for forming multi-layer maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 4686US10160091B2CMP polishing head design for improving removal rate uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·2 cites·20 claims
- 4786US7238586B2Seamless trench fill method utilizing sub-atmospheric pressure chemical vapor deposition techniqueUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jul 3, 2007·16 cites·5 claims
- 4886US6831013B2Method of forming a dual damascene via by using a metal hard mask layerUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 14, 2004·36 cites·36 claims
- 4985US10847413B2Method of forming contact plugs for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·3 cites·20 claims
- 5085US10741392B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·3 cites·20 claims
Showing the top 50 of 280 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →