Inventor · disambiguated record
Thomas E. Grebs
Also filed as: GREBS THOMAS · GREBS THOMAS E · GREBS THOMAS EUGENE
52 granted patents·10 pending applications·1,356 citations·filing 1997–2023
99Inventor score
Files withFAIRCHILD SEMICONDUCTOR24TEXAS INSTRUMENTS INC16GREBS THOMAS E11INTERSIL CORP5YILMAZ HAMZA2
Top patents by PatentIndex Score
62 records- 0198US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0298US7476589B2Methods for forming shielded gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jan 13, 2009·71 cites·18 claims
- 0398US7449354B2Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etchFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Nov 11, 2008·99 cites·39 claims
- 0498US7352036B2Semiconductor power device having a top-side drain using a sinker trenchFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Apr 1, 2008·55 cites·7 claims
- 0598US6399022B1Simplified ozonator for a semiconductor wafer cleanerFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Jun 4, 2002·350 cites·28 claims
- 0696US8803207B2Shielded gate field effect transistorsGREBS THOMAS E·Filed 2011·Granted Aug 12, 2014·26 cites·20 claims
- 0796US8026558B2Semiconductor power device having a top-side drain using a sinker trenchFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Sep 27, 2011·19 cites·12 claims
- 0896US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 0995US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 1095US6433385B1MOS-gated power device having segmented trench and extended doping zone and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Aug 13, 2002·119 cites·17 claims
- 1194US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 1293US8143123B2Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devicesGREBS THOMAS E·Filed 2008·Granted Mar 27, 2012·15 cites·19 claims
- 1393US6673681B2Process for forming MOS-gated power device having segmented trench and extended doping zoneFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jan 6, 2004·79 cites·13 claims
- 1490US8148749B2Trench-shielded semiconductor deviceGREBS THOMAS E·Filed 2009·Granted Apr 3, 2012·21 cites·34 claims
- 1590US6818947B2Buried gate-field termination structureFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Nov 16, 2004·63 cites·10 claims
- 1689US9318598B2Trench MOSFET having reduced gate chargeTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 19, 2016·9 cites·8 claims
- 1789US7935577B2Method for forming shielded gate field effect transistor using spacersFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted May 3, 2011·10 cites·10 claims
- 1887US11658241B2Vertical trench gate MOSFET with integrated Schottky diodeTEXAS INSTRUMENTS INC·Filed 2018·Granted May 23, 2023·4 cites·20 claims
- 1987US7732876B2Power transistor with trench sinker for contacting the backsideFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Jun 8, 2010·7 cites·20 claims
- 2086US8884365B2Trench-gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 11, 2014·4 cites·20 claims
- 2186US8461040B2Method of forming shielded gate power transistor utilizing chemical mechanical planarizationGREBS THOMAS E·Filed 2011·Granted Jun 11, 2013·5 cites·14 claims
- 2285US9305852B1Silicon package for embedded electronic system having stacked semiconductor chipsTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 5, 2016·6 cites·13 claims
- 2383US9583611B2Trench MOSFET having reduced gate chargeTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 28, 2017·3 cites·20 claims
- 2483US9496388B2Trench MOSFET having reduced gate chargeTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 15, 2016·3 cites·20 claims
- 2582US6238981B1Process for forming MOS-gated devices having self-aligned trenchesINTERSIL CORP·Filed 1999·Granted May 29, 2001·55 cites·20 claims
- 2681US6573569B2Trench MOSFET with low gate chargeFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jun 3, 2003·35 cites·29 claims
- 2780US6680232B2Trench etch with incremental oxygen flowFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jan 20, 2004·33 cites·14 claims
- 2878US8441069B2Structure and method for forming trench-gate field effect transistor with source plugYILMAZ HAMZA·Filed 2011·Granted May 14, 2013·2 cites·20 claims
- 2978US8319290B2Trench MOS barrier schottky rectifier with a planar surface using CMP techniquesGREBS THOMAS E·Filed 2010·Granted Nov 27, 2012·4 cites·19 claims
- 3078US6602768B2MOS-gated power device with doped polysilicon body and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Aug 5, 2003·19 cites·10 claims
- 3177US8148233B2Semiconductor power device having a top-side drain using a sinker trenchGREBS THOMAS E·Filed 2011·Granted Apr 3, 2012·2 cites·14 claims
- 3277US8049276B2Reduced process sensitivity of electrode-semiconductor rectifiersFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Nov 1, 2011·6 cites·22 claims
- 3373US10438936B2Photo-sensitive silicon package embedding self-powered electronic systemTEXAS INSTRUMENTS INC·Filed 2017·Granted Oct 8, 2019·1 cites·5 claims
- 3473US6365942B1MOS-gated power device with doped polysilicon body and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Apr 2, 2002·14 cites·11 claims
- 3571US8816429B2Charge balance semiconductor devices with increased mobility structuresGREBS THOMAS E·Filed 2011·Granted Aug 26, 2014·2 cites·19 claims
- 3669US6367493B2Potted transducer array with matching network in a multiple pass configurationFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Apr 9, 2002·11 cites·5 claims
- 3768US8432000B2Trench MOS barrier schottky rectifier with a planar surface using CMP techniquesGREBS THOMAS E·Filed 2010·Granted Apr 30, 2013·2 cites·20 claims
- 3867US2023246107A1Vertical trench gate mosfet with integrated schottky diodeTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3962US11177246B2Photo-sensitive silicon package embedding self-powered electronic systemTEXAS INSTRUMENTS INC·Filed 2019·Granted Nov 16, 2021·0 cites·22 claims
- 4061US8492837B2Reduced process sensitivity of electrode-semiconductor rectifiersYEDINAK JOSEPH A·Filed 2011·Granted Jul 23, 2013·1 cites·22 claims
- 4159US2009230465A1Trench-Gate Field Effect Transistors and Methods of Forming the SameYILMAZ HAMZA·Filed 2009·Application pending·0 cites
- 4256US9859261B2Photo-sensitive silicon package embedding self-powered electronic systemTEXAS INSTRUMENTS INC·Filed 2017·Granted Jan 2, 2018·0 cites·6 claims
- 4356US8039897B2Lateral MOSFET with substrate drain connectionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Oct 18, 2011·0 cites·21 claims
- 4456US2025048721A1Sense transistor with lower spreading resistanceTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 4555US2012153384A1Semiconductor Power Device Having A Top-side Drain Using A Sinker TrenchGREBS THOMAS E·Filed 2012·Application pending·0 cites
- 4653US10153220B2Silicon package having electrical functionality by embedded passive componentsTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 11, 2018·0 cites·18 claims
- 4753US9640519B2Photo-sensitive silicon package embedding self-powered electronic systemTEXAS INSTRUMENTS INC·Filed 2015·Granted May 2, 2017·0 cites·6 claims
- 4853US2024113217A1Trench shielded transistorTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 4952US10109614B2Silicon package for embedded electronic system having stacked semiconductor chipsTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 23, 2018·0 cites·17 claims
- 5052US8502314B2Multi-level options for power MOSFETSGREBS THOMAS E·Filed 2011·Granted Aug 6, 2013·1 cites·25 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →