Inventor · disambiguated record
Tokuhisa Ohiwa
Also filed as: HAYASHI HISATAKA · OHIWA TOKUHISA
33 granted patents·14 pending applications·832 citations·filing 1990–2014
97Inventor score
Top patents by PatentIndex Score
47 records- 0195US6433297B1Plasma processing method and plasma processing apparatusTOSHIBA KK·Filed 2000·Granted Aug 13, 2002·90 cites·8 claims
- 0293US5756402AMethod of etching silicon nitride filmTOSHIBA KK·Filed 1995·Granted May 26, 1998·250 cites·18 claims
- 0390US5998100AFabrication process using a multi-layer antireflective layerTOSHIBA KK·Filed 1997·Granted Dec 7, 1999·89 cites·5 claims
- 0489US8487365B2Semiconductor device and method for manufacturing sameSASAKI TOSHIYUKI·Filed 2011·Granted Jul 16, 2013·13 cites·4 claims
- 0587US5759746AFabrication process using a thin resistTOSHIBA KK·Filed 1996·Granted Jun 2, 1998·75 cites·17 claims
- 0686US6782907B2Gas recirculation flow control method and apparatus for use in vacuum systemEBARA CORP·Filed 2002·Granted Aug 31, 2004·36 cites·16 claims
- 0786US6576562B2Manufacturing method of semiconductor device using mask pattern having high etching resistanceTOSHIBA KK·Filed 2001·Granted Jun 10, 2003·36 cites·23 claims
- 0883US6780278B2Plasma processing apparatus with reduced parasitic capacity and loss in RF powerTOSHIBA KK·Filed 2001·Granted Aug 24, 2004·16 cites·16 claims
- 0980US7628931B2Processing method for conservation of processing gasesTOKYO ELECTRON LTD·Filed 2005·Granted Dec 8, 2009·7 cites·6 claims
- 1076US7767055B2Capacitive coupling plasma processing apparatusTOKYO ELECTRON LTD·Filed 2005·Granted Aug 3, 2010·5 cites·17 claims
- 1174US5310454ADry etching methodTOSHIBA KK·Filed 1993·Granted May 10, 1994·54 cites·9 claims
- 1273US9126229B2Deposit removal methodTAHARA SHIGERU·Filed 2012·Granted Sep 8, 2015·3 cites·8 claims
- 1372US7022616B2High speed silicon etching methodTOSHIBA KK·Filed 2001·Granted Apr 4, 2006·15 cites·18 claims
- 1470US5094879AMethod of activating at least one gas to produce different charged species, selecting specific species, decelerating the species, and chemically reacting the species to form a thin filmTOSHIBA KK·Filed 1990·Granted Mar 10, 1992·24 cites·13 claims
- 1569US8211783B2Method for manufacturing semiconductor device including a patterned SiOC film as a maskSAKURAI NORIKO·Filed 2010·Granted Jul 3, 2012·4 cites·17 claims
- 1667US6911398B2Method of sequentially processing a plurality of lots each including semiconductor substratesTOSHIBA KK·Filed 2002·Granted Jun 28, 2005·10 cites·9 claims
- 1767US5874363APolycide etching with HCL and chlorineTOSHIBA KK·Filed 1996·Granted Feb 23, 1999·35 cites·10 claims
- 1866US6846750B1High precision pattern forming method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2000·Granted Jan 25, 2005·9 cites·8 claims
- 1964US8513134B2Semiconductor device producing methodOMURA MITSUHIRO·Filed 2011·Granted Aug 20, 2013·2 cites·17 claims
- 2064US6274512B1Method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2000·Granted Aug 14, 2001·11 cites·3 claims
- 2162US9177781B2Plasma processing method and manufacturing method of semiconductor deviceTAHARA SHIGERU·Filed 2011·Granted Nov 3, 2015·1 cites·8 claims
- 2262US7767582B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Aug 3, 2010·1 cites·19 claims
- 2362US6689699B2Method for manufacturing a semiconductor device using recirculation of a process gasTOSHIBA KK·Filed 2001·Granted Feb 10, 2004·8 cites·20 claims
- 2462US6420271B2Method of forming a patternTOSHIBA KK·Filed 2001·Granted Jul 16, 2002·8 cites·20 claims
- 2558US2015259788A1Sputtering apparatus and manufacturing method of magnetoresistive elementNAGAMINE MAKOTO·Filed 2014·Application pending·0 cites
- 2655US7595885B2Process monitoring system, process monitoring method, and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2008·Granted Sep 29, 2009·0 cites·4 claims
- 2755US7045462B2Method for fabricating a pattern and method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2003·Granted May 16, 2006·5 cites·20 claims
- 2853US7349088B2Process monitoring system, process monitoring method, and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted Mar 25, 2008·0 cites·4 claims
- 2950US7327455B2Process monitoring system, process monitoring method, and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2004·Granted Feb 5, 2008·2 cites·6 claims
- 3050US7285498B2Etching methodTOSHIBA KK·Filed 2004·Granted Oct 23, 2007·2 cites·19 claims
- 3149US7182879B2Plasma processing methodTOSHIBA KK·Filed 2004·Granted Feb 27, 2007·0 cites·15 claims
- 3249US6887802B2Method of manufacturing semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2003·Granted May 3, 2005·3 cites·16 claims
- 3346US5658389AThin film forming method and apparatusTOSHIBA KK·Filed 1993·Granted Aug 19, 1997·9 cites·18 claims
- 3445US2001051232A1Plasma processing methodTOSHIBA KK·Filed 2001·Application pending·0 cites
- 3545US2007227033A1Substrate transferring apparatus, substrate processing apparatus, and substrate processing methodTOSHIBA KK·Filed 2007·Application pending·0 cites
- 3645US2004238126A1Plasma processing apparatus with reduced parasitic capacity and loss in RF powerTOSHIBA KK·Filed 2004·Application pending·0 cites
- 3744US2014284308A1Plasma etching method and plasma etching apparatusTOSHIBA KK·Filed 2014·Application pending·0 cites
- 3843US2004192034A1Method of manufacturing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 2004·Application pending·0 cites
- 3940US6369423B2Semiconductor device with a thin gate stack having a plurality of insulating layersTOSHIBA KK·Filed 1998·Granted Apr 9, 2002·9 cites·28 claims
- 4038US2003181031A1Method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2002·Application pending·0 cites
- 4137US2011168205A1Substrate cleaning method and substrate cleaning apparatusTOKYO ELECTRON LTD·Filed 2011·Application pending·0 cites
- 4237US2002192972A1Plasma processingFiled 2002·Application pending·0 cites
- 4337US2004144491A1Plasma processing apparatus and plasma processing methodFiled 2003·Application pending·0 cites
- 4437US2002155724A1Dry etching method and apparatusTOSHIBA KK·Filed 2002·Application pending·0 cites
- 4535US2001015133A1Gas recovery system and gas recovery methodFiled 2000·Application pending·0 cites
- 4633US2005215062A1Method of manufacturing semiconductor deviceMIYAGAWA OSAMU·Filed 2005·Application pending·0 cites
- 4732US2004188739A1Semiconductor device including trench capacitor and manufacturing method of the sameFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →