Inventor · disambiguated record
Tomoshi Taniyama
Also filed as: TANIYAMA TOMOSHI
50 granted patents·24 pending applications·1,187 citations·filing 1993–2025
98Inventor score
Files withKOKUSAI ELECTRIC CORP32HITACHI INT ELECTRIC INC25KOKUSAI ELECTRIC CO LTD3TANIYAMA TOMOSHI3OZAKI TAKASHI2
Top patents by PatentIndex Score
74 records- 0199USD770993SReaction tubeHITACHI INT ELECTRIC INC·Filed 2016·Granted Nov 8, 2016·485 cites·1 claims
- 0296US12123091B2Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2022·Granted Oct 22, 2024·2 cites·10 claims
- 0396US10590531B1Substrate processing apparatus, and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2019·Granted Mar 17, 2020·338 cites·10 claims
- 0495US11396700B2Substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2021·Granted Jul 26, 2022·4 cites·13 claims
- 0594US10636681B2Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2018·Granted Apr 28, 2020·6 cites·17 claims
- 0693US11935762B2Substrate processing apparatus, method of manufacturing semiconductor device, and recording mediumKOKUSAI ELECTRIC CORP·Filed 2022·Granted Mar 19, 2024·3 cites·14 claims
- 0793US10550468B2Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2017·Granted Feb 4, 2020·4 cites·12 claims
- 0893US10508336B2Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2017·Granted Dec 17, 2019·7 cites·13 claims
- 0993US8043431B2Substrate processing apparatus and method for manufacturing a semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2009·Granted Oct 25, 2011·16 cites·9 claims
- 1091US10950457B2Substrate processing device, manufacturing method for semiconductor device, and reaction tubeKOKUSAI ELECTRIC CORP·Filed 2019·Granted Mar 16, 2021·5 cites·17 claims
- 1190US11450536B2Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2021·Granted Sep 20, 2022·2 cites·19 claims
- 1289US11124873B2Substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2019·Granted Sep 21, 2021·4 cites·14 claims
- 1389US8282737B2Substrate processing apparatus and method for manufacturing a semiconductor deviceOZAKI TAKASHI·Filed 2011·Granted Oct 9, 2012·4 cites·9 claims
- 1487US11104997B2Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2019·Granted Aug 31, 2021·5 cites·9 claims
- 1587US2024339337A1Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 1686US11062918B2Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2019·Granted Jul 13, 2021·2 cites·18 claims
- 1785US12062546B2Substrate processing device, manufacturing method for semiconductor device, and reaction tubeKOKUSAI ELECTRIC CORP·Filed 2021·Granted Aug 13, 2024·1 cites·18 claims
- 1885US11155920B2Substrate processing apparatus, and method for manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2020·Granted Oct 26, 2021·1 cites·16 claims
- 1985US10689758B2Substrate processing apparatus, and method for manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2018·Granted Jun 23, 2020·3 cites·14 claims
- 2083US11512392B2Substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2019·Granted Nov 29, 2022·2 cites·19 claims
- 2183US11495477B2Substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2018·Granted Nov 8, 2022·2 cites·16 claims
- 2283US10811271B2Substrate processing device, manufacturing method for semiconductor device, and reaction tubeHITACHI INT ELECTRIC INC·Filed 2014·Granted Oct 20, 2020·4 cites·12 claims
- 2381USD772824SReaction tubeHITACHI INT ELECTRIC INC·Filed 2015·Granted Nov 29, 2016·21 cites·1 claims
- 2481US2025201585A1Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2025·Application pending·0 cites
- 2581US2023016879A1Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2022·Application pending·0 cites
- 2680USD791090SReaction tubeHITACHI INT ELECTRIC INC·Filed 2016·Granted Jul 4, 2017·19 cites·1 claims
- 2780US7731797B2Substrate treating apparatus and semiconductor device manufacturing methodHITACHI INT ELECTRIC INC·Filed 2005·Granted Jun 8, 2010·7 cites·11 claims
- 2878USD747279SBoat for substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2014·Granted Jan 12, 2016·21 cites·1 claims
- 2978USD738329SBoat for substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2014·Granted Sep 8, 2015·21 cites·1 claims
- 3077USD939459SBoat for wafer processing apparatusKOKUSAI ELECTRIC CORP·Filed 2019·Granted Dec 28, 2021·15 cites·1 claims
- 3177US8057599B2Substrate processing apparatus and method for manufacturing a semiconductor deviceOZAKI TAKASHI·Filed 2004·Granted Nov 15, 2011·14 cites·15 claims
- 3277US5632820AThermal treatment furnace in a system for manufacturing semiconductorsKOKUSAI ELECTRIC CO LTD·Filed 1995·Granted May 27, 1997·52 cites·10 claims
- 3376US11456190B2Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2021·Granted Sep 27, 2022·0 cites·20 claims
- 3475US11222796B2Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2018·Granted Jan 11, 2022·1 cites·18 claims
- 3575USD734730SBoat of substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2013·Granted Jul 21, 2015·19 cites·1 claims
- 3674USD737785SBoat for substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2014·Granted Sep 1, 2015·18 cites·1 claims
- 3773US6495473B2Substrate processing apparatus and method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2002·Granted Dec 17, 2002·12 cites·4 claims
- 3871US10615061B2Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2016·Granted Apr 7, 2020·1 cites·14 claims
- 3971US9966286B2Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2016·Granted May 8, 2018·2 cites·9 claims
- 4071US2023357920A1Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory tangible mediumKOKUSAI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 4170US12065736B2Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2023·Granted Aug 20, 2024·0 cites·15 claims
- 4270US8791031B2Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2013·Granted Jul 29, 2014·2 cites·10 claims
- 4370US8172946B2Semiconductor device manufacturing apparatus and manufacturing method of semiconductor deviceTANIYAMA TOMOSHI·Filed 2006·Granted May 8, 2012·5 cites·10 claims
- 4466US2025270700A1Substrate processing apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 4565US2021254211A1Substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2021·Application pending·0 cites
- 4664US2022090258A1Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory tangible mediumKOKUSAI ELECTRIC CORP·Filed 2021·Application pending·0 cites
- 4763US9966289B2Substrate processing apparatus, method for manufacturing semiconductor device, and non-transitory computer-readable recording mediumHITACHIT KOKUSAI ELECTRIC INC·Filed 2014·Granted May 8, 2018·2 cites·10 claims
- 4862US12489010B2Substrate processing apparatus and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2021·Granted Dec 2, 2025·0 cites·19 claims
- 4959US11788188B2Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2020·Granted Oct 17, 2023·0 cites·6 claims
- 5058US5902103AVertical furnace of a semiconductor manufacturing apparatus and a boat cover thereofKOKUSAI ELECTRIC CO LTD·Filed 1996·Granted May 11, 1999·26 cites·7 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Tomoshi Taniyama files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →