Inventor · disambiguated record
Tsuo-Wen Lu
Also filed as: LU TSUO-WEN
39 granted patents·11 pending applications·491 citations·filing 2010–2024
97Inventor score
Files withUNITED MICROELECTRONICS CORP32LU TSUO-WEN6FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD4Wang shao-wei3CHEN CHIH-CHUNG1
Top patents by PatentIndex Score
50 records- 0197US11749743B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Sep 5, 2023·2 cites·12 claims
- 0297US10797157B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 6, 2020·17 cites·16 claims
- 0397US10204788B1Method of forming high dielectric constant dielectric layer by atomic layer depositionUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 12, 2019·341 cites·15 claims
- 0496US9685533B1Transistor with SiCN/SiOCN mulitlayer spacerUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 20, 2017·17 cites·6 claims
- 0596US9431483B1Nanowire and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 30, 2016·16 cites·11 claims
- 0695US11756888B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 12, 2023·2 cites·5 claims
- 0794US12057401B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2023·Granted Aug 6, 2024·1 cites·1 claims
- 0893US10217750B1Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·9 cites·4 claims
- 0992US11557645B2Semiconductor memory device and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 17, 2023·3 cites·20 claims
- 1091US11171091B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 9, 2021·4 cites·10 claims
- 1190US9871136B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 16, 2018·7 cites·17 claims
- 1290US8580625B2Metal oxide semiconductor transistor and method of manufacturing the sameLU TSUO-WEN·Filed 2011·Granted Nov 12, 2013·13 cites·26 claims
- 1390US8183118B2Method for fabricating MOS transistorLU TSUO-WEN·Filed 2010·Granted May 22, 2012·12 cites·20 claims
- 1489US9130014B2Method for fabricating shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Sep 8, 2015·8 cites·7 claims
- 1589US2024421213A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1688US8536038B2Manufacturing method for metal gate using ion implantationWang shao-wei·Filed 2011·Granted Sep 17, 2013·10 cites·35 claims
- 1787US12438092B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2024·Granted Oct 7, 2025·0 cites·1 claims
- 1887US8674452B2Semiconductor device with lower metal layer thickness in PMOS regionCHIEN CHIN-CHENG·Filed 2011·Granted Mar 18, 2014·10 cites·5 claims
- 1986US12107151B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 1, 2024·0 cites·12 claims
- 2085US10497704B2Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·3 cites·9 claims
- 2179US9882022B2Method for manufacturing transistor with SiCN/SiOCN multilayer spacerUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 30, 2018·2 cites·4 claims
- 2277US11508832B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 22, 2022·0 cites·8 claims
- 2376US9117878B2Method for manufacturing shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2012·Granted Aug 25, 2015·3 cites·19 claims
- 2475US10991810B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Apr 27, 2021·0 cites·14 claims
- 2575US9330902B1Method for forming HfOx film based on atomic layer deposition (ALD) processUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 3, 2016·2 cites·13 claims
- 2674US10056288B1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·2 cites·7 claims
- 2771US10658369B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 19, 2020·1 cites·9 claims
- 2869US11881503B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 2969US9034705B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 19, 2015·5 cites·19 claims
- 3062US8921238B2Method for processing high-k dielectric layerWang shao-wei·Filed 2011·Granted Dec 30, 2014·1 cites·14 claims
- 3161US11133320B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Sep 28, 2021·0 cites·8 claims
- 3259US10847517B2Method for forming semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 24, 2020·0 cites·8 claims
- 3357US12513888B2Memory device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·18 claims
- 3455US10373958B2Semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·0 cites·9 claims
- 3555US9735235B2Nanowire and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 15, 2017·0 cites·4 claims
- 3654US12408328B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·11 claims
- 3751US2018083141A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 3849US2014035070A1Metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 3945US9349599B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 24, 2016·0 cites·17 claims
- 4045US2012202328A1Method for fabricating mos transistorLU TSUO-WEN·Filed 2012·Application pending·0 cites
- 4143US8697508B2Semiconductor processWEN TSAI-YU·Filed 2012·Granted Apr 15, 2014·0 cites·16 claims
- 4243US8445363B2Method of fabricating an epitaxial layerLU TSUO-WEN·Filed 2011·Granted May 21, 2013·0 cites·17 claims
- 4342US2014199854A1Method of forming film on different surfacesUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 4440US8501634B2Method for fabricating gate structureWang shao-wei·Filed 2011·Granted Aug 6, 2013·0 cites·17 claims
- 4537US2012292720A1Metal gate structure and manufacturing method thereofCHEN CHIH-CHUNG·Filed 2011·Application pending·0 cites
- 4637US2012315734A1Method for fabricating semiconductor deviceYANG CHAN-LON·Filed 2011·Application pending·0 cites
- 4736US2019013204A1Method of fabricating buried word line and gate on finfetUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 4835US2012264267A1Method for fabricating mos transistorLU TSUO-WEN·Filed 2011·Application pending·0 cites
- 4935US2012309171A1Method for fabricating semiconductor deviceLU TSUO-WEN·Filed 2011·Application pending·0 cites
- 5030US2012068268A1Transistor structure and method of fabricating the sameHSIAO TSAI-FU·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →