Inventor · disambiguated record
Wayne Johnson
Also filed as: JOHNSON WAYNE · JOHNSON WAYNE L · JOHNSON WAYNE LEE
68 granted patents·15 pending applications·4,078 citations·filing 1985–2019
99Inventor score
Top patents by PatentIndex Score
83 records- 0199US6740853B1Multi-zone resistance heaterTOKYO ELECTRON LTD·Filed 2000·Granted May 25, 2004·782 cites·43 claims
- 0298US7311782B2Apparatus for active temperature control of susceptorsTOKYO ELECTRON LTD·Filed 2005·Granted Dec 25, 2007·98 cites·7 claims
- 0398US7166233B2Pulsed plasma processing method and apparatusTOKYO ELECTRON LTD·Filed 2002·Granted Jan 23, 2007·301 cites·25 claims
- 0498US6863020B2Segmented electrode apparatus for plasma processingTOKYO ELECTRON LTD·Filed 2002·Granted Mar 8, 2005·93 cites·47 claims
- 0598US6535785B2System and method for monitoring and controlling gas plasma processesTOKYO ELECTRON LTD·Filed 2001·Granted Mar 18, 2003·163 cites·18 claims
- 0698US6313584B1Electrical impedance matching system and methodTOKYO ELECTRON LTD·Filed 1998·Granted Nov 6, 2001·193 cites·53 claims
- 0798US5234529APlasma generating apparatus employing capacitive shielding and process for using such apparatusJOHNSON WAYNE L·Filed 1991·Granted Aug 10, 1993·330 cites·12 claims
- 0898US4918031AProcesses depending on plasma generation using a helical resonatorAMERICAN TELEPHONE & TELEGRAPH·Filed 1988·Granted Apr 17, 1990·238 cites·38 claims
- 0997US6392187B1Apparatus and method for utilizing a plasma density gradient to produce a flow of particlesTOKYO ELECTRON LTD·Filed 1998·Granted May 21, 2002·140 cites·31 claims
- 1097US6332961B1Device and method for detecting and preventing arcing in RF plasma systemsTOKYO ELECTRON LTD·Filed 1998·Granted Dec 25, 2001·147 cites·40 claims
- 1196US5269847AVariable rate distribution gas flow reaction chamberAPPLIED MATERIALS INC·Filed 1992·Granted Dec 14, 1993·161 cites·11 claims
- 1295US6351683B1System and method for monitoring and controlling gas plasma processesTOKYO ELECTRON LTD·Filed 1998·Granted Feb 26, 2002·105 cites·10 claims
- 1394US4789771AMethod and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatusEPSILON LP·Filed 1987·Granted Dec 6, 1988·110 cites·20 claims
- 1492US7102292B2Method and device for removing harmonics in semiconductor plasma processing systemsTOKYO ELECTRON LTD·Filed 2004·Granted Sep 5, 2006·38 cites·20 claims
- 1592US6819053B2Hall effect ion source at high current densityTOKYO ELECTRON LTD·Filed 2003·Granted Nov 16, 2004·36 cites·20 claims
- 1691US6758948B2Method and apparatus for depositing filmsTOKYO ELECTRON LTD·Filed 2002·Granted Jul 6, 2004·42 cites·28 claims
- 1791US6740842B2Radio frequency power source for generating an inductively coupled plasmaTOKYO ELECTRON LTD·Filed 2002·Granted May 25, 2004·84 cites·23 claims
- 1890US6757673B2Displaying hierarchial relationship of data accessed via subject indexTOWN COMPASS LLC·Filed 2001·Granted Jun 29, 2004·95 cites·35 claims
- 1989US7066703B2Chuck transport method and systemTOKYO ELECTRON LTD·Filed 2002·Granted Jun 27, 2006·44 cites·16 claims
- 2089US4798165AApparatus for chemical vapor deposition using an axially symmetric gas flowEPSILON·Filed 1988·Granted Jan 17, 1989·87 cites·11 claims
- 2188US9917156B1Nucleation layer for growth of III-nitride structuresIQE PLC·Filed 2016·Granted Mar 13, 2018·9 cites·40 claims
- 2288US6949722B2Method and apparatus for active temperature control of susceptorsTOKYO ELECTRON LTD·Filed 2003·Granted Sep 27, 2005·33 cites·35 claims
- 2388US6511577B1Reduced impedance chamberTOKYO ELECTRON LTD·Filed 2000·Granted Jan 28, 2003·42 cites·18 claims
- 2487US7075031B2Method of and structure for controlling electrode temperatureTOKYO ELECTRON LTD·Filed 2001·Granted Jul 11, 2006·43 cites·28 claims
- 2587US6891124B2Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a waferTOKYO ELECTRON LTD·Filed 2001·Granted May 10, 2005·45 cites·20 claims
- 2687US6812646B2Method and device for attenuating harmonics in semiconductor plasma processing systemsTOKYO ELECTRON LTD·Filed 2002·Granted Nov 2, 2004·26 cites·22 claims
- 2787US6741944B1Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasmaTOKYO ELECTRON LTD·Filed 2000·Granted May 25, 2004·28 cites·10 claims
- 2887US4654509AMethod and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatusEPSILON LTD PARTNERSHIP·Filed 1985·Granted Mar 31, 1987·58 cites·4 claims
- 2985US6339206B1Apparatus and method for adjusting density distribution of a plasmaTOKYO ELECTRON LTD·Filed 1998·Granted Jan 15, 2002·42 cites·66 claims
- 3085US4874464AProcess for epitaxial deposition of siliconEPSILON LP·Filed 1988·Granted Oct 17, 1989·36 cites·21 claims
- 3184US7340472B2Organizing and storing hierarchical data in a database having dual structuresTOWN COMPASS LLC·Filed 2004·Granted Mar 4, 2008·49 cites·15 claims
- 3284US6573731B1Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillatorTOKYO ELECTRON LTD·Filed 2000·Granted Jun 3, 2003·22 cites·34 claims
- 3381US5455070AVariable rate distribution gas flow reaction chamberAPPLIED MATERIALS INC·Filed 1993·Granted Oct 3, 1995·41 cites·2 claims
- 3480US6913703B2Method of adjusting the thickness of an electrode in a plasma processing systemTOKYO ELECTRON LTD·Filed 2002·Granted Jul 5, 2005·14 cites·19 claims
- 3579US9076812B2HEMT structure with iron-doping-stop component and methods of formingIQE KC LLC·Filed 2013·Granted Jul 7, 2015·8 cites·34 claims
- 3679US7019253B2Electrically controlled plasma uniformity in a high density plasma sourceTOKYO ELECTRON LTD·Filed 2002·Granted Mar 28, 2006·37 cites·20 claims
- 3776US7462335B2Optical monitoring and control system and method for plasma reactorsTOKYO ELECTRON LTD·Filed 2002·Granted Dec 9, 2008·10 cites·5 claims
- 3873US6767698B2High speed stripping for damaged photoresistTOKYO ELECTRON LTD·Filed 2001·Granted Jul 27, 2004·15 cites·10 claims
- 3972US6690568B2Fluid dielectric variable capacitorTOKYO ELECTRON LTD·Filed 2002·Granted Feb 10, 2004·15 cites·11 claims
- 4071US6530342B1Large area plasma sourceTOKYO ELECTRON LTD·Filed 1999·Granted Mar 11, 2003·19 cites·17 claims
- 4170US7091503B2Measuring plasma uniformity in-situ at wafer levelTOKYO ELECTRON LTD·Filed 2001·Granted Aug 15, 2006·8 cites·27 claims
- 4270US6806650B2Structure and the method for measuring the spectral content of an electric field as a function of position inside a plasmaTOKYO ELECTRON LTD·Filed 2002·Granted Oct 19, 2004·15 cites·21 claims
- 4368US6861844B1Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasmaTOKYO ELECTRON LTD·Filed 2000·Granted Mar 1, 2005·22 cites·13 claims
- 4468US6729850B2Applied plasma duct systemTOKYO ELECTRON LTD·Filed 2002·Granted May 4, 2004·8 cites·30 claims
- 4567US7285758B2Rapid thermal processing lamp and method for manufacturing the sameTOKYO ELECTRON LTD·Filed 2001·Granted Oct 23, 2007·10 cites·28 claims
- 4667US7234862B2Apparatus for measuring temperatures of a wafer using specular reflection spectroscopyTOKYO ELECTRON LTD·Filed 2001·Granted Jun 26, 2007·15 cites·46 claims
- 4766US6811611B2Esrf source for ion plating epitaxial depositionTOKYO ELECTRON LTD·Filed 2001·Granted Nov 2, 2004·5 cites·11 claims
- 4866US6630364B2System for automatic control of the wall bombardment to control wall depositionTOKYO ELECTRON LTD·Filed 2000·Granted Oct 7, 2003·7 cites·12 claims
- 4965US9605238B2Photo-bioreactor system and method for production of bio-materialsARIZONA TECH INNOVATION GROUP INC·Filed 2014·Granted Mar 28, 2017·1 cites·17 claims
- 5062US6422825B2Plasma vacuum pumping cellTOKYO ELECTRON LTD·Filed 2000·Granted Jul 23, 2002·6 cites·18 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →