Inventor · disambiguated record
Ward Parkinson
Also filed as: PARKINSON WARD · PARKINSON WARD D
131 granted patents·10 pending applications·3,099 citations·filing 1978–2024
99Inventor score
Files withOVONYX INC37SANDISK TECHNOLOGIES LLC28MICRON TECHNOLOGY INC23PARKINSON WARD18PARKINSON WARD D8
Top patents by PatentIndex Score
141 records- 0199US7154774B2Detecting switching of access elements of phase change memory cellsOVONYX INC·Filed 2005·Granted Dec 26, 2006·137 cites·13 claims
- 0299US6545907B1Technique and apparatus for performing write operations to a phase change material memory deviceOVONYX INC·Filed 2001·Granted Apr 8, 2003·358 cites·40 claims
- 0399US5042011ASense amplifier pulldown device with tailored edge inputMICRON TECHNOLOGY INC·Filed 1989·Granted Aug 20, 1991·214 cites·6 claims
- 0498US7388775B2Detecting switching of access elements of phase change memory cellsOVONYX INC·Filed 2006·Granted Jun 17, 2008·98 cites·12 claims
- 0598US6795338B2Memory having access devices using phase change material such as chalcogenideINTEL CORP·Filed 2002·Granted Sep 21, 2004·223 cites·23 claims
- 0697US11488662B2Concurrent multi-bit access in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 1, 2022·5 cites·21 claims
- 0797US11398262B1Forced current access with voltage clamping in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 26, 2022·5 cites·20 claims
- 0897US7839674B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2008·Granted Nov 23, 2010·51 cites·23 claims
- 0997US7646630B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Jan 12, 2010·63 cites·23 claims
- 1096US11222678B1MRAM cross-point memory with reversed MRAM element vertical orientationSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 11, 2022·6 cites·20 claims
- 1196US7706178B2Programmable matrix array with phase-change materialOVONYX INC·Filed 2008·Granted Apr 27, 2010·53 cites·41 claims
- 1296US7499315B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Mar 3, 2009·47 cites·108 claims
- 1396US7280390B2Reading phase change memories without triggering reset cell threshold devicesOVONYX INC·Filed 2005·Granted Oct 9, 2007·43 cites·30 claims
- 1496US6768665B2Refreshing memory cells of a phase change material memory deviceINTEL CORP·Filed 2002·Granted Jul 27, 2004·104 cites·54 claims
- 1595US10545692B2Memory maintenance operations during refresh windowSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 28, 2020·13 cites·25 claims
- 1695US7466584B1Method and apparatus for driving an electronic loadOVONYX INC·Filed 2008·Granted Dec 16, 2008·47 cites·25 claims
- 1795US4441125AImage sensor using dynamic random access memoryMICRON TECHNOLOGY INC·Filed 1981·Granted Apr 3, 1984·79 cites·11 claims
- 1894US10311921B1Multiple-mode current sources for sense operationsSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 4, 2019·15 cites·20 claims
- 1994US7778064B2Accessing a phase change memoryOVONYX INC·Filed 2007·Granted Aug 17, 2010·30 cites·17 claims
- 2094US7391664B2Page mode access for non-volatile memory arraysOVONYX INC·Filed 2006·Granted Jun 24, 2008·29 cites·7 claims
- 2194US6813177B2Method and system to store informationOVOYNX INC·Filed 2002·Granted Nov 2, 2004·116 cites·33 claims
- 2293US11972787B2Cross-point array refresh schemeSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·2 cites·14 claims
- 2393US7864567B2Programming a normally single phase chalcogenide material for use as a memory of FPLAOVONYX INC·Filed 2008·Granted Jan 4, 2011·25 cites·29 claims
- 2493US7495944B2Reading phase change memoriesOVONYX INC·Filed 2005·Granted Feb 24, 2009·23 cites·16 claims
- 2592US10373682B2Write set operation for memory device with bit line capacitor driveSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 6, 2019·15 cites·14 claims
- 2692US8194433B2Method and apparatus for accessing a bidirectional memoryPARKINSON WARD·Filed 2008·Granted Jun 5, 2012·31 cites·18 claims
- 2792US7590918B2Using a phase change memory as a high volume memoryOVONYX INC·Filed 2004·Granted Sep 15, 2009·67 cites·14 claims
- 2891US5907512AMask write enablement for memory devices which permits selective masked enablement of plural segmentsMICRON TECHNOLOGY INC·Filed 1993·Granted May 25, 1999·89 cites·15 claims
- 2991US5266821AChip decoupling capacitorMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 30, 1993·99 cites·25 claims
- 3090US11972822B2Programmable ECC for MRAM mixed-read schemeSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·2 cites·19 claims
- 3190US10885991B2Data rewrite during refresh windowSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 5, 2021·6 cites·18 claims
- 3290US10192616B2Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selectsHGST Netherlands BV·Filed 2016·Granted Jan 29, 2019·7 cites·22 claims
- 3390US7414883B2Programming a normally single phase chalcogenide material for use as a memory or FPLAINTEL CORP·Filed 2006·Granted Aug 19, 2008·19 cites·32 claims
- 3488US7365355B2Programmable matrix array with phase-change materialOVONYX INC·Filed 2004·Granted Apr 29, 2008·40 cites·16 claims
- 3588US5032530ASplit-polysilicon CMOS process incorporating unmasked punchthrough and source/drain implantsMICRON TECHNOLOGY INC·Filed 1989·Granted Jul 16, 1991·57 cites·3 claims
- 3687US11386945B2Signal amplification in MRAM during reading, including a pair of complementary transistors connected to an array lineSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 3787US7453715B2Reading a phase change memoryOVONYX INC·Filed 2005·Granted Nov 18, 2008·13 cites·8 claims
- 3886US11978491B2Mixed current-forced read scheme for MRAM array with selectorSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 7, 2024·1 cites·18 claims
- 3986US8036013B2Using higher current to read a triggered phase change memoryOVONYX INC·Filed 2005·Granted Oct 11, 2011·16 cites·26 claims
- 4086US6990017B1Accessing phase change memoriesINTEL CORP·Filed 2004·Granted Jan 24, 2006·37 cites·26 claims
- 4186US5307309AMemory module having on-chip surge capacitorsMICRON TECHNOLOGY INC·Filed 1993·Granted Apr 26, 1994·76 cites·19 claims
- 4285US10497438B2Cross-point memory array addressingSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 3, 2019·7 cites·18 claims
- 4385US9349447B1Controlling coupling in large cross-point memory arraysHGST INC·Filed 2015·Granted May 24, 2016·8 cites·15 claims
- 4483US8259525B2Using a bit specific reference level to read a memoryLOWREY TYLER·Filed 2012·Granted Sep 4, 2012·6 cites·14 claims
- 4583US7849712B2Reading a phase change memoryOVONYX INC·Filed 2008·Granted Dec 14, 2010·9 cites·10 claims
- 4683US4914631APull up circuit for sense lines in a semiconductor memoryMICRON TECHNOLOGY INC·Filed 1988·Granted Apr 3, 1990·45 cites·17 claims
- 4782US8441836B2Sector array addressing for ECC managementPARKINSON WARD·Filed 2010·Granted May 14, 2013·7 cites·46 claims
- 4882US5173905AParity and error correction coding on integrated circuit addressesMICRON TECHNOLOGY INC·Filed 1990·Granted Dec 22, 1992·109 cites·23 claims
- 4981US8223580B2Method and apparatus for decoding memoryPARKINSON WARD·Filed 2008·Granted Jul 17, 2012·8 cites·25 claims
- 5081US7957207B2Programmable resistance memory with interface circuitry for providing read information to external circuitry for processingOVONYX INC·Filed 2009·Granted Jun 7, 2011·12 cites·23 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →