Inventor · disambiguated record
Werner Knaepen
Also filed as: KNAEPEN WERNER
34 granted patents·11 pending applications·1,548 citations·filing 2013–2025
96Inventor score
Top patents by PatentIndex Score
45 records- 0198US9916980B1Method of forming a structure on a substrateASM IP HOLDING BV·Filed 2016·Granted Mar 13, 2018·480 cites·23 claims
- 0298US9887082B1Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2016·Granted Feb 6, 2018·466 cites·26 claims
- 0397US10204782B2Combined anneal and selective deposition processASM IP HOLDING BV·Filed 2016·Granted Feb 12, 2019·52 cites·24 claims
- 0497US9812320B1Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2016·Granted Nov 7, 2017·475 cites·38 claims
- 0596US9552979B2Cyclic aluminum nitride deposition in a batch reactorASM IP HOLDING BV·Filed 2013·Granted Jan 24, 2017·43 cites·25 claims
- 0691US9576790B2Deposition of boron and carbon containing materialsASM IP HOLDING BV·Filed 2015·Granted Feb 21, 2017·7 cites·26 claims
- 0789US11088002B2Substrate rack and a substrate processing system and methodASM IP HOLDING BV·Filed 2018·Granted Aug 10, 2021·7 cites·23 claims
- 0888US11898243B2Method of forming vanadium nitride-containing layerASM IP HOLDING BV·Filed 2020·Granted Feb 13, 2024·2 cites·14 claims
- 0988US11447861B2Sequential infiltration synthesis apparatus and a method of forming a patterned structureASM IP HOLDING BV·Filed 2016·Granted Sep 20, 2022·4 cites·13 claims
- 1084US11990333B2Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2023·Granted May 21, 2024·0 cites·20 claims
- 1183US11581186B2Sequential infiltration synthesis apparatusASM IP HOLDING BV·Filed 2016·Granted Feb 14, 2023·3 cites·25 claims
- 1282US11230766B2Substrate processing apparatus and methodASM IP HOLDING BV·Filed 2018·Granted Jan 25, 2022·3 cites·13 claims
- 1381US11629407B2Substrate processing apparatus and method for processing substratesASM IP HOLDING BV·Filed 2020·Granted Apr 18, 2023·1 cites·27 claims
- 1477US12448683B2Method of forming a vanadium nitride-containing layerASM IP HOLDING BV·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
- 1577US11694892B2Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 1677US10741385B2Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2017·Granted Aug 11, 2020·1 cites·27 claims
- 1776US12000042B2Sequential infiltration synthesis apparatus and a method of forming a patterned structureASM IP HOLDING BV·Filed 2022·Granted Jun 4, 2024·0 cites·16 claims
- 1876US9837281B2Cyclic doped aluminum nitride depositionASM IP HOLDING BV·Filed 2016·Granted Dec 5, 2017·2 cites·12 claims
- 1975US10741394B2Combined anneal and selective deposition processASM IP HOLDING BV·Filed 2019·Granted Aug 11, 2020·1 cites·20 claims
- 2074US2024384411A1Substrate processing apparatus with an injectorASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2173US12410522B2Substrate processing apparatus and method for processing substratesASM IP HOLDING BV·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 2272US11970766B2Sequential infiltration synthesis apparatusASM IP HOLDING BV·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
- 2372US11107676B2Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 2470US10199223B2Semiconductor device fabrication using etch stop layerASM IP HOLDING BV·Filed 2017·Granted Feb 5, 2019·1 cites·18 claims
- 2569US11851755B2Sequential infiltration synthesis apparatus and a method of forming a patterned structureASM IP HOLDING BV·Filed 2020·Granted Dec 26, 2023·0 cites·20 claims
- 2667US11646204B2Method for forming a layer provided with siliconASM IP HOLDING BV·Filed 2021·Granted May 9, 2023·0 cites·20 claims
- 2767US2023230833A1Method for forming a layer provided with siliconASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2865US12351902B2Methods and systems for delivery of vanadium compoundsASM IP HOLDING BV·Filed 2021·Granted Jul 8, 2025·0 cites·16 claims
- 2964US12195852B2Substrate processing apparatus with an injectorASM IP HOLDING BV·Filed 2021·Granted Jan 14, 2025·0 cites·13 claims
- 3063US2024425984A1Method of forming a layer by aldASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3159US2023002889A1Chemical vapor depospition furnace for depositing filmsASM IP HOLDING BV·Filed 2022·Application pending·0 cites
- 3258US11610775B2Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2017·Granted Mar 21, 2023·0 cites·38 claims
- 3357US2021371978A1System and methods for direct liquid injection of vanadium precursorsASM IP HOLDING BV·Filed 2021·Application pending·0 cites
- 3457US2025389025A1Method of forming a layer by aldASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 3555US2023360905A1Method of forming a silicon comprising layerASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3654US2024068097A1Substrate processing apparatusASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3751US9799509B2Cyclic aluminum oxynitride depositionASM IP HOLDING BV·Filed 2014·Granted Oct 24, 2017·0 cites·21 claims
- 3848US11056353B2Method and structure for wet etch utilizing etch protection layer comprising boron and carbonASM IP HOLDING BV·Filed 2018·Granted Jul 6, 2021·0 cites·17 claims
- 3946US10551741B2Method of forming a directed self-assembled layer on a substrateASM IP HOLDING BV·Filed 2017·Granted Feb 4, 2020·0 cites·24 claims
- 4043US10824078B2Lithographic mask layerIMEC VZW·Filed 2017·Granted Nov 3, 2020·0 cites·15 claims
- 4141US10453685B2Forming semiconductor device by providing an amorphous silicon core with a hard mask layerASM IP HOLDING BV·Filed 2017·Granted Oct 22, 2019·0 cites·21 claims
- 4239US2020013629A1Semiconductor processing apparatusASM IP HOLDING BV·Filed 2017·Application pending·0 cites
- 4335US2017298503A1Combined anneal and selective deposition systemsASM IP HOLDING BV·Filed 2016·Application pending·0 cites
- 4433US11830730B2Layer forming method and apparatusASM IP HOLDING BV·Filed 2017·Granted Nov 28, 2023·0 cites·18 claims
- 4533US2016240373A1Method for forming oxide layer by oxidizing semiconductor substrate with hydrogen peroxideASM IP HOLDING BV·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →